Probing deeper by hard x-ray photoelectron spectroscopy von Risterucci, P., Renault, O., Martinez, E., Detlefs, B., Delaye, V., Zegenhagen, J., Gaumer, C., Grenet, G., Tougaard, S.

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Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks von Essa, Z., Gaumer, C., Pakfar, A., Gros-Jean, M., Juhel, M., Panciera, F., Boulenc, P., Tavernier, C., Cristiano, F.

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Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications von Salaün, A., Grampeix, H., Buckley, J., Mannequin, C., Vallée, C., Gonon, P., Jeannot, S., Gaumer, C., Gros-Jean, M., Jousseaume, V.

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Measurement of Dipoles/Roll-Off /Work Functions by Coupling CV and IPE and Study of Their Dependence on Fabrication Process von Charbonnier, Matthieu, Leroux, Charles, Cosnier, V, Besson, P, Martinez, E, Benedetto, N, Licitra, Christophe, Rochat, Névine, Gaumer, C, Kaja, K, Ghibaudo, Gérard, Martin, François, Reimbold, Gilles

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Soft X-ray photoemission study of nitrogen diffusion in TiN/HfO:N gate stacks von Martinez, E., Gaumer, C., Lhostis, S., Licitra, C., Silly, M., Sirotti, F., Renault, O.

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Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks von GAUMER, C, MARTINEZ, E, CHABLI, A, LHOSTIS, S, GUITTET, M.-J, GROS-JEAN, M, BARNES, J.-P, LICITRA, C, ROCHAT, N, BARRETT, N, BERTIN, F

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Electrical and Chemical Properties of the HfO[sub 2]/SiO[sub 2]/Si Stack: Impact of HfO[sub 2] Thickness and Thermal Budget von Martinez, E., Leroux, C., Benedetto, N., Gaumer, C., Charbonnier, M., Licitra, C., Guedj, C., Fillot, F., Lhostis, S.

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New insight on VT stability of HK/MG stacks with scaling in 30nm FDSOI technology von Brunet, L, Garros, X, Cassé, M, Weber, O, Andrieu, F, Fenouillet-Béranger, C, Perreau, P, Martin, F, Charbonnier, M, Lafond, D, Gaumer, C, Lhostis, S, Vidal, V, Brevard́, L, Tosti, L, Denorme, S, Barnola, S, Damlencourt, J F, Loup, V, Reimbold, G, Boulanger, F, Faynot, O, Bravaix, A

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Efforts to Manage and Reduce Discharge Pharmacy Crises Among High Risk HSCT Patients von Gaumer, C, Holland, D, Emmert, A

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Ge Condensation Using Rapid Thermal Oxidation for SGOI Substrate Preparation von Gourhant, Olivier, Pribat, Clement, Barge, David, Mazzocchi, Vincent, Andrieu, François, Abbate, Francesco, Juhel, Marc, Gaumer, Clement, Baylac, Elise, Pofelski, Alexandre, Bidaud, Maud, Serventon, Germain

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Chemical and Structural Properties of a TaN/HfO[sub 2] Gate Stack Processed Using Atomic Vapor Deposition von Gaumer, C., Martinez, E., Lhostis, S., Wiemer, C., Perego, M., Loup, V., Lafond, D., Fabbri, J.-M.

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Measurement of Dipoles/Roll-Off /Work functions by coupling CV and IPE and study of their dependence on fabrication process von Charbonnier, M., Leroux, Cédric, Cosnier, V., Besson, P., Martinez, E., Benedetto, N., Licitra, C., Rochat, N., Gaumer, C., Kaja, K., Ghibaudo, G., Martin, F., Reimbold, G.

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Impact of the TiN electrode deposition on the HfO 2 band gap for advanced MOSFET gate stacks von Gaumer, C., Martinez, E., Lhostis, S., Guittet, M.-J., Gros-Jean, M., Barnes, J.-P., Licitra, C., Rochat, N., Barrett, N., Bertin, F., Chabli, A.

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Impact of the TiN electrode deposition on the HfO sub(2) band gap for advanced MOSFET gate stacks von Gaumer, C, Martinez, E, Lhostis, S, Guittet, M-J, Gros-Jean, M, Barnes, J-P, Licitra, C, Rochat, N, Barrett, N, Bertin, F, Chabli, A

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V T Stability Of High-K/Metal Gate Stacks with Device Scaling in 30nm FDSOI Technology von Garros, Xavier, Brunet, Laurent, Cassé, Mikael, Weber, Olivier, Andrieu, Francois, Lafond, Dominique, Gaumer, Clément, Reimbold, Gilles, Boulanger, Fabien

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New insight on high-k/metal gate reliability modeling for providing guidelines for process development von Rafik, M., Ribes, G., Mora, P., Blonkowski, S., Federspiel, X., Caubet, P., Gaumer, C., Grosjean, M., Roy, D.

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Soft X-ray photoemission study of nitrogen diffusion in TiN/HfO:N gate stacks von MARTINEZ, E, GAUMER, C, LHOSTIS, S, LICITRA, C, SILLY, M, SIROTTI, F, RENAULT, O

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Electrical and Chemical Properties of the HfO2/SiO2/Si Stack: Impact of HfO2 Thickness and Thermal Budget von Martinez, Eugenie, Leroux, Charles, Benedetto, Nicolas, Gaumer, Clement, Charbonnier, Mathieu, Licitra, Christophe, Guedj, Cyril, Fillot, Frédéric, Lhostis, Sandrine

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Detrimental impact of technological processes on BTI reliability of advanced high-K/metal gate stacks von Garros, X., Casse, M., Fenouillet-Beranger, C., Reimbold, G., Martin, F., Gaumer, C., Wiemer, C., Perego, M., Boulanger, F.

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Interface Study in a "Metal / High-k" Gate Stack: Tantalum Nitride on Hafnium Oxide von Gaumer, Clement, Martinez, Eugenie, Lhostis, Sandrine, Wiemer, Claudia, Perego, Michele, Loup, Virginie, Lafond, Dominique, Fabbri, Jean-Marc

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