Anisotropic emission wavelength distribution of semipolar InGaN quantum wells on symmetric convex lens-shaped GaN microstructures von Matsuda, Yoshinobu, Sakaki, Atsushi, Funato, Mitsuru, Kawakami, Yoichi

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Growth evolution of polar-plane-free faceted GaN structures on (11 2 ¯2) and ( 1 ¯ 1 ¯2 2 ¯) GaN substrates von Matsuda, Yoshinobu, Funato, Mitsuru, Kawakami, Yoichi

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Multiwavelength-emitting InGaN quantum wells on convex-lens-shaped GaN microstructures von Matsuda, Yoshinobu, Funato, Souta, Funato, Mitsuru, Kawakami, Yoichi

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Deposition of carbon-containing hole injection layers on p-type Al0.8Ga0.2N grown by metalorganic vapor phase epitaxy von Kishimoto, Katsuhiro, Funato, Mitsuru, Kawakami, Yoichi

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Singularity structures for sub-250 nm emissions from AlGaN-based semiconductors von Funato, Mitsuru, Kawakami, Yoichi

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Heteroepitaxy mechanisms of AlN on nitridated c- and a-plane sapphire substrates von Funato, Mitsuru, Shibaoka, Mami, Kawakami, Yoichi

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Enhancement of the bandgap emission from GaN epilayer by surface plasmon resonance in the quadrupole oscillation mode using Ag nanoparticles protected by an oxide thin film von Kaito, Seiya, Matsuyama, Tetsuya, Wada, Kenji, Funato, Mitsuru, Kawakami, Yoichi, Okamoto, Koichi

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Flexible topographical design of light-emitting diodes realizing electrically controllable multi-wavelength spectra von Matsuda, Yoshinobu, Umemoto, Ryunosuke, Funato, Mitsuru, Kawakami, Yoichi

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Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy von Iwata, Yoshiya, Banal, Ryan G., Ichikawa, Shuhei, Funato, Mitsuru, Kawakami, Yoichi

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Doping and fabrication of polar-plane-free faceted InGaN LEDs with polychromatic emission properties on ( 1 ¯ 1 ¯2 2 ¯) semipolar planes von Matsuda, Yoshinobu, Funato, Mitsuru, Kawakami, Yoichi

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Microscopic origin of thermal droop in blue-emitting InGaN/GaN quantum wells studied by temperature-dependent microphotoluminescence spectroscopy von Ishii, Ryota, Koyama, Yuji, Funato, Mitsuru, Kawakami, Yoichi

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InGaN-based LEDs on convex lens-shaped GaN arrays toward multiwavelength light emitters von Matsuda, Yoshinobu, Funato, Mitsuru, Kawakami, Yoichi

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High-efficiency light emission by means of exciton–surface-plasmon coupling von Okamoto, Koichi, Funato, Mitsuru, Kawakami, Yoichi, Tamada, Kaoru

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Metalorganic vapor phase epitaxy of pit-free AlN homoepitaxial films on various semipolar substrates von Ichikawa, Shuhei, Funato, Mitsuru, Kawakami, Yoichi

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Optical anisotropy of (11 2 ¯3) semipolar InGaN quantum wells homoepitaxially grown on GaN substrates von Funato, Mitsuru, Matsuda, Yoshinobu, Mori-Tamamura, Keito, Yamaguchi, Atsushi A., Goto, Hiroki, Sumida, Yasunobu, Ishihara, Yujiro, Kawakami, Yoichi

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Self‐Limiting Growth of Ultrathin GaN/AlN Quantum Wells for Highly Efficient Deep Ultraviolet Emitters von Kobayashi, Hirotsugu, Ichikawa, Shuhei, Funato, Mitsuru, Kawakami, Yoichi

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Interface formation mechanism of GaN on Al-pretreated ScAlMgO4 (0001) substrates von Fukui, Takato, Matsuda, Yoshinobu, Matsukura, Makoto, Kojima, Takahiro, Funato, Mitsuru, Kawakami, Yoichi

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Highly enhanced green emission from InGaN quantum wells due to surface plasmon resonance on aluminum films von Tateishi, Kazutaka, Funato, Mitsuru, Kawakami, Yoichi, Okamoto, Koichi, Tamada, Kaoru

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Metalorganic vapor phase epitaxy of GaN on 2 inch ScAlMgO4 (0001) substrates von Fukui, Takato, Sakaguchi, Taro, Matsuda, Yoshinobu, Matsukura, Makoto, Kojima, Takahiro, Funato, Mitsuru, Kawakami, Yoichi

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InGaN-based visible light-emitting diodes on ScAlMgO4(0001) substrates von Ozaki, Takuya, Funato, Mitsuru, Kawakami, Yoichi

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