Impact of device scaling on the electrical properties of MoS2 field-effect transistors von Arutchelvan, Goutham, Smets, Quentin, Verreck, Devin, Ahmed, Zubair, Gaur, Abhinav, Sutar, Surajit, Jussot, Julien, Groven, Benjamin, Heyns, Marc, Lin, Dennis, Asselberghs, Inge, Radu, Iuliana

Volltext

Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS2 von Gaur, Abhinav, Chiappe, Daniele, Lin, Dennis, Cott, Daire, Asselberghs, Inge, Heyns, Marc, Radu, Iuliana

Volltext

Understanding Charge Behaviour in a 2D Transition Metal Dichalcogenide MOS System von Gaur, Abhinav

Volltext bestellen

MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High‑κ Dielectrics von Zhang, Haodong, Arutchelvan, Goutham, Meersschaut, Johan, Gaur, Abhinav, Conard, Thierry, Bender, Hugo, Lin, Dennis, Asselberghs, Inge, Heyns, Marc, Radu, Iuliana, Vandervorst, Wilfried, Delabie, Annelies

Volltext

Comparative index for water pollution by rural and urban means von Gaur, Abhinav, Prakash, Om, Joshi, Hem C

Volltext

Cyanide in industrial wastewaters and its removal: A review on biotreatment von Dash, Rajesh Roshan, Gaur, Abhinav, Balomajumder, Chandrajit

Volltext

Impact of device scaling on the electrical properties of MoS2 field-effect transistors von Arutchelvan, Goutham, Smets, Quentin, Verreck, Devin, Ahmed, Zubair, Gaur, Abhinav, Sutar, Surajit, Jussot, Julien, Groven, Benjamin, Heyns, Marc, Lin, Dennis, Asselberghs, Inge, Radu, Iuliana

Volltext

A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance von Gaur, Abhinav, Agarwal, Tarun, Asselberghs, Inge, Radu, Iuliana, Heyns, Marc, Lin, Dennis

Volltext

Towards an automated innovization method for handling discrete search spaces von Gaur, Abhinav, Deb, Kalyanmoy

Volltext

Development, analysis and applications of a quantitative methodology for assessing customer satisfaction using evolutionary optimization von Bandaru, Sunith, Gaur, Abhinav, Deb, Kalyanmoy, Khare, Vineet, Chougule, Rahul, Bandyopadhyay, Pulak

Volltext

MoS 2 Functionalization with a Sub-nm Thin SiO 2 Layer for Atomic Layer Deposition of High-κ Dielectrics von Zhang, Haodong, Arutchelvan, Goutham, Meersschaut, Johan, Gaur, Abhinav, Conard, Thierry, Bender, Hugo, Lin, Dennis, Asselberghs, Inge, Heyns, Marc, Radu, Iuliana, Vandervorst, Wilfried, Delabie, Annelies

Volltext

MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-k Dielectrics von Zhang, Haodong, Arutchelvan, Goutham, Meersschaut, Johan, Gaur, Abhinav, Conard, Thierry, Bender, Hugo, Lin, Dennis, Asselberghs, Inge, Heyns, Marc, Radu, Iuliana, Delabie, Annelies

Volltext

Integration of broken-gap heterojunction InAs/GaSb Esaki tunnel diodes on silicon von Bhatnagar, Kunal, Caro, Manuel P., Rojas-Ramirez, Juan S., Droopad, Ravi, Thomas, Paul M., Gaur, Abhinav, Filmer, Matthew J., Rommel, Sean L.

Volltext

Process-Monitoring-for-Quality—A Model Selection Criterion for Genetic Programming von Escobar, Carlos A., Wegner, Diana M., Gaur, Abhinav, Morales-Menendez, Ruben

Volltext

Overview of Coronavirus Behaviour in Hill State Uttarakhand and Most Affected States in India von Gaur, Abhinav, Prakash, Om, Joshi, Hem C, Kumar, Ajay, Verma, Anil, Guru, S. K.

Volltext

Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS 2 von Gaur, Abhinav, Chiappe, Daniele, Lin, Dennis, Cott, Daire, Asselberghs, Inge, Heyns, Marc, Radu, Iuliana

Volltext

Demonstration of 2e12 cm⁻² eV⁻¹ 2D-oxide interface trap density on back-gated MoS₂ flake devices with 2.5 nm EOT von Gaur, Abhinav, Balaji, Yashwanth, Lin, D, Adelmann, C, Van Houdt, Jan, Heyns, Marc, Mocuta, D, Radu, I

Volltext

Fabrication and characterization of sub-micron In0.53Ga0.47As p-i-n diodes von Gaur, Abhinav, Filmer, Matthew, Thomas, Paul, Bhatnagar, Kunal, Droopad, Ravi, Rommel, Sean

Volltext

Surface treatments to reduce leakage current in In0.53Ga0.47As p-i-n diodes von Gaur, Abhinav, Manwaring, Ian, Filmer, Matthew J., Thomas, Paul M., Rommel, Sean L., Bhatnagar, Kunal, Droopad, Ravi

Volltext

Impact of device scaling on the electrical properties of MoS 2 field-effect transistors von Arutchelvan, Goutham, Smets, Quentin, Verreck, Devin, Ahmed, Zubair, Gaur, Abhinav, Sutar, Surajit, Jussot, Julien, Groven, Benjamin, Heyns, Marc, Lin, Dennis, Asselberghs, Inge, Radu, Iuliana

Volltext