Efficacy of percutaneous endoscopic gastro‐jejunostomy (PEG‐J) decompression therapy for patients with chronic intestinal pseudo‐obstruction (CIPO) von Ohkubo, H., Fuyuki, A., Arimoto, J., Higurashi, T., Nonaka, T., Inoh, Y., Iida, H., Inamori, M., Kaneda, T., Nakajima, A.

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Prognosis of conventional vs. high-frequency ventilation for congenital diaphragmatic hernia: a retrospective cohort study von Fuyuki, Makiko, Usui, Noriaki, Taguchi, Tomoaki, Hayakawa, Masahiro, Masumoto, Kouji, Kanamori, Yutaka, Amari, Shoichiro, Yamoto, Masaya, Urushihara, Naoto, Inamura, Noboru, Yokoi, Akiko, Okawada, Manabu, Okazaki, Tadaharu, Toyoshima, Katsuaki, Furukawa, Taizou, Terui, Keita, Ohfuji, Satoko, Tazuke, Yuko, Uchida, Keiichi, Okuyama, Hiroomi

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Invasive Haemophilus influenzae disease among adults in Japan during 2014–2018 von Hachisu, Yushi, Tamura, Kosuke, Murakami, Koichi, Fujita, Jiro, Watanabe, Hiroshi, Tanabe, Yoshinari, Kuronuma, Koji, Kubota, Tetsuya, Oshima, Kengo, Maruyama, Takaya, Kasahara, Kei, Nishi, Junichiro, Abe, Shuichi, Nakamura, Masahiko, Kubota, Mayumi, Hirai, Shinichiro, Ishioka, Taisei, Ikenoue, Chiaki, Fukusumi, Munehisa, Sunagawa, Tomimasa, Suzuki, Motoi, Akeda, Yukihiro, Oishi, Kazunori

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100 mm 4HN-SiC Wafers with Zero Micropipe Density von Tsvetkov, Valeri F., Zilli, R., Leonard, R.T., Khlebnikov, I., Paisley, Michael J., Malta, D.P., Powell, Adrian R., Carter Jr, Calvin H., Jenny, Jason R., Hobgood, H.McD, Basceri, C., Brady, M.F., Khlebnikov, Y., Balakrishna, Vijay, Deyneka, E.

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Recent air temperature changes in the permafrost landscapes of northeastern Eurasia von Fedorov, A.N., Ivanova, R.N., Park, H., Hiyama, T., Iijima, Y.

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Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability von Green, Ronald, Habersat, Daniel B., Lelis, Aivars J., Goldsman, Neil

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The safety, efficacy and predictors for HbA1c reduction of sitagliptin in the treatment of Japanese type 2 diabetes von Maeda, Hajime, Kubota, Akira, Tanaka, Yasushi, Terauchi, Yasuo, Matsuba, Ikuro

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Geocryological characteristics of the upper permafrost in a tundra-forest transition of the Indigirka River Valley, Russia von Iwahana, Go, Takano, Shinya, Petrov, Roman E., Tei, Shunsuke, Shingubara, Ryo, Maximov, Trofim C., Fedorov, Alexander N., Desyatkin, Alexey R., Nikolaev, Anatoly N., Desyatkin, Roman V., Sugimoto, Atsuko

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Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces von Ishida, Yuuki, Takahashi, Tetsuo, Arai, Kazuo, Okumura, Hajime, Yoshida, Sadafumi

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A Geographically Widespread Outbreak Investigation and Development of a Rapid Screening Method Using Whole Genome Sequences of Enterohemorrhagic Escherichia coli O121 von Lee, Ken-Ichi, Morita-Ishihara, Tomoko, Iyoda, Sunao, Ogura, Yoshitoshi, Hayashi, Tetsuya, Sekizuka, Tsuyoshi, Kuroda, Makoto, Ohnishi, Makoto

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Characterization of Electric Discharge Machining for Silicon Carbide Single Crystal von Yamaguchi, Satarou, Noro, Toshiya, Arai, Kazuo, Takahashi, Hideaki, Kato, Tomohisa

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Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers von Hull, Brett A., Zhang, Q. Jon, Tsvetkov, Valeri F., Hefner, A., Paisley, Michael J., O'Loughlin, Michael J., Sumakeris, Joseph J., Rivera, Angel, Powell, Adrian R., Richmond, Jim

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Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001) von An, Joon Ho, Lee, Gi Sub, Seo, Heon Decok, Lee, Won Jae, Ku, Kap Ryeol, Jeong, Hae Do, Seo, Jung Doo, Shin, Byoung Chul

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Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers von Stahlbush, Robert E., Skowronski, Marek, Zhang, X., Caldwell, Joshua D., Liu, Kendrick X.

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Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices von Tadjer, Marko J., Hobart, Karl D., Kub, Fritz J., Imhoff, Eugene A.

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Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD von Kordina, Olof, Leone, Stefano, Pedersen, Henrik, Henry, Anne, Janzén, Erik

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Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities von Nakabayashi, Masashi, Tsuge, Hiroshi, Ohtani, Noboru, Aigo, Takashi, Hoshino, Taizo, Yashiro, Hirokatsu, Katsuno, Masakazu, Hirano, Hosei, Fujimoto, Tatsuo, Tatsumi, Kohei

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Aspects of Dislocation Behavior in SiC von Ma, Rong Hui, Dudley, Michael, Huang, Xian Rong, Chen, Yi

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High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing von Endo, Takeshi, Onda, Shoichi, Okuno, Eiichi, Sakakibara, Toshio

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Development of a Practical High-Rate CVD System von Ishida, Yuuki, Takahashi, Tetsuo, Arai, Kazuo, Okumura, Hajime, Yoshida, Sadafumi

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