Ion Implantation of GrapheneToward IC Compatible Technologies von Bangert, U, Pierce, W, Kepaptsoglou, D. M, Ramasse, Q, Zan, R, Gass, M. H, Van den Berg, J. A, Boothroyd, C. B, Amani, J, Hofsäss, H

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Focused Ion beam implantation of diamond von McKenzie, W.R., Quadir, Md.Z., Gass, M.H., Munroe, P.R.

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Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures von Spirkoska, D., Arbiol, J., Gustafsson, A., Conesa-Boj, S., Glas, F., Zardo, I., Heigoldt, M., Gass, M. H., Bleloch, A. L., Estrade, S., Kaniber, M., Rossler, J., Peiro, F., Morante, J. R., Abstreiter, G., Samuelson, L., Fontcuberta i Morral, A.

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Blocking of indium incorporation by antimony in III–V-Sb nanostructures von Sanchez, A M, Beltran, A M, Beanland, R, Ben, T, Gass, M H, de la Peña, F, Walls, M, Taboada, A G, Ripalda, J M, Molina, S I

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Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN–AlGaN axial heterostructure nanowires von Lari, L., Walther, T., Gass, M.H., Geelhaar, L., Chèze, C., Riechert, H., Bullough, T.J., Chalker, P.R.

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Manifestation of ripples in free-standing graphene in lattice images obtained in an aberration-corrected scanning transmission electron microscope von Bangert, U., Gass, M. H., Bleloch, A. L., Nair, R. R., Geim, A. K.

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Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices von Davies, S., Huang, T. S., Gass, M. H., Papworth, A. J., Joyce, T. B., Chalker, P. R.

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Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE von Lari, L., Murray, R. T., Gass, M. H., Bullough, T. J., Chalker, P. R., Kioseoglou, J., Dimitrakopulos, G. P., Kehagias, Th, Komninou, Ph, Karakostas, Th, Chèze, C., Geelhaar, L., Riechert, H.

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Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra von SANCHEZ, A. M, BEANLAND, R, GASS, M. H, PAPWORTH, A. J, GOODHEW, P. J, HOPKINSON, M

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Vacancy clusters, dislocations and brown colouration in diamond von Bangert, U, Barnes, R, Gass, M H, Bleloch, A L, Godfrey, I S

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Nanotopography of graphene von Bangert, U., Gass, M. H., Bleloch, A. L., Nair, R. R., Eccles, J.

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Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra von Sanchez, A. M., Beanland, R., Papworth, A. J., Goodhew, P. J., Gass, M. H.

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Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates von DAVIES, S, HUANG, T. S, MURRAY, R. T, GASS, M. H, PAPWORTH, A. J, JOYCE, T. B, CHALKER, P. R

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Compositional analysis of InAs-GaAs-GaSb heterostructures by Low-Loss Electron Energy Loss Spectroscopy von Beltrán, A M, Ben, T, Sánchez, A M, Gass, M H, Taboada, A G, Ripalda, J M, Molina, S I

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Doping of few-layered graphene and carbon nanotubes using ion implantation von Bangert, U., Bleloch, A., Gass, M. H., Seepujak, A., van den Berg, J.

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Properties of GaN Nanowires Grown by Molecular Beam Epitaxy von Geelhaar, L., Chèze, C., Jenichen, B., Brandt, O., Pfüller, C., Münch, S., Rothemund, R., Reitzenstein, S., Forchel, A., Kehagias, T., Komninou, P., Dimitrakopulos, G. P., Karakostas, T., Lari, L., Chalker, P. R., Gass, M. H., Riechert, H.

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Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy von Gass, M. H., Papworth, A. J., Joyce, T. B., Bullough, T. J., Chalker, P. R.

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Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking von Arbiol, Jordi, Estradé, Sònia, Prades, Joan D, Cirera, Albert, Furtmayr, Florian, Stark, Christoph, Laufer, Andreas, Stutzmann, Martin, Eickhoff, Martin, Gass, Mhairi H, Bleloch, Andrew L, Peiró, Francesca, Morante, Joan R

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Structure of hydrogen-dosed graphene deduced from low electron energy loss characteristics and density functional calculations von Bangert, U., Pan, C. T., Nair, R. R., Gass, M. H.

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C/CrC nanocomposite coating deposited by magnetron sputtering at high ion irradiation conditions von Zhou, Z., Rainforth, W. M., Gass, M. H., Bleloch, A., Ehiassarian, A. P., Hovsepian, P. Eh

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