On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors von Bakeroot, B., You, S., Wu, T.-L., Hu, J., Van Hove, M., De Jaeger, B., Geens, K., Stoffels, S., Decoutere, S.

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1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates von Kumar, S., Geens, K., Vohra, A., Wellekens, D., Cingu, D., Fabris, E., Cosnier, T., Hahn, H., Bakeroot, B., Posthuma, N., Langer, R., Decoutere, S.

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Study and characterization of GaN MOS capacitors: Planar vs trench topographies von Mukherjee, K., De Santi, C., You, S., Geens, K., Borga, M., Decoutere, S., Bakeroot, B., Diehle, P., Altmann, F., Meneghesso, G., Zanoni, E., Meneghini, M.

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Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy von Lechaux, Y, Minj, A, Méchin, L, Liang, H, Geens, K, Zhao, M, Simoen, E, Guillet, B

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Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal–oxide semiconductor compatible process von Stoffels, S., Geens, K., Li, X., Wellekens, D., You, S., Zhao, M., Borga, M., Zanoni, E., Meneghesso, G., Meneghini, M., Posthuma, N.E., Van Hove, M., Decoutere, S.

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CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon von Van Hove, M., Boulay, S., Bahl, S. R., Stoffels, S., Xuanwu Kang, Wellekens, D., Geens, K., Delabie, A., Decoutere, S.

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Lymphomatous meningosis diagnosed with [18F]-fluorodeoxyglucose-positron-emission tomography/CT von Ceyssens, S, Van den Wyngaert, T, Blockx, P, van den Hauwe, L, Parizel, P M, Geens, K

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Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors von Favero, D., De Santi, C., Mukherjee, K., Borga, M., Geens, K., Chatterjee, U., Bakeroot, B., Decoutere, S., Rampazzo, F., Meneghesso, G., Zanoni, E., Meneghini, M.

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Vertical GaN devices: Process and reliability von You, Shuzhen, Geens, Karen, Borga, Matteo, Liang, Hu, Hahn, Herwig, Fahle, Dirk, Heuken, Michael, Mukherjee, Kalparupa, De Santi, Carlo, Meneghini, Matteo, Zanoni, Enrico, Berg, Martin, Ramvall, Peter, Kumar, Ashutosh, Björk, Mikael T., Ohlsson, B. Jonas, Decoutere, Stefaan

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Spontaneous Closure of Cerebral Dural Arteriovenous Fistulas with Direct Cortical Venous Drainage: A Case Report von Voormolen, M., Geens, K., Van Den Hauwe, L., Parizel, P.M.

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Exploration of gate trench module for vertical GaN devices von Ruzzarin, M., Geens, K., Borga, M., Liang, H., You, S., Bakeroot, B., Decoutere, S., De Santi, C., Neviani, A., Meneghini, M., Meneghesso, G., Zanoni, E.

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Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates von De Jaeger, B., Van Hove, M., Wellekens, D., Kang, X., Liang, H., Mannaert, G., Geens, K., Decoutere, S.

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Neuraxial analgesia is not associated with an increased risk of post-partum relapses in MS von Lavie, Caroline, Rollot, Fabien, Ionescu, Iuliana, Casey, Romain, Moreau, Thibault, Tourniaire, Patricia, D’Hooghe, Marie Béatrice, Laplaud, David-Axel, Clavelou, Pierre, De Sèze, Jérôme, Pelletier, Jean, Lebrun-Frenay, Christine, Castelnovo, Giovanni, Heinzlef, Olivier, Durelli, Luca, d’Hooghe, M.B., Hutchinson, M., Adeleine, P., Biron, A., Grimaud, J., Hours, M., Moreau, T., Confavreux, C., Chauplannaz, G., Goas, J.Y., Rouhart, F., Mazingue, A., Roullet, E., Benoit, T., Simonin, C., Dumas, R., Loche, D., Bourrin, J.C., Boulay, C., Belair, C., Devoize, J.L., Setiey, A., Comi, G., Filippi, M., Fioretti, C., Meucci, G., Gambi, D., Cavazzuti, M., Hansen, H.J., Fernandez, O., Geffner Sclarky, D., Reyes Yanes, P., Aguilar, M, Arzua-Mouronte, D., Medaer, R., Guillaume, D., Van Zandycke, M., Janssens, J., Cornette, M., Mol, L., Weilbach, F., Flachenecker, P., Strausser-Fuchs, S., Hawkins, S., Howell, S.J.L., Rees, J.E., Boggild, M., Bates, D., Jongen, P., Rio, M.E., Lechner-Scott, J., Kappos, L., Baulieu, E.E., Miller, D.H., Ménard, J., Sitruk-Ware, R., Pelissier, C., Dat, S., Athéa, N., Büschsenschutz, D., Lyon-Caen, O., Boissel, J.P., Ffrench, P., Cotton, F., Bracoud, L., Marignier, R., Laplaud, D.A., Lanctin-Garcia, C., Clavelou, P., Aufauvre, D., Brassat, D., Rico-Lamy, A., Deburghraeve, V., Castelnovo, G., Berger, E., Blondiau, M., Clerc, C., Ouallet, J.C., Minier, D., Thouvenot, E., Toureille, L., Peysson, S., Patti, F., D’Amico, E., Durelli, L.

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Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process von Stoffels, S, Geens, K, Li, X, Wellekens, D, You, S, Zhao, M, Borga, M, Zanoni, E, Meneghesso, G, Meneghini, M, Posthuma, N.E, Van Hove, M, Decoutere, S

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Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance von Srivastava, P., Oprins, H., Van Hove, M., Das, J., Malinowski, P. E., Bakeroot, B., Marcon, D., Visalli, D., Kang, X., Lenci, S., Geens, K., Viaene, J., Cheng, K., Leys, M., De Wolf, I., Decoutere, S., Mertens, R. P., Borghs, G.

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Galantamine (Reminyl) once daily outcome and satisfaction survey (RODOS) in mild to moderate Alzheimer's disease: A study in a real life population von Van Puyvelde, Katrien, Mets, Tony

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Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors von Favero, D, De Santi, C, Mukherjee, K, Borga, M, Geens, K, Chatterjee, U, Bakeroot, B, Decoutere, S, Rampazzo, F, Meneghesso, G, Zanoni, E, Meneghini, M

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Study and characterization of GaN MOS capacitors: planar versus trench topographies von Mukherjee, K, De Santi, C, You, S, Geens, K, Borga, M, Decoutere, S, Bakeroot, B, Diehle, P, Altmann, F, Meneghesso, G, Zanoni, E, Meneghini, M

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Epidemiology of major depression in Belgian parkinsonian patients von VANDERHEYDEN, Jean-Emile, GONCE, Michel, BOURGEOIS, Philip, CRAS, Patrick, ROCH DE NAYER, André, FLAMEZ, Anja, SUPIOT, Frédéric, DONNEAU, Anne-Françoise, ALBERT, Adelin, BERLAIMONT, Valérie

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GaN-on-Si power field effect transistors von Germain, M, Derluyn, J, Van Hove, M, Medjdoub, F, Das, J, Cheng, S D K, Leys, M, Visalli, D, Marcon, D, Geens, K, Viaene, J, Sijmus, B, Decoutere, S, Cartuyvels, R, Borghs, G

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