A single-hole spin qubit von Hendrickx, N. W., Lawrie, W. I. L., Petit, L., Sammak, A., Scappucci, G., Veldhorst, M.

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Strong spin-photon coupling in silicon von Samkharadze, N, Zheng, G, Kalhor, N, Brousse, D, Sammak, A, Mendes, U C, Blais, A, Scappucci, G, Vandersypen, L M K

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Fast two-qubit logic with holes in germanium von Hendrickx, N. W., Franke, D. P., Sammak, A., Scappucci, G., Veldhorst, M.

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Quantum dot arrays in silicon and germanium von Lawrie, W. I. L., Eenink, H. G. J., Hendrickx, N. W., Boter, J. M., Petit, L., Amitonov, S. V., Lodari, M., Paquelet Wuetz, B., Volk, C., Philips, S. G. J., Droulers, G., Kalhor, N., van Riggelen, F., Brousse, D., Sammak, A., Vandersypen, L. M. K., Scappucci, G., Veldhorst, M.

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Gate-controlled quantum dots and superconductivity in planar germanium von Hendrickx, N. W., Franke, D. P., Sammak, A., Kouwenhoven, M., Sabbagh, D., Yeoh, L., Li, R., Tagliaferri, M. L. V., Virgilio, M., Capellini, G., Scappucci, G., Veldhorst, M.

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Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold von Lawrie, W. I. L., Rimbach-Russ, M., Riggelen, F. van, Hendrickx, N. W., Snoo, S. L. de, Sammak, A., Scappucci, G., Helsen, J., Veldhorst, M.

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Lightly strained germanium quantum wells with hole mobility exceeding one million von Lodari, M., Kong, O., Rendell, M., Tosato, A., Sammak, A., Veldhorst, M., Hamilton, A. R., Scappucci, G.

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A two-dimensional array of single-hole quantum dots von van Riggelen, F., Hendrickx, N. W., Lawrie, W. I. L., Russ, M., Sammak, A., Scappucci, G., Veldhorst, M.

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Crystalline materials for quantum computing: Semiconductor heterostructures and topological insulators exemplars von Scappucci, G., Taylor, P. J., Williams, J. R., Ginley, T., Law, S.

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Spin Relaxation Benchmarks and Individual Qubit Addressability for Holes in Quantum Dots von Lawrie, W. I. L, Hendrickx, N. W, van Riggelen, F, Russ, M, Petit, L, Sammak, A, Scappucci, G, Veldhorst, M

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Qubits made by advanced semiconductor manufacturing von Zwerver, A. M. J., Krähenmann, T., Watson, T. F., Lampert, L., George, H. C., Pillarisetty, R., Bojarski, S. A., Amin, P., Amitonov, S. V., Boter, J. M., Caudillo, R., Correas-Serrano, D., Dehollain, J. P., Droulers, G., Henry, E. M., Kotlyar, R., Lodari, M., Lüthi, F., Michalak, D. J., Mueller, B. K., Neyens, S., Roberts, J., Samkharadze, N., Zheng, G., Zietz, O. K., Scappucci, G., Veldhorst, M., Vandersypen, L. M. K., Clarke, J. S.

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Valley Splitting in Silicon from the Interference Pattern of Quantum Oscillations von Lodari, M, Lampert, L, Zietz, O, Pillarisetty, R, Clarke, J S, Scappucci, G

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Phase flip code with semiconductor spin qubits von van Riggelen, F., Lawrie, W. I. L., Russ, M., Hendrickx, N. W., Sammak, A., Rispler, M., Terhal, B. M., Scappucci, G., Veldhorst, M.

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A 2D quantum dot array in planar 28Si/SiGe von Unseld, F. K., Meyer, M., Mądzik, M. T., Borsoi, F., de Snoo, S. L., Amitonov, S. V., Sammak, A., Scappucci, G., Veldhorst, M., Vandersypen, L. M. K.

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Light effective hole mass in undoped Ge/SiGe quantum wells von Lodari, M., Tosato, A., Sabbagh, D., Schubert, M. A., Capellini, G., Sammak, A., Veldhorst, M., Scappucci, G.

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On-chip integration of Si/SiGe-based quantum dots and switched-capacitor circuits von Xu, Y., Unseld, F. K., Corna, A., Zwerver, A. M. J., Sammak, A., Brousse, D., Samkharadze, N., Amitonov, S. V., Veldhorst, M., Scappucci, G., Ishihara, R., Vandersypen, L. M. K.

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A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium von Scappucci, G, Capellini, G, Johnston, B, Klesse, W. M, Miwa, J. A, Simmons, M. Y

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Low resistivity, super-saturation phosphorus-in-silicon monolayer doping von McKibbin, S. R., Polley, C. M., Scappucci, G., Keizer, J. G., Simmons, M. Y.

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A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature von Bavdaz, P. L., Eenink, H. G. J., van Staveren, J., Lodari, M., Almudever, C. G., Clarke, J. S., Sebasatiano, F., Veldhorst, M., Scappucci, G.

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Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers von Shamim, Saquib, Mahapatra, S., Scappucci, G., Klesse, W. M., Simmons, M. Y., Ghosh, Arindam

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