Ultrathin Ni Silicides With Low Contact Resistance on Strained and Unstrained Silicon von Knoll, L., Zhao, Q.T., Habicht, S., Urban, C., Ghyselen, B., Mantl, S.

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Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts von Habicht, S, Zhao, Q T, Feste, S F, Knoll, L, Trellenkamp, S, Ghyselen, B, Mantl, S

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Two-dimensional photonic crystals with pure germanium-on-insulator von El Kurdi, M., David, S., Checoury, X., Fishman, G., Boucaud, P., Kermarrec, O., Bensahel, D., Ghyselen, B.

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Realization and characterization of thin single crystal Ge films on sapphire von Bogumilowicz, Y, Abbadie, A, Klinger, V, Benaissa, L, Gergaud, P, Rouchon, D, Maurois, C, Lecouvey, C, Blanc, N, Charles-Alfred, C, Drouin, A, Ghyselen, B, Wekkeli, A, Dimroth, F, Carron, V

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The generic nature of the Smart-Cut® process for thin film transfer von ASPAR, B, MORICEAU, H, LETERTRE, F, RAYSSAC, O, BARGE, T, MALEVILLE, C, GHYSELEN, B, JALAGUIER, E, LAGAHE, C, SOUBIE, A, BIASSE, B, PAPON, A. M, CLAVERIE, A, GRISOLIA, J, BENASSAYAG, G

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Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body von Ohata, A., Bae, Y., Cristoloveanu, S., Signamarcheix, T., Widiez, J., Ghyselen, B., Faynot, O., Clavelier, L.

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Resonant cavity enhanced Ge photodetectors for 1550 nm operation on reflecting Si substrates von Dosunmu, O.I., Cannon, D.D., Emsley, M.K., Ghyselen, B., Jifeng Liu, Kimerling, L.C., Unlu, M.S.

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Improved GeOI substrates for pMOSFET off-state leakage control von Romanjek, K., Augendre, E., Van Den Daele, W., Grandchamp, B., Sanchez, L., Le Royer, C., Hartmann, J.-M., Ghyselen, B., Guiot, E., Bourdelle, K., Cristoloveanu, S., Boulanger, F., Clavelier, L.

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Germanium-based nanophotonic devices: Two-dimensional photonic crystals and cavities von Boucaud, P., El Kurdi, M., David, S., Checoury, X., Li, X., Ngo, T.-P., Sauvage, S., Bouchier, D., Fishman, G., Kermarrec, O., Campidelli, Y., Bensahel, D., Akatsu, T., Richtarch, C., Ghyselen, B.

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Performance of (1 1 0) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes von Ohata, A., Bae, Y., Signamarcheix, T., Widiez, J., Ghyselen, B., Faynot, O., Clavelier, L., Cristoloveanu, S.

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Fully depleted silicon on insulator MOSFETs on (1 1 0) surface for hybrid orientation technologies von Signamarcheix, T., Andrieu, F., Biasse, B., Cassé, M., Papon, A.-M., Nolot, E., Ghyselen, B., Faynot, O., Clavelier, L.

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Stress Hybridization for Multigate Devices Fabricated on Supercritical Strained-SOI (SC-SSOI) von Collaert, N., Rooyackers, R., De Keersgieter, A., Leys, F.E., Cayrefourcq, I., Ghyselen, B., Loo, R., Jurczak, M.

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Ultra-thin strained SOI substrate analysis by pseudo-MOS measurements von Gallon, C., Fenouillet-Beranger, C., Bresson, N., Cristoloveanu, S., Allibert, F., Bord, S., Aulnette, C., Delille, D., Latu-Romain, E., Hartmann, J.M., Ernst, T., Andrieu, F., Campidelli, Y., Ghyselen, B., Cayrefourcq, I., Fournel, F., Kernevez, N., Skotnicki, T.

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Piezoresponse Force Microscopy study of a single-crystal LiTaO3 thin film obtained by the Smart Cut™ technology von Brugere, A, Moulet, J S, Gidon, S, Tchelnokov, A, Deguet, C, Clavelier, L, Ghyselen, B, Gautier, B

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Papers from the 3rd International SiGe Technology and Device Meeting (Princeton, New Jersey, USA, 15–17 May 2006) (ISTDM 2006) von Sturm, J, Fitzgerald, E, Koester, S, Kolodzey, J, Murota, J, Paul, D, Tillack, B, Zaima, S, Ghyselen, B, Takagi, S

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Performance and physics of sub-50 nm strained Si on Si1-xGex-on-insulator (SGOI) nMOSFETs von ANDRIEU, F, ERNST, T, FOURNEL, F, GHIBAUDO, G, DELEONIBUS, S, FAYNOT, O, ROZEAU, O, BOGUMILOWICZ, Y, HARTMANN, J.-M, BREVARD, L, TOFFOLI, A, LAFOND, D, GHYSELEN, B

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Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings von Lanzerath, F., Buca, D., Trinkaus, H., Goryll, M., Mantl, S., Knoch, J., Breuer, U., Skorupa, W., Ghyselen, B.

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New layer transfers obtained by the SmartCut process von MORICEAU, H, FOURNEL, F, SOUBIE, A, BIASSE, B, SOUSBIE, N, SARTORI, S, MICHAUD, J. F, LETERTRE, F, RAYSSAC, O, CAYREFOURCQ, I, RICHTARCH, C, DAVAL, N, ASPAR, B, AULNETTE, C, AKATSU, T, OSTERNAUD, B, GHYSELEN, B, MAZURE, C, BATAILLOU, B, BEAUMONT, A, MORALES, C, CARTIER, A. M, POCAS, S, LAGAHE, C, JALAGUIER, E

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Direct Bonding of Silicon to Platinum von Dargent, L., Bogumilowicz, Y., Renault, O., Ghyselen, B., Madar, R., Clavelier, L.

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Strain engineering in SOI-type materials for future technologies von Ghyselen, Bruno

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