Fabrication of p-n junctions in ZnO by arsenic ion implantation followed by annealing in atomic oxygen von Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B.

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Radical-recombination luminescence, ion-luminescence and photoluminescence of CaGa2S4:Eu von Georgobiani, A.N., Styrov, V.V., Tyutyunnikov, V.I., Tagiev, B.G., Tagiev, O.B., Djabbarov, R.B.

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Effect of surface morphology on manganese ion luminescence kinetics in ZnS:Mn2+ films von Georgobiani, A. N., Gruzintsev, A. N.

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Radical-beam gettering epitaxy of GaN layers on nitrogen-ion-implanted GaAs substrates von Georgobiani, A. N., Rogozin, I. V., Kotlyarevsky, M. B.

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Energy transfer in Ce and Eu co-doped barium thiogallate: A photoluminescence characterization von Marceddu, M., Anedda, A., Corpino, R., Georgobiani, A.N., Ricci, P.C.

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Methods of High-Energy Chemistry in the Technology of Wide-Gap Chalcogenide Semiconductors von Georgobiani, A. N., Kotlyarevsky, M. B., Rogozin, I. V.

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Effect of Pr3+ on the stokes luminescence of YPO4:Nd3+ under IR excitation von Manashirov, O. Ya, Georgobiani, A. N., Gutan, V. B., Zvereva, E. M., Lobanov, A. N.

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Radiative recombination in CdGa2S4 single crystals von Georgobiani, A. N., Kerimova, T. G., Guliev, R. A.

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Properties of CdSe single crystals activated with selenium by ion implantation von Georgobiani, A. N., Levonovich, B. N.

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Luminescence and Optical-Memory model of SrAl2O4:Eu2+,Dy3+ and Sr4Al14O25:Eu2+,Dy3 von Georgobiani, A. N., Gutan, V. B., Demin, V. I., Semendyaev, S. V.

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Structure and electrical conductivity of selenium-ion-implanted CdSe films von Georgobiani, A. N., Levonovich, B. N., Avetisov, I. Kh

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Structural and electroluminescent properties of n-ZnO/p-GaN:Mg heterojunctions von Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Datskevich, N. P.

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Radical-Beam Gettering Epitaxy of ZnO Films under UV Irradiation von Georgobiani, A. N., Kotlyarevsky, M. B., Rogozin, I. V., Marakhovskii, A. V.

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Properties of epitaxial ZnO:P films von Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Demin, V. I.

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Luminescence of BaSiO3 crystals doped with Er3+ and Yb3 von Georgobiani, A. N., Barthou, C., Benalloul, P., Bakhtiyarly, I. B., Tagiev, K. O.

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Structure and photoluminescence of ZnGa2Se4:Eu2 von Georgobiani, A. N., Tagiev, B. G., Guseinov, G. G., Kerimova, T. G., Tagiev, O. B., Asadullaeva, S. G.

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Activation of p-type conduction in ZnO:N films by annealing in atomic oxygen von Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Demin, V. I., Lepnev, L. S.

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A new “invisible” IR phosphor based on yttrium and ytterbium phosphates von Manashirov, O. Ya, Georgobiani, A. N., Gutan, V. B., Semendyaev, S. V.

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Luminescence in various classes of Er3+-doped inorganic compounds under IR excitation von Manashirov, O. Ya, Georgobiani, A. N., Gutan, V. B., Semendyaev, S. V.

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p-Type ZnO:N obtained by ion implantation of nitrogen with post-implantation annealing in oxygen radicals von Georgobiani, A.N., Gruzintsev, A.N., Volkov, V.T., Vorobiev, M.O., Demin, V.I., Dravin, V.A.

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