Residual strain dependence of optical characteristics in GaN layers grown on (0001) sapphire substrates von Funato, Kenji, Hashimoto, Shigeki, Yanashima, Katsunori, Nakamura, Fumihiko, Ikeda, Masao

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Residual Strain Dependence of Stimulated Emission in GaN Layers Grown on (0001) Sapphire Substrates von Funato, Kenji, Nakamura, Fumihiko, Hashimoto, Shigeki, Ikeda, Masao

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Epitaxial growth of ZnMgTe and double heterostructure of [formula omitted] on GaAs substrate by metalorganic chemical vapor deposition von Asano, Takeharu, Funato, Kenji, Nakamura, Fumihiko, Ishibashi, Akira

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GaN-based blue laser diodes von Miyajima, Takao, Tojyo, Tsuyoshi, Asano, Takeharu, Yanashima, Katsunori, Kijima, Satoru, Hino, Tomonori, Takeya, Motonobu, Uchida, Shiro, Tomiya, Shigetaka, Funato, Kenji, Asatsuma, Tsunenori, Kobayashi, Toshimasa, Ikeda, Masao

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Heterointerface field effect transistor with 200 A-long gate von ISHIBASHI, A, FUNATO, K, MORI, Y

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Enhancement of electron density in the base of GaSb/InAs hot electron transistor von FUNATO, K, TAIRA, K, NAKAMURA, F, KAWAI, H

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Epitaxial growth of ZnMgTe and double heterostructure of ZnTe/ZnMgTe on GaAs substrate by metalorganic chemical vapor deposition von ASANO, T, FUNATO, K, NAKAMURA, F, ISHIBASHI, A

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Room-temperature continuous-wave operation of GaN-based laser diodes growth by raised-pressure metalorganic chemical vapor deposition von Yanashima, Katsunori, Hashimoto, Shigeki, Hino, Tomonori, Funato, Kenji

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GaN-based blue laser diodes: Semiconducting nitrides von MIYAJIMA, Takao, TOJYO, Tsuyoshi, ASATSUMA, Tsunenori, KOBAYASHI, Toshimasa, IKEDA, Masao, ASANO, Takeharu, YANASHIMA, Katsunori, KIJIMA, Satoru, HINO, Tomonori, TAKEYA, Motonobu, UCHIDA, Shiro, TOMIYA, Shigetaka, FUNATO, Kenji

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Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode with optimized well number von Nakamura, Fumihiko, Kobayashi, Toshimasa, Asatsuma, Tsunenori, Funato, Kenji, Yanashima, Katsunori, Hashimoto, Shigeki, Naganuma, Kaori, Tomioka, Satoshi, Miyajima, Takao, Morita, Etsuo, Kawai, Hiroji, Ikeda, Masao

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Room-temperature continuous-wave operation of GaN-based laser diodes grown by raised-pressure metalorganic chemical vapor deposition von Yanashima, Katsunori, Hashimoto, Shigeki, Hino, Tomonori, Funato, Kenji, Kobayashi, Toshimasa, Naganuma, Kaori, Tojyo, Tsuyoshi, Asano, Takeharu, Asatsuma, Tsunenori, Miyajima, Takao, Ikeda, Masao

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GaN-based high-power laser diodes von Miyajima, Takao, Yoshida, Hiroshi, Yanashima, Katsunori, Yamaguchi, Takashi, Asatsuma, Tsunenori, Funato, Kenji, Hashimoto, Shigeki, Nakajima, Hiroshi, Ozawa, Masafumi, Kobayashi, Toshimasa, Tomiya, Shigetaka, Asano, Takeharu, Uchida, Shiro, Kijima, Satoru, Tojyo, Tsuyoshi, Hino, Tomonori, Ikeda, Masao

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SEMICONDUCTOR DEVICE von FUNATO KENJI

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SEMICONDUCTOR LASER APPARATUS von FUNATO KENJI

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A proposal of a vacuum micro quantum interference transistor von UGAJIN, R, ISHIBASHI, A, FUNATO, K, MORI, Y

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SEMICONDUCTOR DEVICE von TOMITANI SHIGETAKA, FUNATO KENJI

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METHOD OF MANUFACTURING SEMICONDUCTOR THIN FILM, AND SEMICONDUCTOR ELEMENT von TOMITANI SHIGETAKA, FUNATO KENJI

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GaN Film mit reduzierter Verspannungsdichte und Herstellungsverfahren von FUNATO, KENJI, TOMIYA, SHIGETAKA

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HOT-ELECTRON TRANSISTOR von FUNATO KENJI

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GaN film having a reduced threading dislocations density and fabrication method thereof von FUNATO, KENJI, TOMIYA, SHIGETAKA

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