Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film von Cheng, Yan, Gao, Zhaomeng, Ye, Kun Hee, Park, Hyeon Woo, Zheng, Yonghui, Zheng, Yunzhe, Gao, Jianfeng, Park, Min Hyuk, Choi, Jung-Hae, Xue, Kan-Hao, Hwang, Cheol Seong, Lyu, Hangbing

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Wake‐Up Effect in HfO2‐Based Ferroelectric Films von Jiang, Pengfei, Luo, Qing, Xu, Xiaoxin, Gong, Tiancheng, Yuan, Peng, Wang, Yuan, Gao, Zhaomeng, Wei, Wei, Tai, Lu, Lv, Hangbing

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Frequency dependence on polarization switching measurement in ferroelectric capacitors von Gao, Zhaomeng, Lyu, Shuxian, Lyu, Hangbing

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Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility von Chen, Yuting, Yang, Yang, Yuan, Peng, Jiang, Pengfei, Wang, Yuan, Xu, Yannan, Lv, Shuxian, Ding, Yaxin, Dang, Zhiwei, Gao, Zhaomeng, Gong, Tiancheng, Wang, Yan, Luo, Qing

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Down-Regulation of MiR-150 Alleviates Inflammatory Injury Induced by Interleukin 1 via Targeting Kruppel-Like Factor 2 in Human Chondrogenic Cells von Yang, Xirui, Zhang, Qi, Gao, Zhaomeng, Yu, Chunyan, Zhang, Lei

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Non-volatile resistance switching in LaNiO3 films on PMN-PT substrates von Li, Mengxin, Gao, Zhaomeng, Wang, Xiaoshuo, Kang, Chaoyang, Liu, Xiansheng, Jia, Caihong, Luo, Caiqin, Zhang, Weifeng

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Effect of Nd and Mn Co-Doping on Dielectric, Ferroelectric and Photovoltaic Properties of BiFeO3 von Wu, Qiyuan, Song, Yanling, Jia, Caihong, Gao, Zhaomeng, Zhang, Weifeng

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Optimization of the In Situ Biasing FIB Sample Preparation for Hafnia-Based Ferroelectric Capacitor von Zhong, Qilan, Wang, Yiwei, Cheng, Yan, Gao, Zhaomeng, Zheng, Yunzhe, Xin, Tianjiao, Zheng, Yonghui, Huang, Rong, Lyu, Hangbing

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Baicalin alleviates IL-1β-induced inflammatory injury via down-regulating miR-126 in chondrocytes von Yang, Xirui, Zhang, Qi, Gao, Zhaomeng, Yu, Chunyan, Zhang, Lei

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Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film von Gao, Zhaomeng, Luo, Yubo, Lyu, Shuxian, Cheng, Yan, Zheng, Yonghui, Zhong, Qilan, Zhang, Weifeng, Lyu, Hangbing

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High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO3 films von Song, Yanling, Wu, Qiyuan, Jia, Caihong, Gao, Zhaomeng, Zhang, Weifeng

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High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO 3 films von Song, Yanling, Wu, Qiyuan, Jia, Caihong, Gao, Zhaomeng, Zhang, Weifeng

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Improved Endurance of Hf₀.₅Zr₀.₅O2-Based Ferroelectric Capacitor Through Optimizing the Ti-N Ratio in TiN Electrode von Dang, Zhiwei, Lv, Shuxian, Gao, Zhaomeng, Chen, Meiwen, Xu, Yannan, Jiang, Pengfei, Ding, Yaxin, Yuan, Peng, Wang, Yuan, Chen, Yuting, Luo, Qing, Wang, Yan

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Texture in atomic layer deposited Hf0.5Zr0.5O2 ferroelectric thin films von Wang, Yiwei, Zhong, Qilan, Gao, Zhaomeng, Zheng, Yunzhe, Xin, Tianjiao, Liu, Cheng, Xu, Yilin, Zheng, Yonghui, Cheng, Yan

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The Fluctuation Effect of Remnant Polarization in Hf₀.₅Zr₀.₅O₂ Capacitors at Elevated Temperatures von Gao, Zhaomeng, Zheng, Yunzhe, Xin, Tianjiao, Liu, Cheng, Zhao, Qiwendong, Xu, Yilin, Zheng, Yonghui, Lin, Xiaoling, Lyu, Hangbing, Cheng, Yan

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Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf 0.5 Zr 0.5 O 2 Film von Gao, Zhaomeng, Luo, Yubo, Lyu, Shuxian, Cheng, Yan, Zheng, Yonghui, Zhong, Qilan, Zhang, Weifeng, Lyu, Hangbing

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Performance Optimization for Ferroelectric HfZrO x on a Ge Substrate by Modifying the Deposition Temperature von Lyu, Shuxian, Jiang, Pengfei, Gao, Zhaomeng, Yang, Yang, Chen, Yuanxiang, Wang, Boping, Chen, Meiwen, Wang, Yuan, Chen, Yuting, Wang, Yan

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Performance Optimization for Ferroelectric HfZrOx on a Ge Substrate by Modifying the Deposition Temperature von Lyu, Shuxian, Jiang, Pengfei, Gao, Zhaomeng, Yang, Yang, Chen, Yuanxiang, Wang, Boping, Chen, Meiwen, Wang, Yuan, Chen, Yuting, Wang, Yan

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miR‐145 eliminates lipopolysaccharides‐induced inflammatory injury in human fibroblast‐like synoviocyte MH7A cells von Zhong, Feng, Xu, Jian, Yang, Xirui, Zhang, Qi, Gao, Zhaomeng, Deng, Yao, Zhang, Lei, Yu, Chunyan

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Non-volatile resistance switching in LaNiO 3 films on PMN-PT substrates von Li, Mengxin, Gao, Zhaomeng, Wang, Xiaoshuo, Kang, Chaoyang, Liu, Xiansheng, Jia, Caihong, Luo, Caiqin, Zhang, Weifeng

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