Enhancement of monolayer SnSe light absorption by strain engineering: A DFT calculation von Vu, Tuan V., Tong, Hien D., Nguyen, Truong Khang, Nguyen, Chuong V., Lavrentyev, A.A., Khyzhun, O.Y., Gabrelian, B.V., Luong, Hai L., Pham, Khang D., Dang, Phuc Toan, Vo, Dat D.

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A theoretical and experimental study of the valence-band electronic structure and optical constants of quaternary copper mercury tin sulfide, Cu2HgSnS4, a potential material for op... von Vu, Tuan V., Lavrentyev, A.A., Gabrelian, B.V., Tong, Hien D., Tkach, V.A., Parasyuk, O.V., Khyzhun, O.Y.

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Electronic structure and optical properties of Ag2HgSnSe4: First-principles DFT calculations and X-ray spectroscopy studies von Vu, Tuan V., Lavrentyev, A.A., Gabrelian, B.V., Parasyuk, O.V., Ocheretova, V.A., Khyzhun, O.Y.

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Particular features of the electronic structure and optical properties of Ag2PbGeS4 as evidenced from first-principles DFT calculations and XPS studies von Vu, Tuan V., Lavrentyev, A.A., Gabrelian, B.V., Ocheretova, V.A., Parasyuk, O.V., Khyzhun, O.Y.

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Electronic structure and optical constants of CsPbCl3: The effect of approaches within ab initio calculations in relation to X-ray spectroscopy experiments von Vu, Tuan V., Lavrentyev, A.A., Gabrelian, B.V., Pham, Khang D., Parasyuk, O.V., Denysyuk, N.M., Khyzhun, O.Y.

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Highly anisotropic layered crystal AgBiP2Se6: Growth, electronic band-structure and optical properties von Vu, Tuan V., Khyzhun, O.Y., Lavrentyev, A.A., Gabrelian, B.V., Sabov, V.I., Sabov, M.Y., Filep, M.Y., Pogodin, A.I., Barchiy, I.E., Fedorchuk, A.O., Andriyevsky, B., Piasecki, M.

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DFT study and XPS measurements elucidating the electronic and optical properties of KPb2Cl5 von Vu, Tuan V., Lavrentyev, A.A., Gabrelian, B.V., Vo, Dat D., Pham, Khang D., Denysyuk, N.M., Isaenko, L.I., Tarasova, A.Y., Khyzhun, O.Y.

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TlSbP2Se6 - a new layered single crystal: growth, structure and electronic properties von Vu, Tuan V., Lavrentyev, A.A., Gabrelian, B.V., Sabov, V.I., Sabov, M.Y., Pogodin, A.I., Barchiy, I.E., Fedorchuk, A.O., Balinska, A., Bak, Z., Khyzhun, O.Y., Piasecki, M.

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First-principles DFT calculations of the electronic structure and optical properties of TlInGe2Se6, a prospective NLO material von Vu, Tuan V., Lavrentyev, A.A., Gabrelian, B.V., Parasyuk, O.V., Khyzhun, O.Y.

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Quaternary Tl2CdGeSe4 selenide: Electronic structure and optical properties of a novel semiconductor for potential application in optoelectronics von Vu, Tuan V., Lavrentyev, A.A., Gabrelian, B.V., Selezen, A.O., Piskach, L.V., Olekseyuk, Ivan D., Myronchuk, G.L., Denysyuk, M., Tkach, V.A., Hieu, Nguyen N., Pham, Khang D., Khyzhun, O.Y.

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Exploring particular electronic and optical properties of Tl2HgSnSe4, promising chalcogenide for solar photovoltaics and optoelectronics: A complex experimental and theoretical stu... von Khyzhun, O.Y., Vu, Tuan V., Myronchuk, G.L., Denysyuk, M., Piskach, L.V., Selezen, A.O., Lavrentyev, A.A., Gabrelian, B.V., Fedorchuk, A.O., Tkach, V.A., Petrovska, S.S., Piasecki, M.

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First-principles computation of the electronic structure and optical properties of Tl3PbBr5 and TlPb2Br5: Application of the TB-mBJ+U+SOC technique von Khyzhun, O.Y., Vu, Tuan V., Gabrelian, B.V., Lavrentyev, A.A., Kalmykova, K.F., Ananchenko, L.N., Denysyuk, N.M., Bragiel, P., Piasecki, M.

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Environmentally safe layered crystal produced from hazardous chemical elements: TlPb2BrI4, a new promising detector material von Khyzhun, O.Y., Vu, Tuan V., Parasyuk, O.V., Fedorchuk, A.O., Fochuk, P.M., Lavrentyev, A.A., Gabrelian, B.V., Levchuk, Ievgen, Matt, Gebhard J., Tedde, Sandro F., Schmidt, Oliver, Shrestha, Shreetu, Brabec, Christoph J., Kityk, I.V., Piasecki, M.

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Crystal growth, electronic and optical properties of Tl2CdSnSe4, a recently discovered prospective semiconductor for application in thin film solar cells and optoelectronics von Vu, Tuan V., Lavrentyev, A.A., Gabrelian, B.V., Selezen, A.O., Piskach, L.V., Myronchuk, G.L., Denysyuk, M., Tkach, V.A., Pham, Khang D., Khyzhun, O.Y.

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Electronic and optical properties of wide band gap Tl3TaS4: A promising surface acoustic wave material von Vu, Tuan V., Lavrentyev, A.A., Gabrelian, B.V., Kalmykova, K.F., Sidorkin, V.V., Hoat, D.M., Tong, Hien D., Tran, Duy Phu, Khyzhun, O.Y., Vo, Dat D.

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Simulation within a DFT framework and experimental study of the valence-band electronic structure and optical properties of quaternary selenide Cu2HgSnSe4 von Vu, Tuan V., Lavrentyev, A.A., Gabrelian, B.V., Tong, Hien D., Tkach, V.A., Parasyuk, O.V., Khyzhun, O.Y.

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Electronic and optical properties of quaternary sulfide Tl2HgSnS4, a promising optoelectronic semiconductor: A combined experimental and theoretical study von Lavrentyev, A.A., Gabrelian, B.V., Vu, Tuan V., Ananchenko, L.N., Myronchuk, G.L., Parasyuk, O.V., Tkach, V.A., Kopylova, K.I., Khyzhun, O.Y.

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Electronic structure and optical properties of LiGa0.5In0.5Se2 single crystal, a nonlinear optical mid-IR material von Lavrentyev, A.A., Gabrelian, B.V., Vu, Tuan V., Isaenko, L.I., Yelisseyev, A.P., Khyzhun, O.Y.

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Electronic structure and optical properties of noncentrosymmetric LiGaSe2: Experimental measurements and DFT band structure calculations von Lavrentyev, A.A., Gabrelian, B.V., Vu, V.T., Ananchenko, L.N., Isaenko, L.I., Yelisseyev, A.P., Khyzhun, O.Y.

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Electronic structure and optical properties of RbPb2Br5 von Lavrentyev, A.A., Gabrelian, B.V., Vu, V.T., Denysyuk, N.M., Shkumat, P.N., Tarasova, A.Y., Isaenko, L.I., Khyzhun, O.Y.

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