Solid state dewetting application for In/ (0001) Sb2Te3 2D layered semiconductor nanosystem formation von Galiy, P.V., Nenchuk, T.M., Ciszewski, A., Mazur, P., Dzyuba, V.I., Makar, T.R., Tsvetkova, O.V.

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The anisotropic band structure of layered In4Se3(001) von Losovyj, Ya. B., Makinistian, L., Albanesi, E. A., Petukhov, A. G., Liu, Jing, Galiy, P., Dveriy, O. R., Dowben, P. A.

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The electronic structure of surface chains in the layered semiconductor In4Se3(100) von Losovyj, Ya. B., Klinke, Melanie, Cai, En, Rodriguez, Idaykis, Zhang, Jiandi, Makinistian, L., Petukhov, A. G., Albanesi, E. A., Galiy, P., Fiyala, Ya, Liu, Jing, Dowben, P. A.

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Order–disorder transition for corrugated Au layers von Fukutani, Keisuke, Lozova, N., Zuber, S.M., Dowben, P.A., Galiy, P., Losovyj, Yaroslav B.

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The bulk band structure and inner potential of layered In4Se3 von JING LIU, LOSOVYJ, Ya. B, KOMESU, Takashi, DOWBEN, P. A, MAKINISTIAN, L, ALBANESI, E. A, PETUKHOV, A. G, GALIY, P, FIYALA, Ya

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The interface microscopy and spectroscopy on the cleavage surfaces of the In4Se3 pure and copper-intercalated layered crystals von GALIY, P. V, MUSYANOVYCH, A. V, FIYALA, Ya. M

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Atomic force microscopy study of the cleavage surfaces of In4Se3 layered semiconductor crystal von GALIY, P. V, NENCHUK, T. M, DVERIY, O. R, CISZEWSKI, A, MAZUR, P, ZUBER, S

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Electronic energy structure of the (100) In4Se3 surfaces at different preparation and treatment in ultraviolet photoelectron spectroscopy study von Tuziak, O.Ya, Makar, T.R., Dzyuba, V.I., Nenchuk, T.M., Galiy, P.V.

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Self-assembled indium nanostructures formation on InSe (0001) surface von Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Buzhuk, Ya. M., Tsvetkova, O. V.

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The promise of anisotropic 2D materials: the Transition Metal Trichalcogenide (TMT) von Komesu, Takashi, Yi, H., Gilbert, S., Yost, A., Lipatov, A., Sinitskii, A., Losovyj, Ya, Galiy, P., Avila, J., Chen, C., Asensio, M., Dowben, P.

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Structural Aspect of Formation of a Nanosystem of In/In$_{4}$Se$_{3}$ (100) von Galiy, P. V., Mazur, P., Ciszewski, A., Nenchuk, T. M., Yarovets’, I. R., Dveriy, O. R.

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Indium Deposited Nanosystem Formation on InSe (0001) Surface Applied as Template von Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Buzhuk, Ya. M., Lubun, Z. M., Dveriy, O. R.

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The radiation defect accumulation in scintillative crystals of caesium halides under intense electron beam irradiation von Galiy, P.V.

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Ni$_x$InSe (0001) Metal–Semiconductor Heteronanosystem Study von Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Yarovets’, I. R., Dveriy, O. R.

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Excitonic ionizations of the electron centres in caesium iodide crystal and exoemission of electrons von Galiy, P.V., Mel’nyk, O.Ya, Tsvetkova, O.V.

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Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In4Se3 crystals von Galiy, P V, Musyanovych, A V, Nenchuk, T M

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Scanning Tunneling Microscopy/Spectroscopy and Low-Energy Electron Diffraction Investigations of GaTe Layered Crystal Cleavage Surface von Galiy, P., Nenchuk, T., Ciszewski, A., Mazur, P., Zuber, S., Yarovets’, I.

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Tunable two-dimensional electron gas at the surface of thermoelectric material In sub(4)Se sub(3) von Fukutani, K, Sato, T, Galiy, P V, Sugawara, K, Takahashi, T

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Tunable two-dimensional electron gas at the surface of thermoelectric material In 4 Se 3 von Fukutani, K., Sato, T., Galiy, P. V., Sugawara, K., Takahashi, T.

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7aAS-6 In_4Se_3表面上の2DEG状態の高分解能ARPES(7aAS 表面界面電子物性,領域9(表面・界面,結晶成長)) von 福谷, 圭祐, 宮田, 康成, 家城, 英, 松崎, 出愛, 佐藤, 宇史, 高橋, 隆

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