Hopping conduction and LF noise in structures with Ge nanoclusters grown on oxidized Si(001) von Lysenko, V. S., Gomeniuk, Y. V., Kudina, V. N., Garbar, N. P., Kondratenko, S. V., Melnichuk, Ye. Ye, Kozyrev, Y. N.

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Influence of the substrate voltage on the random telegraph signal parameters in submicron n-channel metal-oxide-semiconductor field-effect transistors under a constant inversion ch... von LUKYANCHIKOVA, N. B, PETRICHUK, M. V, GARBAR, N. P, SIMOEN, E, CLAEYS, C

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Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface von Lukyanchikova, N B, Petrichuk, M V, Garbar, N P, Simoen, E, Claeys, C

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RTS capture kinetics and Coulomb blockade energy in submicron nMOSFETs under surface quantization conditions von Lukyanchikova, N.B., Petrichuk, M.V., Garbar, N.P., Simoen, E., Claeys, C.

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A study of noise in surface and buried channel SiGe MOSFETs with gate oxide grown by low temperature plasma anodization von Lukyanchikova, N.B, Petrichuk, M.V, Garbar, N.P, Riley, L.S, Hall, S

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Excess white noise in bipolar junction transistors von Lukyanchikova, N.B., Garbar, N.P., Petrichuk, M.V.

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Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n -metal–oxide–semiconductor field-effect transistors von Lukyanchikova, N. B., Petrichuk, M. V., Garbar, N. P., Simoen, E., Claeys, C.

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Hopping Conduction in Structures with Ge Nanoclusters Grown on Oxidized Si (001) von Kozyrev, Yurii N., Gomeniuk, Y.V., Kudina, Valeriya N., Garbar, Nikolay, Lysenko, Vladimir, Kondratenko, Sergey, Melnichuk, Yevgenij Ye

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Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiOx/Ge Structures von Garbar, N.P., Kozyrev, Yu.N., Kudina, Valeriya N., Kondratenko, S.V., Lysenko, V.S.

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1/f noise and generation-recombination processes at discrete levels in semiconductors von Lukyanchikova, N.B., Petrichuk, M.V., Garbar, N.P., Saščiuk, A.P., Kropman, D.I.

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Study of degradation of diode structures by the use of probes von Lukyanchikova, N. B., Garbar, N. P., Lisyanskii, M. I.

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Light and voltage noise of lasers based on AlxGa1-xAsGaAs heterojunctions von Lukyanchikova, N. B., Garbar, N. P., Zargaryants, M. N.

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Non-trivial GR and 1/ f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO 2 interface von Lukyanchikova, N B, Petrichuk, M V, Garbar, N P, Simoen, E, Claeys, C

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Single Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETs von Simoen, Eddy, Lukyanchikova, N.B., Petrichuk, M.V., Garbar, N.P., Claeys, Cor

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Nature of current and of forward-bias electroluminescence excess noise in GaAs-diodes von Lukyanchikova, N.B., Garbar, N.P., Sheinkman, M.K., Zargarjantz, M.N.

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Excess current and luminescence noise of P-N junctions in GaP von Lukyanchikova, N.B., Sheinkman, M.K., Garbar, N.P., Svechnikov, S.V.

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Noise in p-channel SiGe and Si MOSFETs with gate oxide grown by low temperature plasma anodisation von Lukyanchikova, N.B., Petrichuk, M.V., Garbar, N.P., Riley, L.S., Hall, S.

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Noise investigation of SiGe and Si nMOSFETs with gate oxide grown by low temperature plasma anodisation von Lukyanchikova, N.B., Petrichuk, M.V., Garbar, N.P., Riley, L.S., Hall, S.

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Study of degradation of diode structures by the use of probes von Lukyanchikova, N. B., Garbar, N. P., Lisyanskii, M. I.

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Noise characterization of AlGaAs/GaAs HBTs with different emitter contacts von Lukyanchikova, N.B., Garbar, N.P., Petrichuk, M.V., Rezazadeh, A.A., Bashar, S.A.

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