Anion photoelectron spectroscopy of I2−(CO2)n(n=1–8) clusters von Gómez, Harry, Taylor, Travis R., Neumark, Daniel M.

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Anion photoelectron spectroscopy of solvated transition state precursors von Gómez, Harry, Meloni, Giovanni, Madrid, James, Neumark, Daniel M.

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Photoelectron spectroscopy of clustered transition state precursors IHI −·Ar and BrHI −·Ar von Liu, Zhuan, Gómez, Harry, Neumark, Daniel M

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Análisis del efecto del polvo de roca en el almacenamiento de carbono y las variables fisicoquímicas del suelo en manglares de Guayaquil, Ecuador von Veintimilla Gómez, Harry Enrique, Molina-Moreira, Natalia

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Anion Photoelectron Spectroscopy of Aluminum Phosphide Clusters von Gómez, Harry, Taylor, Travis R, Neumark, Daniel M

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Photoelectron spectroscopy of GaX2−, Ga2X−, Ga2X2−, and Ga2X3−(X=P,As) von Taylor, Travis R., Gómez, Harry, Asmis, Knut R., Neumark, Daniel M.

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Spectroscopy of the low-lying states of the group III–V diatomics, AlP, GaP, InP, and GaAs via anion photodetachment spectroscopy von Gómez, Harry, Taylor, Travis R., Zhao, Yuexing, Neumark, Daniel M.

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Transition state spectroscopy of the I + HI reaction in clusters: photoelectron spectroscopy of IHI-.Arn (n = 1-15) von Liu, Z, Gómez, H, Neumark, D M

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Photoelectron spectroscopy of ClH2− and ClD2−: A probe of the Cl+H2 van der Waals well and spin–orbit excited states von Ferguson, Michael J., Meloni, Giovanni, Gomez, Harry, Neumark, Daniel M.

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GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME von GOMEZ, Harry, PETHE, Abhijit Jayant, BOHR, Mark, CAPPELLANI, Annalisa, WEBB, Clair, GHANI, Tahir

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Probing the connection between cluster and bulk electronic structure of InP using vacuum ultraviolet anion photoelectron spectroscopy von Meloni, Giovanni, Ferguson, Michael J, Sheehan, Sean M, Gomez, Harry, Liu, Zhuan, Neumark, Daniel M

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GATE CONTACT STRUCTURE OVER ACTIVE GATE von GOMEZ, Harry, PETHE, Abhijit Jayant, BOHR, Mark, WEBB, Clair, GHANI, Tahir

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GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME von GOMEZ, Harry, CAPELLANI, Annalisa, PETHE, Abhijit Jayant, BOHR, Mark, WEBB, Clair, GHANI, Tahir

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METHOD OF MANUFACTURING STRAINED GATE-ALL-AROUND SEMICONDUCTOR DEVICES FORMED ON LOCALLY ISOLATED SUBSTRATES von GOMEZ, Harry, PETHE, Abhijit Jayant, CAPPELLANI, Annalisa, GHANI, Tahir

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GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME von GOMEZ, Harry, PETHE, Abhijit Jayant, BOHR, Mark, CAPPELLANI, Annalisa, WEBB, Clair, GHANI, Tahir

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Gate contact structure over active gate and method to fabricate same von Pethe, Abhijit Jayant, Bohr, Mark, Cappellani, Annalisa, Ghani, Tahir, Webb, Clair, Gomez, Harry

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STRAINED GATE-ALL-AROUND SEMICONDUCTOR DEVICES FORMED ON GLOBALLY OR LOCALLY ISOLATED SUBSTRATES von GOMEZ, Harry, PETHE, Abhijit Jayant, CAPPELLANI, Annalisa, GHANI, Tahir

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Gate-all-around (GAA) transistor with stacked nanowires on locally isolated substrate von Pethe, Abhijit Jayant, Cappellani, Annalisa, Ghani, Tahir, Gomez, Harry

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Isolated and bulk semiconductor devices formed on a same bulk substrate von Cappellani, Annalisa, Rios, Rafael, Gomez, Harry, Kuhn, Kelin J

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Method of forming a multi-gate transistor von GOMEZ, Harry, SHEN, Kuan-Yueh, CAPPELLANI, Annalisa, MURTHY, Anand S, GHANI, Tahir

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