Analyzing switching variability of SiNx-based RRAM in terms of Joule heating dissipation von Duan, Yiwei, Gao, Haixia, Yang, Yintang

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Effect of nitrogen-accommodation ability of electrodes in SiNx-based resistive switching devices von Yang, Mei, Wang, Hong, Ma, Xiaohua, Gao, Haixia, Wang, Bin

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P2X7 receptor mediates NLRP3 inflammasome activation in depression and diabetes von Wang, Danwen, Wang, Hui, Gao, Haixia, Zhang, Heng, Zhang, Hua, Wang, Qiuling, Sun, Zhiling

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Electrode-induced polarity conversion in Nb2O5/NbOx resistive switching devices von Zhou, Ziliang, Yang, Mei, Fu, Zhen, Wang, Hong, Ma, Xiaohua, Gao, Haixia

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Coexistence of analog and digital resistive switching behaviors in TiN/SiNx resistive random access memory device von Gao, Haixia, Zhao, Yang, Zhu, Shilong, Qiu, Xuan, Wang, Rui, Guo, Jingli, Ma, Xiaohua, Yang, Yintang

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Bipolar and complementary resistive switching induced by barrier regulation based on compliance current von Qiu, Xuan, Gao, Haixia, Zhu, Shilong, Bai, Yifan, Zhao, Yang, Wang, Rui, Ma, Xiaohua, Yang, Yintang

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Improved switching stability in SiNx-based RRAM by introducing nitride insertion layer with high conductivity von Yang, Yintang, Duan, Yiwei, Gao, Haixia, Qian, Mengyi, Guo, Jingshu, Yang, Mei, Ma, Xiaohua

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Influence of non-inert electrode thickness on the performance of complementary resistive switching in AlOxNy-based RRAM von Duan, Yiwei, Gao, Haixia, Qian, Mengyi, Sun, Yuxin, Wu, Shuliang, Guo, Jingshu, Yang, Mei, Ma, Xiaohua, Yang, Yintang

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Transient form of polyvinyl alcohol-based devices with configurable resistive switching behavior for security neuromorphic computing von Sun, Jing, Wang, Zhan, Wang, Saisai, Cao, Yaxiong, Gao, Haixia, Wang, Hong, Ma, Xiaohua, Hao, Yue

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In-depth understanding of physical mechanism of the gradual switching in AlOxNy-based RRAM as memory and synapse device von Duan, Yiwei, Gao, Haixia, Qian, Mengyi, Sun, Yuxin, Wu, Shuliang, Guo, Jingshu, Yang, Mei, Ma, Xiaohua, Yang, Yintang

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Dynamic evolution process from bipolar to complementary resistive switching in non-inert electrode RRAM von Duan, Yiwei, Gao, Haixia, Qian, Mengyi, Sun, Yuxin, Wu, Shuliang, Guo, Jingshu, Yang, Mei, Ma, Xiaohua, Yang, Yintang

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The influence of device structure on resistance switching in PbS QDs film inserted RRAM von Sun, Yuxin, Gao, Haixia, Wu, Shuliang, Duan, Yiwei, Qian, Mengyi, Guo, Jingshu, Yang, Mei, Ma, Xiaohua, Yang, Yintang

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An analytical expression for dielectric decrement law von Gao, Haixia, Chang, Yanmei, Xiao, Changming

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Effect of the bottom electrode on the digital and analog resistive switching behavior of SiNx-based RRAM von Qian, Mengyi, Gao, Haixia, Duan, Yiwei, Guo, Jingshu, Bai, Yifan, Zhu, Shilong, Ma, Xiaohua, Yang, Yintang

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Effect of crystallinity on the performance of AlN-based resistive random access memory using rapid thermal annealing von Shen, Xuping, Gao, Haixia, Duan, Yiwei, Sun, Yuxin, Guo, Jingshu, Yu, Zhenxi, Wu, Shuliang, Ma, Xiaohua, Yang, Yintang

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Lipid metabolism-related gene signature predicts prognosis and unveils novel anti-tumor drugs in specific type of diffuse large B cell lymphoma von Wang, Cancan, Zhang, Ran, Zhang, Huan, Gao, Haixia, Zhu, Yubing, Jiao, Lichao, Yi, Zhiqiang, Zhou, Meiyu, Li, Xinxia

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Effect of non-nutritive sucking and sucrose alone and in combination for repeated procedural pain in preterm infants: A randomized controlled trial von Gao, Haixia, Li, Mei, Gao, Honglian, Xu, Guihua, Li, Fang, Zhou, Jing, Zou, Yunsu, Jiang, Honghua

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Long non-coding RNA MEG3 attends to morphine-mediated autophagy of HT22 cells through modulating ERK pathway von Gao, Shuibo, Li, Enyao, Gao, Haixia

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ZnO-Based Physically Transient and Bioresorbable Memory on Silk Protein von Song, Fang, Wang, Hong, Sun, Jing, Gao, Haixia, Wu, Shiwei, Yang, Mei, Ma, Xiaohua, Hao, Yue

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Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM von Duan, Yiwei, Gao, Haixia, Guo, Jingshu, Yang, Mei, Yu, Zhenxi, Shen, Xuping, Wu, Shuliang, Sun, Yuxin, Ma, Xiaohua, Yang, Yintang

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