Nitrogen-related electron traps in Ga(As,N) layers (⩽3% N) von Krispin, P., Gambin, V., Harris, J. S., Ploog, K. H.

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In situ electron backscattered diffraction of individual GaAs nanowires von Prikhodko, S.V., Sitzman, S., Gambin, V., Kodambaka, S.

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GaInNAsSb for 1.3-1.6-μm-long wavelength lasers grown by molecular beam epitaxy von Gambin, V., Wonill Ha, Wistey, M., Homan Yuen, Bank, S.R., Kim, S.M., Harris, J.S.

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Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 μm von Ha, W., Gambin, V., Wistey, M., Bank, S., Seongsin Kim, Harris, J.S.

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Long-wavelength GaInNAs(Sb) lasers on GaAs von Ha, W., Gambin, V., Bank, S., Wistey, M., Yuen, H., Seongsin Kim, Harris, J.S.

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Zincblende to wurtzite transition during the self-catalyzed growth of InP nanostructures von Pozuelo, M., Prikhodko, S.V., Grantab, R., Zhou, H., Gao, L., Sitzman, S.D., Gambin, V., Shenoy, V.B., Hicks, R.F., Kodambaka, S.

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In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy von Heying, B., Smorchkova, I.P., Coffie, R., Gambin, V., Chen, Y.C., Sutton, W., Lam, T., Kahr, M.S., Sikorski, K.S., Wojtowicz, M.

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Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers von Ha, W., Gambin, V., Wistey, M., Bank, S., Yuen, H., Kim, S., Harris, Jr, J.S.

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In situ SiN passivation of AIGaN/GaN HEMTs by molecular beam epitaxy von HEYING, B, SMORCHKOVA, I. P, COFFIE, R, GAMBIN, V, CHEN, Y. C, SUTTON, W, LAM, T, KAHR, M. S, SIKORSKI, K. S, WOJTOWICZ, M

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A 1-25 GHz GaN HEMT MMIC Low-Noise Amplifier von Mingqi Chen, Sutton, W, Smorchkova, I, Heying, B, Wen-Ben Luo, Gambin, V, Oshita, F, Tsai, R, Wojtowicz, M, Kagiwada, R, Oki, A, Jenshan Lin

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Role of Dislocations in Hydrogen-Induced Exfoliation of Narrow Bandgap Semiconductors von Noori, Atif, Hayashi, Sumiko L., Goorsky, Mark, Sandhu, Rajinder, Cavus, Abdullah, Gambin, V., Gutierrez-Aitken, Augusto

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Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy von Lange, M. D., Cavus, A., Monier, C., Sandhu, R. S., Block, T. R., Gambin, V. F., Sawdai, D. J., Gutierrez-Aitken, A. L.

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Thermal conductivity, anisotropy, and interface resistances of diamond on poly-AlN von Bozorg-Grayeli, E., Zijian Li, Gambin, V., Asheghi, M., Goodson, K. E.

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Structural changes on annealing of MBE grown (Ga, In)(N, As) as measured by X-ray absorption fine structure von Gambin, Vincent, Lordi, Vincenzo, Ha, Wonill, Wistey, Mark, Takizawa, Toshiyuki, Uno, Kazuyuki, Friedrich, Stephan, Harris, James

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In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy von Heying, B, Smorchkova, I P, Coffie, R, Gambin, V, Chen, Y C, Sutton, W, Lam, T, Kahr, M S, Sikorski, K S, Wojtowicz, M

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Diamond Materials for GaN HEMT near Junction Heat Removal von Sandhu, R., Gambin, V., Poust, B., Smorchkova, I., Lewis, G., Elmadjian, R., Li, D., Geiger, C., Heying, B., Wojtowicz, M., Oki, A., Feygelson, T., Hobart, K., Bozorg-Grayeli, E., Goodson, K.

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Ga(As,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy von Krispin, P., Gambin, V., Harris, J. S., Ploog, K. H.

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Temperature and Voltage Dependent RF Degradation Study in Algan/gan HEMTs von Coffie, R., Chen, Y., Smorchkova, I.P., Heying, B., Gambin, V., Sutton, W., Chou, Y.-C., Luo, W.-B., Wojtowicz, M., Oki, A.

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GaInNAsSb for 1.3-1.6-[micro]m-long wavelength lasers grown by molecular beam epitaxy von Gambin, V, Ha, Wonill, Wistey, M, Yuen, Homan, Bank, S.R, Kim, S.M, Harris, J.S

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GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy von Gambin, V., Wonill Ha, Wistey, M., Homan Yuen, Bank, S.R., Kim, S.M., Harris, J.S.

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