Attacks on Mobile Phones Using SMS-Spam von G. A. Evropeytsev, M. I. Froimson, G. A. Urvanov

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Investigation of the Spectrum of Exciton Excited States in Self-Organized InAs/AlGaAs Quantum Dots von Galimov, A., Rakhlin, M., Belyaev, K., Klimko, G., Evropeytsev, E., Toropov, A.

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AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm von Toropov, A. A., Shevchenko, E. A., Shubina, T. V., Jmerik, V. N., Nechaev, D. V., Evropeytsev, E. A., Kaibyshev, V. Kh, Pozina, G., Rouvimov, S., Ivanov, S. V.

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Suppression of slow decaying emission in II-VI quantum dots with Förster resonance energy transfer von Mikhailov, T N, Evropeytsev, E A, Belyaev, K G, Kaibyshev, V H, Toropov, A A, Rodina, A V, Ivanov, S V, Pozina, G, Shubina, T V

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Four-junction heterovalent solar cells based on II-VI/III-V/Ge coherent and metamorphic heterostructures von Toropov, A. A., Evropeytsev, E. A., Sorokin, S. V., Klimko, G. V., Gronin, S. V., Sedova, I. V., Kalinovskii, V. S., Kontrosh, E. V., Usikova, A. A., Il'inskaya, N. D., Ivanov, S. V.

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Coexistence of type-I and type-II band line-ups in 1-2 monolayer thick GaN/AlN single quantum wells von Evropeytsev, E A, Jmerik, V N, Nechaev, D V, Rouvimov, S, Shubina, T V, Kaibyshev, V Kh, Pozina, G, Ivanov, S V, Toropov, A A

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Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells von Blokhin, S. A., Bobrov, M. A., Blokhin, A. A., Kuzmenkov, A. G., Vasil’ev, A. P., Zadiranov, Yu. M., Evropeytsev, E. A., Sakharov, A. V., Ledentsov, N. N., Karachinsky, L. Ya, Ospennikov, A. M., Maleev, N. A., Ustinov, V. M.

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Structural properties and vertical transport in ZnSe/CdSe superlattices grown on an In0.3Ga0.7As metamorphic buffer layer von Evropeytsev, E. A., Sorokin, S. V., Klimko, G. V., Gronin, S. V., Sedova, I. V., Belyaev, K. G., Ivanov, S. V., Pozina, G., Toropov, A. A.

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CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy von Gronin, S.V., Sorokin, S.V., Kazanov, D.R., Sedova, I.V., Klimko, G.V., Evropeytsev, E.A., Ivanov, S.V.

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Optical and Structural Properties of GaAs/AlGaAs Quantum Wells Grown by MBE in the Vicinity of As-Rich-GaAs/ZnSe Heterovalent Interface von Klimko, G.V., Evropeytsev, E.A., Sitnikova, A.A., Gronin, S.V., Sedova, I.V., Sorokin, S.V., Ivanov, S.V.

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Four-junction heterovalent solar cells based on II-VI/III-V/Ge coherent and metamorphic heterostructures: Four-junction heterovalent solar cells von Toropov, A. A., Evropeytsev, E. A., Sorokin, S. V., Klimko, G. V., Gronin, S. V., Sedova, I. V., Kalinovskii, V. S., Kontrosh, E. V., Usikova, A. A., Il'inskaya, N. D., Ivanov, S. V.

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Structural properties and vertical transport in ZnSe/CdSe superlattices grown on an In sub(0.3)Ga sub(0.7)As metamorphic buffer layer von Evropeytsev, E A, Sorokin, S V, Klimko, G V, Gronin, S V, Sedova, I V, Belyaev, K G, Ivanov, S V, Pozina, G, Toropov, A A

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Structural properties and vertical transport in ZnSe/CdSe superlattices grown on an In 0.3 Ga 0.7 As metamorphic buffer layer von Evropeytsev, E. A., Sorokin, S. V., Klimko, G. V., Gronin, S. V., Sedova, I. V., Belyaev, K. G., Ivanov, S. V., Pozina, G., Toropov, A. A.

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Optical studies of carriers’ vertical transport in the alternately-strained ZnS0.4Se0.6/CdSe superlattice von Evropeytsev, E. A., Sorokin, S. V., Gronin, S. V., Sedova, I. V., Klimko, G. V., Ivanov, S. V., Toropov, A. A.

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Optical studies of carriers’ vertical transport in the alternately-strained ZnS{sub 0.4}Se{sub 0.6}/CdSe superlattice von Evropeytsev, E. A., Sorokin, S. V., Gronin, S. V., Sedova, I. V., Klimko, G. V., Ivanov, S. V., Toropov, A. A.

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Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel von Evropeytsev, E. A., Klimko, G. V., Komissarova, T. A., Sedova, I. V., Sorokin, S. V., Gronin, S. V., Kazantsev, D. Yu, Ber, B. Ya, Ivanov, S. V., Toropov, A. A.

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