Material properties of Ga0.47In0.53As grown on InP by low-temperature molecular beam epitaxy von Künzel, H., Böttcher, J., Gibis, R., Urmann, G.

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In   situ native oxide removal from AlGaInAs surfaces by hydrogen radical treatment for molecular beam epitaxy regrowth von Hase, A., Gibis, R., Künzel, H., Griebenow, U.

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MOMBE: superior epitaxial growth for InP-based monolithically integrated photonic circuits von Gibis, R, Kizuki, H, Albrecht, P, Harde, P, Urmann, G, Kaiser, R, Künzel, H

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Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMS von Harde, P, Gibis, R, Kaiser, R, Kizuki, H, Künzel, H

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MOMBE selective infill growth of InP/GaInAs for quantum dot formation von Gibis, R, Schelhase, S, Steingrüber, R, Urmann, G, Künzel, H, Thiel, S, Stier, O, Bimberg, D

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Selective MOMBE growth of InP-based waveguide/laser butt-joints von Künzel, H, Ebert, S, Gibis, R, Kaiser, R, Kizuki, H, Malchow, S, Urmann, G

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MOMBE selective infill growth of InP:Si and InGaAs:Si and large area MOMBE regrowth von Schelhase, S., Böttcher, J., Gibis, R., Künzel, H., Paraskevopoulos, A.

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MOMBE growth of high quality GaInAsP ( λg = 1.05 μm) for waveguide applications von Künzel, H., Albrecht, P., Gibis, R., Hamacher, M., Schelhase, S.

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MOMBE grown GaInAsP ( λg=1.05/1.15 μm) waveguide for laser integrated photonic ICs von Künzel, H, Gibis, R, Kizuki, H, Albrecht, P, Ebert, S, Harde, P, Malchow, S, Kaiser, R

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Devolving Healthcare Delivery to Regional Health Authorities: Is Health Technology Assessment Prepared to Follow? von Gibis, Bernhard R., Juzwishin, Don

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Status of InP-based metal organic MBE with reference to conventional MBE and MOVPE von Kunzel, H., Gibis, R., Kaiser, R., Malchow, S., Schelhase, S.

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Low-temperature MBE of AlGaInAs lattice-matched to InP von Künzel, H., Böttcher, J., Gibis, R., Hoenow, H., Heedt, C.

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Laser/waveguide integration utilizing selective area MOMBE regrowth for photonic IC applications von Kunzel, H., Ebert, S., Gibis, R., Harde, P., Kaiser, R., Kizuki, H., Malchow, S.

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Incorporation behaviour of manganese in MBE grown Ga0.47In0.53As von K nzel, H., Bochnia, R., Gibis, R., Harde, P., Passenberg, W.

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Monolithically integrated transceivers on InP: the development of a generic integration concept and its technological challenges von Kaiser, R., Hamacher, M., Heidrich, H., Albrecht, P., Ebert, W., Gibis, R., Kunzel, H., Loffler, R., Malchow, S., Mohrle, M., Rehbein, W., Schroeter-Janssen, H.

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MBE overgrowth of implanted regions in InP : Fe substrates von Künzel, H., Gibis, R., Schlaak, W., Su, L.M., Grote, N.

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Metalorganic molecular beam epitaxial growth of semi-insulating GaInAsP(λg=1.05 μm):Fe optical waveguides for integrated photonic devices von Künzel, H., Albrecht, P., Ebert, S., Gibis, R., Harde, P., Kaiser, R., Kizuki, H., Malchow, S.

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Fabrication and characteristics of a MBE-grown InAlAs/InGaAs heterojunction bipolar transistor using an embedded collector von Su, L.M., Kunzel, H., Gibis, R., Mekonnen, G., Schlaak, W., Grote, N.

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Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMS von HARDE, P, GIBIS, R, KAISER, R, KIZUKI, H, KÜNZEL, H

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Material properties of Ga0.47In0.53 as grown on InP by low-temperature molecular beam epitaxy von KÜNZEL, H, BÖTTCHER, J, GIBIS, R, URMANN, G

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