A review of recent results on diamond vacuum lateral field emission device operation in radiation environments von Subramanian, K., Kang, W.P., Davidson, J.L., Ghosh, N., Galloway, K.F.

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Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes von Ball, D. R., Hutson, J. M., Javanainen, A., Lauenstein, J.-M., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Sierawski, B. D., Witulski, A. F., Reed, R. A., Schrimpf, R. D.

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Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs von Ball, D. R., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Hutson, J. M., Lauenstein, J.-M.

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Single-Event Gate Rupture Hardened Structure for High-Voltage Super-Junction Power MOSFETs von Muthuseenu, K., Barnaby, H. J., Galloway, K. F., Koziukov, A. E., Maksimenko, T. A., Vyrostkov, M. Y., Bu-Khasan, K. B., Kalashnikova, A. A., Privat, A.

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Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes von Cadena, R. M., Ball, D. R., Zhang, E. X., Islam, S., Senarath, A., McCurdy, M. W., Farzana, E., Speck, J. S., Karom, N., O'Hara, A., Tuttle, B. R., Pantelides, S. T., Witulski, A. F., Galloway, K. F., Alles, M. L., Reed, R. A., Fleetwood, D. M., Schrimpf, R. D.

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Digital Control for Radiation-Hardened Switching Converters in Space von Adell, P C, Witulski, A F, Schrimpf, R D, Baronti, F, Holman, W T, Galloway, K F

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Hydrogen Soaking, Displacement Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors von Li, Xingji, Yang, Jianqun, Fleetwood, Daniel M., Liu, Chaoming, Wei, Yidan, Barnaby, H. J., Galloway, K. F.

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Displacement Damage in Bipolar Junction Transistors: Beyond Messenger-Spratt von Barnaby, H. J., Schrimpf, R. D., Galloway, K. F., Li, X., Yang, J., Liu, C.

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Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors von Chen, D.K., Mamouni, F.E., Zhou, X.J., Schrimpf, R.D., Fleetwood, D.M., Galloway, K.F., Lee, S., Seo, H., Lucovsky, G., Jun, B., Cressler, J.D.

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Carbon nanotubes vacuum field emission differential amplifier integrated circuits von KANG, W. P, WONG, Y. M, DAVIDSON, J. L, KERNS, D. V, CHOI, B. K, HUANG, J. H, GALLOWAY, K. F

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Total dose effects in a linear Voltage regulator von Adell, P.C., Schrimpf, R.D., Holman, W.T., Todd, J.L., Caveriviere, S., Cizmarik, R.R., Galloway, K.F.

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Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics von Massengill, L.W., Choi, B.K., Fleetwood, D.M., Schrimpf, R.D., Galloway, K.F., Shaneyfelt, M.R., Meisenheimer, T.L., Dodd, P.E., Schwank, J.R., Lee, Y.M., Johnson, R.S., Lucovsky, G.

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Total-dose and single-event effects in switching DC/DC power converters von Adell, P.C., Schrimpf, R.D., Choi, B.K., Holman, W.T., Attwood, J.P., Cirba, C.R., Galloway, K.F.

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Total-dose and single-event effects in DC/DC converter control circuitry von Adell, P.C., Schrimpf, R.D., Holman, W.T., Boch, J., Stacey, J., Ribero, P., Sternberg, A., Galloway, K.F.

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Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation von Choi, B.K., Fleetwood, D.M., Schrimpf, R.D., Massengill, L.W., Galloway, K.F., Shaneyfelt, M.R., Meisenfieimer, T.L., Dodd, P.E., Schwank, J.R., Lee, Y.M., John, R.S., Lucovsky, G.

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Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures von Witczak, S.C., Schrimpf, R.D., Fleetwood, D.M., Galloway, K.F., Lacoe, R.C., Mayer, D.C., Puhl, J.M., Pease, R.L., Suehle, J.S.

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Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides von Arora, R., Rozen, J., Fleetwood, D.M., Galloway, K.F., Zhang, C.X., Jisheng Han, Dimitrijev, S., Kong, F., Feldman, L.C., Pantelides, S.T., Schrimpf, R.D.

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Nanodiamond Lateral VFEM Technology for Harsh Environments von Kang, W.P., Davidson, J.L., Subramanian, K., Choi, B.K., Galloway, K.F.

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Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs von Schmidt, D.M., Fleetwood, D.M., Schrimpf, R.D., Pease, R.L., Graves, R.J., Johnson, G.H., Galloway, K.F., Combs, W.E.

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Evaluation of SEGR threshold in power MOSFETs von Allenspach, M., Brews, J.R., Mouret, I., Schrimpf, R.D., Galloway, K.F.

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