Multi-Gate FinFET Mixer Variability Assessment Through Physics-Based Simulation von Bughio, A. M., Guerrieri, S. Donati, Bonani, F., Ghione, G.

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Ag nanoparticle-based inkjet printed planar transmission lines for RF and microwave applications: Considerations on ink composition, nanoparticle size distribution and sintering ti... von Chiolerio, A., Cotto, M., Pandolfi, P., Martino, P., Camarchia, V., Pirola, M., Ghione, G.

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Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries von Farahmand, M., Garetto, C., Bellotti, E., Brennan, K.F., Goano, M., Ghillino, E., Ghione, G., Albrecht, J.D., Ruden, P.P.

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Investigating the properties of interfacial layers in planar Schottky contacts on hydrogen-terminated diamond through direct current/small-signal characterization and radial line s... von Cappelluti, F., Ghione, G., Russell, S. A. O., Moran, D. A. J., Verona, C., Limiti, E.

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Synthesis, characterization and selective oxidation properties of Ti-containing mesoporous catalysts von Eimer, Griselda A., Casuscelli, Sandra G., Ghione, Guillermo E., Crivello, Mónica E., Herrero, Eduardo R.

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Experimental investigation of bias current and load modulation effects in phase distortion of GaN HEMTs von Quaglia, R, Piazzon, L, Camarchia, V, Giofrè, R, Pirola, M, Colantonio, P, Ghione, G, Giannini, F

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RF power performance evaluation of surface channel diamond MESFETs von Camarchia, V., Cappelluti, F., Ghione, G., Rossi, M.C., Calvani, P., Conte, G., Pasciuto, B., Limiti, E., Dominijanni, D., Giovine, E.

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Self-Consistent Electrothermal Modeling of Class A, AB, and B Power GaN HEMTs Under Modulated RF Excitation von Camarchia, V., Cappelluti, F., Pirola, M., Guerrieri, S.D., Ghione, G.

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“Clean” limonene epoxidation using Ti-MCM-41 catalyst von Cagnoli, M.V., Casuscelli, S.G., Alvarez, A.M., Bengoa, J.F., Gallegos, N.G., Samaniego, N.M., Crivello, M.E., Ghione, G.E., Pérez, C.F., Herrero, E.R., Marchetti, S.G.

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Cyclostationary noise modeling of radio frequency devices von Bonani, F., Guerrieri, S. Donati, Ghione, G.

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Novel Concepts for High-Efficiency Lightweight Space Solar Cells von Cappelluti, F., Ghione, G., Gioannini, M., Bauhuis, G., Mulder, P., Schermer, J., Cimino, M., Gervasio, G., Bissels, G., Katsia, E., Aho, T., Niemi, T., Guina, M., Kim, D., Wu, J., Liu, H.

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Physics-Based PiN Diode SPICE Model for Power-Circuit Simulation von Buiatti, G.M., Cappelluti, F., Ghione, G.

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Immittance and -Parameter-Based Criteria for the Unconditional Stability of Linear Two-Ports: Relations and Invariance Properties von Pirola, M., Ghione, G.

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Accurate large-signal equivalent circuit of surface channel diamond FETs based on the Chalmers model von Camarchia, V., Cappelluti, F., Ghione, G., Pirola, M., Conte, G., Pasciuto, B., Limiti, E., Giovine, E.

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3-3.6-GHz Wideband GaN Doherty Power Amplifier Exploiting Output Compensation Stages von Rubio, Jorge Moreno, Jie Fang, Camarchia, Vittorio, Quaglia, R., Pirola, M., Ghione, G.

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A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation von Bonani, F., Guerrieri, S.D., Ghione, G., Pirola, M.

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Revisiting the partial-capacitance approach to the analysis of coplanar transmission lines on multilayered substrates von Ghione, G., Goano, M.

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Assessment of Thermal Instabilities and Oscillations in Multifinger Heterojunction Bipolar Transistors Through a Harmonic-Balance-Based CAD-Oriented Dynamic Stability Analysis Tech... von Traversa, F.L., Cappelluti, F., Bonani, F., Ghione, G.

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Novel TCAD-Oriented Definition of the off-State Breakdown Voltage in Schottky-Gate FETs: A 4H-SiC MESFET Case Study von Furno, M., Bonani, F., Ghione, G.

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Transfer matrix method modelling of inhomogeneous Schottky barrier diodes on silicon carbide von Furno, M., Bonani, F., Ghione, G.

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