Extended Analysis of the Z^ -FET: Operation as Capacitorless eDRAM von Navarro, Carlos, Lacord, Joris, Singh Parihar, Mukta, Adamu-Lema, Fikru, Meng Duan, Rodriguez, Noel, Binjie Cheng, El Dirani, Hassan, Barbe, Jean-Charles, Fonteneau, Pascal, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Wells, Paul, Yong-Tae Kim, Asenov, Asen, Cristoloveanu, Sorin, Gamiz, Francisco

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Phase Change Memory Drift Compensation in Spiking Neural Networks Using a Non-Linear Current Scaling Strategy von Palhares, Joao Henrique Quintino, Garg, Nikhil, Beilliard, Yann, Anghel, Lorena, Alibart, Fabien, Drouin, Dominique, Galy, Philippe

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Generic Electrostatic Discharges Protection Solutions for RF and Millimeter-Wave Applications von Lim, Tekfouy, Benech, Philippe, Jimenez, Jean, Fournier, Jean-Michel, Heitz, Boris, Bourgeat, Johan, Galy, Philippe

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Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28nm FD-SOI technology von Athanasiou, Sotirios, Legrand, Charles-Alexandre, Cristoloveanu, Sorin, Galy, Philippe

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On the Low-Frequency Noise Characterization of Z2-FET Devices von Marquez, Carlos, Navarro, Carlos, Navarro, Santiago, Padilla, Jose L., Donetti, Luca, Sampedro, Carlos, Galy, Philippe, Kim, Yong-Tae, Gamiz, Francisco

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Analysis and 3D TCAD simulations of single-qubit control in an industrially-compatible FD-SOI device von Philippopoulos, Pericles, Beaudoin, Félix, Galy, Philippe

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In-Depth Electromagnetic Analysis of ESD Protection for Advanced CMOS Technology During Fast Transient and High-Current Surge von Galy, Philippe, Schoenmaker, Wim

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Exploration of robustness limits and ESD EMI impact in a protection device for advanced CMOS technology von Galy, Philippe, Schoenmaker, Wim

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Design methodology of a 28 nm FD-SOI capacitive feedback RF LNA based on the ACM model and look-up tables von Britton, Giovani, Lauga-Larroze, Estelle, Mir, Salvador, Galy, Philippe

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Coupled electro-magnetic field & Lorentz force effects in silicon and metal for ESD investigation in transient and harmonic regimes von Galy, Philippe, Schoenmaker, Wim

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Fully analog 28nm FD-SOI hardware solution for drift and variability mitigation of embedded PCM memories in spiking neural networks von Palhares, Joao Henrique Quintino, Beilliard, Yann, Garg, Nikhil, Anghel, Lorena, Alibart, F., Drouin, Dominique, Galy, Philippe

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Technology and design study of 3D physics-based inductor on FDSOI in GHz-range von Sabatier, Franck, Durand, Cédric, Drouin, Dominique, Pioro-Ladrière, Michel, Ndagijimana, Fabien, Galy, Philippe

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Reliability Study of Thin-Oxide Zero-Ionization, Zero-Swing FET 1T-DRAM Memory Cell von Navarro, Santiago, Navarro, Carlos, Marquez, Carlos, Salazar, Norberto, Galy, Philippe, Cristoloveanu, Sorin, Gamiz, Francisco

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Experimental Analysis and Modeling of Self-Heating and Thermal Coupling in 28 nm FD-SOI CMOS Transistors Down to Cryogenic Temperatures von Bergamaschi, Flavio Enrico, Frutuoso, Tadeu Mota, Paz, Bruna Cardoso, Billiot, Gerard, Jansen, Aloysius G. M., Galy, Phillipe, Vincent, Emmanuel, Gaillard, Fred, Duriez, Blandine, Casse, Mikael

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Single and compact ESD device Beta-Matrix solution based on bidirectional SCR Network in advanced 28/32 nm technology node von Bourgeat, Johan, Galy, Philippe

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Robust technology computer-aided design of gated quantum dots at cryogenic temperature von Beaudoin, Félix, Philippopoulos, Pericles, Zhou, Chenyi, Kriekouki, Ioanna, Pioro-Ladrière, Michel, Guo, Hong, Galy, Philippe

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Simulation process flow for the implementation of industry-standard FD-SOI quantum dot devices von Kriekouki, Ioanna, Philippopoulos, Pericles, Beaudoin, Félix, Mir, Salvador, Barragan, Manuel J., Pioro-Ladrière, Michel, Galy, Philippe

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Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature von Paz, Bruna Cardoso, Cassé, Mikaël, Haendler, Sebastien, Juge, Andre, Vincent, Emmanuel, Galy, Philippe, Arnaud, Franck, Ghibaudo, Gérard, Vinet, Maud, de Franceschi, Silvano, Meunier, Tristan, Gaillard, Fred

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A tunable and versatile 28 nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses von Palhares, Joao Henrique Quintino, Beilliard, Yann, Sandrini, Jury, Arnaud, Franck, Garello, Kevin, Prenat, Guillaume, Anghel, Lorena, Alibart, Fabien, Drouin, Dominique, Galy, Philippe

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A BIMOS-based 2T1C analogue spiking neuron circuit integrated in 28 nm FD-SOI technology for neuromorphic application von Bédécarrats, Thomas, Fenouillet-Béranger, Claire, Cristoloveanu, Sorin, Galy, Philippe

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