Effect of hydrogen on the stability of isovalently doped ZnSe crystals von Gal’chinetskii, L. P., Grinev, B. V., Starzhinskii, N. G., Dulfan, A. Ya, Ryzhikov, V. D.

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Behavior of new ZnSe(Te,O) semiconductor scintillators under high doses of ionizing radiation von Ryzhikov, V.D., Starzhinskiy, N.G., Gal'chinetskii, L.P., Guttormsen, M., Kist, A.A., Klamra, W.

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Properties of semiconductor scintillators and combined detectors of ionizing radiation based on ZnSe(Te,O)/pZnTe–nCdSe structures von Focsha, A.A, Gashin, P.A, Ryzhikov, V.D, Starzhinskiy, N.G, Gal'chinetskii, L.P, Silin, V.I

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Structure defects and phase transition in tellurium-doped ZnSe crystals von Atroshchenko, L.V., Gal'chinetskii, L.P., Galkin, S.N., Ryzhikov, V.D., Silin, V.I.

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Distribution of tellurium in melt-grown ZnSe(Te) crystals von Atroshchenko, L.V, Gal'chinetskii, L.P, Galkin, S.N, Ryzhikov, V.D, Silin, V.I, Shevtsov, N.I

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Thermodynamics of chemical interactions in the CdTe-ZnTe-O2-C system during melt growth of Cd1-xZnxTe crystals von ATROSHCHENKO, L. V, GALKIN, S. N, GAL'CHINETSKII, L. P, RYBALKA, I. A, RYZHIKOV, V. D

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Structural perfection and mechanical properties of ZnSe1−xTex crystals grown by the Bridgman technique von Atroshchenko, L.W, Gal'chinetskii, L.P, Galkin, S.N, Ryzhikov, V.D, Shevtsov, N.I, Silin, V.I

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Chemical Interaction in the ZnSe-ZnTe-Se-H2-C System von Gal'chinetskii, L. P., Galkin, S. N., Ryzhikov, V. D., Rybalka, I. A., Voronkin, E. F., Lalayants, A. I., Starzhinskii, N. G., Silin, V. I.

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Thermodynamics of chemical interactions in the CdTe-ZnTe-O2-C system during melt growth of Cd1-x-xZnxTe crystals von Atroshchenko, L V, Galkin, S N, Gal'chinetskii, L P, Rybalka, I A, Ryzhikov, V D

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The role of oxygen in formation of radiative recombination centers in ZnSe1−xTex crystals von Ryzhikov, V.D, Starzhinskiy, N.G, Gal’chinetskii, L.P, Silin, V.I, Tamulaitis, G, Lisetskaya, E.K

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Determination of the conversion efficiency of X-ray luminophores when measuring the intensity of ionizing radiation von Gal’chinetskii, L. P., Zelenskaya, O. N., Katrunov, K. A., Ryzhikov, V. D.

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Small-grained detector of ionizing radiation based on ZnSe(Te) von Volkov, V.G.

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Structural perfection and mechanical properties of ZnSe1-xTex crystals grown by the Bridgman technique von ATROSHCHENKO, L. W, GAL'CHINETSKII, L. P, GALKIN, S. N, RYZHIKOV, V. D, SHEVTSOV, N. I, SILIN, V. I

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Crystals Cd(1-x)Zn(x)Te: A promising material for non-cryogenic semiconductor detectors - Preparations, structure defectness and electrophysical properties von Atroshchenko, L V, Galkin, S N, Gal'chinetskii, L P, Lalayants, A I, Rybalka, I A, Ryzhikov, V D, Silin, V I, Starzhinskii, N G

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Radiation stability of optical transmission of Ga2Se3 crystals in IR region of spectrum von Gal'chinetskii, L. P., Katrunov, K. A., Koshkin, V. M., Kulik, V. N.

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Role of oxygen in the luminescence of crystalline Zn(sete) von Morozova, H. K., Nazarova, L. D., Karetnikov, I. A., Gal'chinetskii, L. P., Ryzhikov, V. D., Golovanova, O. R.

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Ionizing radiation detectors based on radiation-stable crystalline semiconductors of the In2Te3 type von Koshkin, V. M., Gal'chinetskii, L. P., Kulik, V. N., Gusev, G. K., Ulmanis, U. A.

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Luminescence of ZnSe·Te crystals grown from a melt von Gal'chinetskii, L. P., Karetnikov, I. A., Mashchenko, V. E., Morozova, N. K., Nazarova, L. D., Ryzhikov, V. D.

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X-Ray Multi-Energy Introscopy Systems with New Semiconductor Scintillators von Ryzhikov, V. D, Starzhinskiy, N. G, Naydenov, S. V, Lisetskaya, E. K, Gal'chinetskii, L. P, Silin, V. I

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X-Ray Multi-Energy Introscopy Systems with New Semiconductor Scintillators von Ryzhikov, V D, Starzhinskiy, N G, Naydenov, S V, Lisetskaya, E K, Gal'chinetskii, L P, Silin, V I

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