Room-temperature nonlinear Hall effect and wireless radiofrequency rectification in Weyl semimetal TaIrTe4 von Kumar, Dushyant, Hsu, Chuang-Han, Sharma, Raghav, Chang, Tay-Rong, Yu, Peng, Wang, Junyong, Eda, Goki, Liang, Gengchiau, Yang, Hyunsoo

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High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection von Lukman, Steven, Ding, Lu, Xu, Lei, Tao, Ye, Riis-Jensen, Anders C., Zhang, Gang, Wu, Qing Yang Steve, Yang, Ming, Luo, Sheng, Hsu, Chuanghan, Yao, Liangzi, Liang, Gengchiau, Lin, Hsin, Zhang, Yong-Wei, Thygesen, Kristian S., Wang, Qi Jie, Feng, Yuanping, Teng, Jinghua

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Thermoelectric performance of MX2 (M = Mo,W; X = S,Se) monolayers von Huang, Wen, Da, Haixia, Liang, Gengchiau

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All-electric magnetization switching and Dzyaloshinskii–Moriya interaction in WTe2/ferromagnet heterostructures von Shi, Shuyuan, Liang, Shiheng, Zhu, Zhifeng, Cai, Kaiming, Pollard, Shawn D., Wang, Yi, Wang, Junyong, Wang, Qisheng, He, Pan, Yu, Jiawei, Eda, Goki, Liang, Gengchiau, Yang, Hyunsoo

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Damping-like spin-orbit-torque-induced magnetization dynamics in ferrimagnets based on Landau-Lifshitz-Bloch equation von Zhu, Zhifeng, Fong, Xuanyao, Liang, Gengchiau

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Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors von Liang, Gengchiau, Neophytou, Neophytos, Nikonov, Dmitri E., Lundstrom, Mark S.

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Theoretical study of thermoelectric properties of few-layer MoS2 and WSe2 von Huang, Wen, Luo, Xin, Gan, Chee Kwan, Quek, Su Ying, Liang, Gengchiau

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Direct design of ground-state probabilistic logic using many-body interactions for probabilistic computing von He, Yihan, Luo, Sheng, Fang, Chao, Liang, Gengchiau

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Influence of Size and Shape on the Performance of VCMA-Based MTJs von Miriyala, Venkata Pavan Kumar, Fong, Xuanyao, Liang, Gengchiau

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Unconventional computing based on magnetic tunnel junction von Cai, Baofang, He, Yihan, Xin, Yue, Yuan, Zhengping, Zhang, Xue, Zhu, Zhifeng, Liang, Gengchiau

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Voltage-input spintronic oscillator based on competing effect for extended oscillation regions von Zhu, Zhifeng, Deng, Jiefang, Fong, Xuanyao, Liang, Gengchiau

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Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality von Lei, Dian, Wang, Wei, Zhang, Zheng, Pan, Jisheng, Gong, Xiao, Liang, Gengchiau, Tok, Eng-Soon, Yeo, Yee-Chia

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Ultrafast and energy-efficient spin–orbit torque switching in compensated ferrimagnets von Cai, Kaiming, Zhu, Zhifeng, Lee, Jong Min, Mishra, Rahul, Ren, Lizhu, Pollard, Shawn D., He, Pan, Liang, Gengchiau, Teo, Kie Leong, Yang, Hyunsoo

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Ultra-low specific contact resistivity (1.4 × 10−9 Ω·cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film von Wu, Ying, Luo, Sheng, Wang, Wei, Masudy-Panah, Saeid, Lei, Dian, Liang, Gengchiau, Gong, Xiao, Yeo, Yee-Chia

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Percolation theory based statistical resistance model for resistive random access memory von Wang, Lingfei, Thean, Aaron Voon-Yew, Liang, Gengchiau

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Klein tunneling in Weyl semimetals under the influence of magnetic field von Yesilyurt, Can, Tan, Seng Ghee, Liang, Gengchiau, Jalil, Mansoor B. A.

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Erratum: “Voltage-input spintronic oscillator based on competing effect for extended oscillation regions” [J. Appl. Phys. 125, 183902 (2019)] von Zhu, Zhifeng, Deng, Jiefang, Fong, Xuanyao, Liang, Gengchiau

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Disorder enhances thermoelectric figure of merit in armchair graphane nanoribbons von Ni, Xiaoxi, Liang, Gengchiau, Wang, Jian-Sheng, Li, Baowen

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Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ von Deng, Jiefang, Liang, Gengchiau, Gupta, Gaurav

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A statistical Seebeck coefficient model based on percolation theory in two-dimensional disordered systems von Wang, Lingfei, Thean, Aaron Voon-Yew, Liang, Gengchiau

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