On the use of dimeric antimony in molecular beam epitaxy von Rouillard, Y., Lambert, B., Toudic, Y., Baudet, M., Gauneau, M.

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Anomalous behavior of ion-implanted GaSb von CALLEC, R, FAVENNEC, P. N, SALVI, M, L'HARIDON, H, GAUNEAU, M

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Optical activation of Er3+ implanted in silicon by oxygen impurities von FAVENNEC, P. N, L'HARIDON, H, MOUTONNET, D, SALVI, M, GAUNEAU, M

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High reflectivity 1.55 μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates von Lambert, B., Toudic, Y., Rouillard, Y., Gauneau, M., Baudet, M., Alard, F., Valiente, I., Simon, J. C.

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Study of a WSi2/polycrystalline silicon/monocrystalline silicon structure for a complementary metal-oxide-semiconductor for a compatible self-aligned bipolar transistor emitter von Giroult, G., Nouailhat, A., Gauneau, M.

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Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices von Hbib, H., Bonnaud, O., Gauneau, M., Hamedi, L., Marchand, R., Quemerais, A.

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Boron diffusion in SiO2 based dielectric thin layers von NEDELEC, S, MATHIOT, D, GAUNEAU, M, STRABONI, A

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Influence of halogenation on superconducting properties of oxygen-deficient YBa2CU3Ox thin films. Comparison with halogenation of YBa2CU3Ox ceramics von MASSIOT, P, PERRIN, C, GUILLOUX-VIRY, M, GAUNEAU, M

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Impurities and dopants in vanadium doped CdTe von Gauneau, M., Volle, R., Martel, G., Moisan, J.Y.

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Optical Activation of Er 3+ Implanted in Silicon by Oxygen Impurities von Favennec, P. N., L'Haridon, H., Moutonnet, D., Salvi, M., Gauneau, M.

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Unintentional hydrogen concentration in liquid encapsulation Czochralski grown III–V compounds von Clerjaud, B., Côte, D., Naud, C., Gauneau, M., Chaplain, R.

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Relationship between deep levels in vanadium-doped CdTe and photorefractive effect von Zerrai, A., Marrakchi, G., Bremond, G., Moisan, J.Y., Martel, G., Gauneau, M., Lambert, B., Gravey, P., Wolffer, N., Aoudia, A., Marfaing, Y., Triboulet, R., Koebel, J.M., Hadj-Ali, M., Siffert, P.

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GaPSb : a new ternary material for Schottky diode fabrication on InP von LOUALICHE, S, LE CORRE, A, SALAUN, S, CAULET, J, LAMBERT, B, GAUNEAU, M, LECROSNIER, D, DEVEAUD, B

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Realization and characterization of Er and Yb glasses obtained by the sol-gel method von Moutonnet, D., Chaplain, R., Gauneau, M., Pelous, Y., Rehspringer, J.L.

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Secondary ion mass spectrometry generates swelling of GaSb : depth resolution and secondary ion yields von GAUNEAU, M, CHAPLAIN, R, RUPERT, A, TOUDIC, Y, CALLEC, R, ANDRE, E

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Influence of zinc on the photorefractive behaviour of Cd1-xZnxTe:V von MARTEL, G, MOISAN, J. Y, TRIBOULET, R, BUSCH, M. C, HADJ-ALI, M, KOEBEL, J. M, SIFFERT, P, BREMOND, G, ZERRAI, A, MARRAKCHI, G, LAMBERT, B, GAUNEAU, M, STEPHAN, S, WOLFFER, N, GRAVEY, P, AOUDIA, A, RZEPKA, E, MARFAING, Y

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Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors von Lambert, B, Corre, A Le, Toudic, Y, Lhomer, C, Grandpierre, G, Gauneau, M

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Mixage ionique sur des structures Au/InP von L'Haridon, H., Chaplain, R., Gauneau, M., Guivarc'h, A., Pelous, G., Dearnaley, G., Goode, P.D.

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A comparative study of TiSi2 obtained by solid-state reaction and chemical vapor deposition von GOUY-PAILLER, P, HAOND, M, MATHIOT, D, GAUNEAU, M, PERIO, A, REGOLINI, J. L

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Grain boundary enhanced oxygen out-diffusion in annealed polycrystalline Si/SiO2/crystalline Si structures von Devine, R.A.B, Mathiot, D, Xu, J-B, Wilson, I.H, Gauneau, M, Warren, W.L

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