Freestanding graphene writing on a silicon carbide wafer von Kim, E.H., Park, J.H., Khadk, I.B., Son, J., Kim, H.W., Lee, D.H., Kim, B.J., Sung, D.I., Woo, S.H., Yeom, G.Y., Park, S.H., Ahn, J.R.

Volltext

Effect of oxide films, inclusions and Fe on reproducibility of tensile properties in cast Al–Si–Mg alloys: Statistical and image analysis von Eisaabadi B, G., Davami, P., Kim, S.K., Varahram, N., Yoon, Y.O., Yeom, G.Y.

Volltext

Atomic layer etching of Al2O3 using BCl3/Ar for the interface passivation layer of III–V MOS devices von Min, K.S., Kang, S.H., Kim, J.K., Jhon, Y.I., Jhon, M.S., Yeom, G.Y.

Volltext

Characteristics of SiO2 etching by using pulse-time modulation in 60 MHz/2 MHz dual-frequency capacitive coupled plasma von Jeon, M.H., Mishra, A.K., Kang, S.-K., Kim, K.N., Kim, I.J., Lee, S.B., Sin, T.H., Yeom, G.Y.

Volltext

Interfacial electronic structure of molybdenum oxide on the fullerene layer, a potential hole-injecting layer in inverted top-emitting organic light-emitting diodes von Lim, J.T., Park, J.W., Yeom, G.Y.

Volltext

Characteristics of SiOx thin films deposited by atmospheric pressure chemical vapor deposition as a function of HMDS/O2 flow rate von GIL, Elly, PARK, J. B, OH, J. S, YEOM, G. Y

Volltext

White top-emitting organic light-emitting diodes using one-emissive layer of the DCJTB doped DPVBi layer von Kim, M.S., Jeong, C.H., Lim, J.T., Yeom, G.Y.

Volltext

Atmospheric pressure PECVD of SiO2 thin film at a low temperature using HMDS/O2/He/Ar von KIM, Y. S, LEE, J. H, LIM, J. T, PARK, J. B, YEOM, G. Y

Volltext

Top-emitting organic light-emitting diode using transparent conducting indium oxide layer fabricated by a two-step ion beam-assisted deposition von Lim, J.T., Jeong, C.H., Vozny, A., Lee, J.H., Kim, M.S., Yeom, G.Y.

Volltext

A study of transparent indium tin oxide (ITO) contact to p-GaN von Kim, D.W., Sung, Y.J., Park, J.W., Yeom, G.Y.

Volltext

Effect of the surface texturing shapes fabricated using dry etching on the extraction efficiency of vertical light-emitting diodes von Lee, H.C., Park, J.B., Bae, J.W., Thuy, Pham Thi Thu, Yoo, M.C., Yeom, G.Y.

Volltext

The study of atmospheric pressure plasma for surface cleaning von Yi, C.H., Lee, Y.H., Yeom, G.Y.

Volltext

White organic light-emitting diodes from three emitter layers von Kim, M.S., Lim, J.T., Jeong, C.H., Lee, J.H., Yeom, G.Y.

Volltext

Four-wavelength white organic light-emitting diodes using 4,4′-bis-[carbazoyl-(9)]-stilbene as a deep blue emissive layer von Jeong, C.H., Lim, J.T., Kim, M.S., Lee, J.H., Bae, J.W., Yeom, G.Y.

Volltext

Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for water vapor diffusion barrier von LEE, J. H, JEONG, C. H, KIM, H. B, LIM, J. T, KYUNG, S. J, YEOM, G. Y

Volltext

Fabrication of SiC micro-lens by plasma etching von Lee, H.Y., Kim, D.W., Sung, Y.J., Yeom, G.Y.

Volltext

High rate sapphire (Al 2O 3) etching in inductively coupled plasmas using axial external magnetic field von Kim, D.W., Jeong, C.H., Kim, K.N., Lee, H.Y., Kim, H.S., Sung, Y.J., Yeom, G.Y.

Volltext

Development of a low angle forward reflected neutral oxygen beam for materials processing von Lee, D.H., Bae, J.W., Park, S.D., Yeom, G.Y.

Volltext

High rate etching of 6H–SiC in SF6-based magnetically-enhanced inductively coupled plasmas von Kim, D.W., Lee, H.Y., Park, B.J., Kim, H.S., Sung, Y.J., Chae, S.H., Ko, Y.W., Yeom, G.Y.

Volltext

The effect of solution treatment time on the tensile deformation characteristics of naturally-aged A383 alloy die castings von Eisaabadi B., Ghasem, Tiryakioğlu, Murat, Yeom, G.Y., Netto, Nelson, Beygi, R., Mehrizi, M.Z., Kim, S.K.

Volltext