Chemical vapor deposition of copper from Cu+1 precursors in the presence of water vapor von GELATOS, A. V, MARSH, R, KOTTKE, M, MOGAB, C. J

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Bias stress-induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures : is the carrier-induced defect creation model correct ? von GELATOS, A. V, KANICKI, J

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Drive-level capacitance profiling: its application to determining gap state densities in hydrogenated amorphous silicon films von MICHELSON, C. E, GELATOS, A. V, COHEN, J. D

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Selective chemical vapor deposition of copper using (hfac) copper(I) vinyltrimethylsilane in the absence and presence of water von Jain, A., Gelatos, A.V., Kodas, T.T., Hampden-Smith, M.J., Marsh, R., Mogab, C.J.

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SOME ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON AMORPHOUS-SILICON NITRIDE INTERFACES - TOP NITRIDE AND BOTTOM NITRIDE CONFIGURATIONS IN MNS AND TFT DEVICES von GODET, C, KANICKI, J, GELATOS, AV

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Direct observation of the silicon nitride on amorphous silicon interface states von GELATOS, A. V, KANICKI, J

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Transient photocapacitance and photocurrent studies of undoped hydrogenated amorphous silicon von GELATOS, A. V, MAHAVADI, K. K, COHEN, J. D, HARBISON, J. P

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Assessment of lattice relaxation effects in transitions from mobility gap states in hydrogenated amorphous silicon using transient photocapacitance techniques von GELATOS, A. V, COHEN, J. D, HARBISON, J. P

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Deep defect structure and carrier dynamics in amorphous silicon and silicon-germanium alloys determined by transient photocapacitance methods von Cohen, J. David, Unold, Thomas, Gelatos, Avgerinos V., Fortmann, Charles M.

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Junction capacitance studies of deep defects in undoped hydrogenated amorphous silicon von Cohen, J.D., Gelatos, A.V., Mahavadi, K.K., Zellama, K.

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Selective chemical vapor deposition of copper using (hfac) copper(I) vinyltrimethylsilane in the absence and presence of water: Copper-based metallizationand interconnects for ultr... von JAIN, A, GELATOS, A. V, KODAS, T. T, HAMPDEN-SMITH, M. J, MARSH, R, MOGAB, C. J

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Observtion of an oxygen-related mobility-gap defect in ion-implanted hydrogenated amorphous silicon films von Michelson, CE, Gelatos, AV, Cohen, JD, Harbison, JP

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Observation of an oxygen-related mobility-gap defect in ion-implanted hydrogenated amorphous silicon films von MICHELSON, C. E, GELATOS, A. V, COHEN, J. D, HARBISON, J. P

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Capacitance studies of optical and thermal transitions from mobility gap states in hydrogenated amorphous silicon von Gelatos, Avgerinos V., David Cohen, J.

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Correlation of optical and thermal emission from mobility GAP states in doped hydrogenated amorphous silicon von Gelatos, Avgerinos V., David Cohen, J., Harbison, James P.

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SELECTIVE CAPPING OF CONTACT LAYER FOR CMOS DEVICES von PRANATHARTHIHARAN, Balasubramanian, GELATOS, Avgerinos V

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CAVITY SHAPING AND SELECTIVE METAL SILICIDE FORMATION FOR CMOS DEVICES von BREIL, Nicolas Louis, GELATOS, Avgerinos V

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CAVITY SHAPING AND SELECTIVE METAL SILICIDE FORMATION FOR CMOS DEVICES von BREIL, Nicolas Louis, GELATOS, Avgerinos V

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SELECTIVE MOSI DEPOSITION von EMPANTE, Thomas Anthony, GELATOS, Avgerinos V

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SELECTIVE MOSI DEPOSITION von Empante, Thomas Anthony, Gelatos, Avgerinos V

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