Automotive IC reliability: Elements of the battle towards zero defects von Kuper, Fred G.

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MOSFET Degradation Under RF Stress von Sasse, G.T., Kuper, F.G., Schmitz, J.

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Impact of particles in ultra pure water on random yield loss in IC production von Wali, Faisal, Knotter, D. Martin, Mud, Auke, Kuper, Fred G.

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RF CMOS reliability simulations von Sasse, Guido T., Acar, Mustafa, Kuper, Fred G., Schmitz, Jurriaan

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Current Degradation of a-Si:H/SiN TFTs at Room Temperature and Low Voltages von Merticaru, A.R., Mouthaan, A.J., Kuper, F.G.

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Analysis of the electrical breakdown in hydrogenated amorphous silicon thin-film transistors von Golo, N.T., Kuper, F.G., Mouthaan, T.J.

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Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels –An explanation and die protection strategy von Sowariraj, M.S.B., Smedes, Theo, Salm, Cora, Mouthaan, Ton, Kuper, Fred G

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Estimation of the impact of electrostatic discharge on density of states in hydrogenated amorphous silicon thin-film transistors von Golo, Natasa Tosic, van der Wal, Siebrigje, Kuper, Fred G., Mouthaan, Ton

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A 3-D Circuit Model to evaluate CDM performance of ICs von Sowariraj, M.S.B., Smedes, Theo, de Jong, Peter C., Salm, Cora, Mouthaan, Ton, Kuper, Fred G

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Relation between yield and reliability of integrated circuits and application to failure rate assessment and reduction in the one digit FIT and PPM reliability ERA von Van Der Pol, Jacob A., Kuper, Fred G., Ooms, Eric R.

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Plasma-charging damage of floating MIM capacitors von Zhichun Wang, Ackaert, J., Salm, C., Kuper, F.G., Tack, M., De Backer, E., Coppens, P., Luc De Schepper, Vlachakis, B.

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The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress von Sowariraj, M.S.B., Salm, Cora, Mouthaan, Ton, G Kuper, Fred, Smedes, Theo

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Significance of including substrate capacitance in the full chip circuit model of ICs under CDM stress von Sowariraj, M.S.B., de Jong, P.C., Cora, S.M., Smedes, T., Mouthaan, A.J.T., Kuper, F.G.

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Impact of screening of latent defects at electrical test on the yield-reliability relation and application to burn-in elimination von Van der Pol, J.A., Ooms, E.R., Van 't Hof, T., Kuper, F.G.

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Fast thermal cycling-enhanced electromigration in power metallization von Nguyen, H.V., Salm, C., Krabbenborg, B.H., Bisschop, J., Mouthaan, A.J.T., Kuper, F.G.

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Applying the fWLR concept to Stress induced leakage current in non-volatile memory processes von Tao, Guoqiao, Scarpa, Andrea, van Marwijk, Leo, van Dijk, Kitty, Kuper, Fred

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Investigations on double-diffused MOS transistors under ESD zap conditions von Boselli, Gianluca, Meeuwsen, Stan, Mouthaan, Ton, Kuper, Fred

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Rise-time effects in grounded gate nMOS transistors under transmission line pulse stress von Boselli, Gianluca, Mouthaan, Ton, Kuper, Fred

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Using an SCR as ESD protection without latch-up danger von Notermans, Guido, Kuper, Fred, Luchies, Jan-Marc

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The effect of silicide on ESD performance of transistors von Notermans, Guido, Heringa, Anco, van Dort, Maarten, Jansen, Sander, Kuper, Fred

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