Omnidirectional reflective contacts for light-emitting diodes von Gessmann, T., Schubert, E.F., Graff, J.W., Streubel, K., Karnutsch, C.

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Ohmic contacts to p -type GaN mediated by polarization fields in thin InxGa1−xN capping layers von Gessmann, T., Li, Y.-L., Waldron, E. L., Graff, J. W., Schubert, E. F., Sheu, J. K.

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High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications von Gessmann, Th, Schubert, E. F.

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Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes von Chhajed, S., Xi, Y., Li, Y.-L., Gessmann, Th, Schubert, E. F.

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Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes von Shah, Jay M., Li, Y.-L., Gessmann, Th, Schubert, E. F.

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Positron annihilation spectroscopy study of interfacial defects formed by anodic oxidation of aluminum von HEBERT, K. R, GESSMANN, T, LYNN, K. G, ASOKA-KUMAR, P

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The impact of carbon dioxide and helium insufflation on experimental liver metastases, macrophages, and cell adhesion molecules von GUTT, C. N, GESSMANN, T, SCHEMMER, P, MEHRABI, A, SCHMANDRA, Th, KIM, Z.-G

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Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods von Xi, Y., Xi, J.-Q., Gessmann, Th, Shah, J. M., Kim, J. K., Schubert, E. F., Fischer, A. J., Crawford, M. H., Bogart, K. H. A., Allerman, A. A.

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GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer von Kim, Jong Kyu, Gessmann, Thomas, Schubert, E. Fred, Xi, J.-Q., Luo, Hong, Cho, Jaehee, Sone, Cheolsoo, Park, Yongjo

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GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector von Kim, Jong Kyu, Gessmann, Thomas, Luo, Hong, Schubert, E. Fred

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Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1−xN capping layers von Gessmann, Th, Li, Y. -L., Waldron, E. L., Graff, J. W., Schubert, E. F., Sheu, J. K.

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Hepatic tumor spread of colorectal cancer in a laparoscopic animal model von GUTT, C. N, KIM, Z. G, GESSMANN, T, LORENZ, M, PAOLUCCI, V

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Omnidirectional reflector using nanoporous SiO2 as a low-refractive-index material von XI, J.-Q, OJHA, Manas, CHO, Woojin, PLAWSKY, J. L, GILL, W. N, GESSMANN, Th, SCHUBERT, E. F

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Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths von Li, Y.-L., Gessmann, Th, Schubert, E. F., Sheu, J. K.

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Junction Temperature in Ultraviolet Light-Emitting Diodes von Xi, Yangang, Gessmann, Thomas, Xi, Jingqun, Kim, Jong Kyu, Shah, Jay M., Schubert, E. Fred, Fischer, Arthur J., Crawford, Mary H., Bogart, Katherine H. A., Allerman, Andrew A.

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Light Extraction in GaInN Light-Emitting Diodes using Diffuse Omnidirectional Reflectors von Kim, Jong Kyu, Luo, Hong, Xi, Yangang, Shah, Jay M., Gessmann, Thomas, Schubert, E. Fred

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P-type conductivity in bulk AlxGa1−xN and AlxGa1−xN/AlyGa1−yN superlattices with average Al mole fraction >20 von Kim, J. K., Waldron, E. L., Li, Y.-L., Gessmann, Th, Schubert, E. F., Jang, H. W., Lee, J.-L.

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Ohmic contact technology in III nitrides using polarization effects of cap layers von Gessmann, Th, Graff, J. W., Li, Y.-L., Waldron, E. L., Schubert, E. F.

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Size Distribution of Structural Free Volumes in Nanocrystalline Metals von Schaefer, Hans Eckhardt, Würschum, R., Hof, P., Straub, W., Gessmann, Th

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Positron annihilation spectroscopy study of interfacial defects formed by dissolution of aluminum in aqueous sodium hydroxide von HEBERT, Kurt R, HUIQUAN WU, GESSMANN, Thomas, LYNN, Kelvin

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