Impact of superlinear defect-related recombination on LED performance at low injection von Gfroerer, T. H., Chen, Ruiming, Watt, Grace, Liu, Zhiqiang, Zhang, Yong

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External radiative quantum efficiency of 96% from a GaAs/GaInP heterostructure von GAUCK, H, GFROERER, T. H, RENN, M. J, CORNELL, E. A, BERTNESS, K. A

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An extended defect as a sensor for free carrier diffusion in a semiconductor von Gfroerer, T. H., Zhang, Yong, Wanlass, M. W.

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Excitation-dependent recombination and diffusion near an isolated dislocation in GaAs von Gfroerer, T. H., Crowley, C. M., Read, C. M., Wanlass, M. W.

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Temperature dependence of nonradiative recombination in low-band gap InxGa1−xAs/InAsyP1−y double heterostructures grown on InP substrates von Gfroerer, T. H., Priestley, L. P., Fairley, M. F., Wanlass, M. W.

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Deep donor-acceptor pair recombination in InGaAs-based heterostructures grown on InP substrates von Gfroerer, T. H., Gillespie, C. E., Campbell, J. P., Wanlass, M. W.

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Defect states with an occupation-dependent lattice configuration in zinc-doped Ga0.58In0.42P on GaAs von Gfroerer, T H, Hampton, D G, Wanlass, M W

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Defect-related density of states in low-band gap InxGa1−xAs/InAsyP1−y double heterostructures grown on InP substrates von Gfroerer, T. H., Priestley, L. P., Weindruch, F. E., Wanlass, M. W.

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Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector von Gfroerer, T. H., Cornell, E. A., Wanlass, M. W.

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Slow relaxation of excited states in strain-induced quantum dots von Gfroerer, TH, Sturge, MD, Kash, K, Yater, JA, Plaut, AS, Lin, PS, Florez, LT, Harbison, JP, Das, SR, Lebrun, L

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AX-type defects in zinc-doped GaAs ( 1 − x ) P ( x ) on GaAs von Gfroerer, T. H., Hampton, D. G., Simov, P. R., Wanlass, M. W.

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A comparison of photoluminescence imaging and confocal photoluminescence microscopy in the study of diffusion near isolated extended defects in GaAs von Gfroerer, T. H., Yong Zhang, Wanlass, M. W.

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Band-to-band and sub-band gap cathodoluminescence from GaAsP/GaInP epistructures grown on GaAs substrates von Gfroerer, T.H., Romero, M.J., Al-Jassim, M.M., Wanlass, M.W.

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Band-to-band and sub-band gap cathodoluminescence from GaAsP/GaInP epistructures grown on GaAs substrates von GFROERER, T. H, ROMERO, M. J, AL-JASSIM, M. M, WANLASS, M. W

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Further comments on 'Modes of elliptical waveguides: a correction' (and reply) von Wiltse, J.C., Gfroerer, T.H., Goldberg, D.A., Laslett, L.J., Rimmer, R.A.

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MODES OF ELLIPTIC WAVE-GUIDES - A CORRECTION von WILTSE, JC, GFROERER, TH

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An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures von Zhang, Fan, Castaneda, Jose F., Gfroerer, Timothy H., Friedman, Daniel, Zhang, Yong-Hang, Wanlass, Mark W., Zhang, Yong

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Pregnancy-related substance use in the United States during 1996–1998 von Ebrahim, Shahul H, Gfroerer, Joseph

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Impact of Individual Structural Defects in GaAs Solar Cells: A Correlative and In Operando Investigation of Signatures, Structures, and Effects von Chen, Qiong, McKeon, Brandon S., Zhang, Sunny Y., Zhang, Fan, Hu, Changkui, Gfroerer, Timothy H., Wanlass, Mark W., Smith, David J., Zhang, Yong

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Pregnancy-Related Substance Use in the United States During 1996–1998 von Ebrahim, Shahul H., Gfroerer, Joseph

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