Electron-beam lithography for small MOSFET's von Watts, R.K., Fichtner, W., Fuls, E.N., Thibault, L.R., Johnston, R.L.

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Effect of high-temperature H2-anneals on the slow-trapping instability of MOS structures von Sinha, A.K., Levinstein, H.J., Adda, L.P., Fuls, E.N., Povilonis, E.I.

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All-solid-state camera for the 525-line television format von Sequin, C.H., Zimany, E.J., Tompsett, M.F., Fuls, E.N.

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NMOS Ring oscillators with cobalt-silicided P-diffused shallow junctions formed during the "Poly-plug" contact doping cycle von Vaidya, S., Fuls, E.N., Johnston, R.L.

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Comment on "NMOS ring oscillators with Cobalt-Silicided P-diffused shallow junctions formed during the 'poly-plug' contact doping cycle" von Vaidya, S., Fuls, E.N., Johnston, R.L.

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MOS Compatibility of High-Conductivity TaSi/sub 2//n+ Poly-Si Gates von Sinha, A.K., Lindenberger, W.S., Fraser, D.B., Murarka, S.P., Fuls, E.N.

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MOS Compatibility of high-conductivity TaSi 2 /n + poly-Si gates von Sinha, A.K., Lindenberger, W.S., Fraser, D.B., Murarka, S.P., Fuls, E.N.

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MOS Compatibility of high-conductivity TaSi2/n+poly-Si gates von Sinha, A.K., Lindenberger, W.S., Fraser, D.B., Murarka, S.P., Fuls, E.N.

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High-speed NMOS circuits made with X-ray lithography and reactive sputter etching von Suciu, P.I., Fuls, E.N., Boll, H.J.

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Effect of high-temperature H 2-anneals on the slow-trapping instability of MOS structures von Sinha, A.K., Levinstein, H.J., Adda, L.P., Fuls, E.N., Povilonis, E.I.

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Noise measurements at microwave frequencies in an InSb photoconductive optical detector von Fuls, E.N.

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A Fine-Line nMOS IC for Raster-Scan Control of a 500-MHz Electron-Beam Deflection System von Bayruns, R.J., Suciu, P.I., Wittwer, N.C., Fraser, D.L., Fuls, E.N., Kushner, R.A., Ashley, F.R., Gere, E.A.

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A fine-line nMOS IC for raster-scan control of a 500-MHz electron-beam deflection system von Bayruns, R.J., Suciu, P.I., Wittwer, N.C., Fraser, D.L., Fuls, E.N., Kushner, R.A., Ashley, F.R., Gere, E.A.

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A dual-differential analog shift register with a charge-splitting input and on-chip peripheral circuits von Sealer, D.A., Fuls, E.N., Ryan, P.M., Statile, J.L., Tompsett, M.F., Sequin, C.H.

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All-solid-state camera for the 525-line television format von Sequin, C.H., Zimany, E.J., Tompsett, M.F., Fuls, E.N.

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A 16-kbit Block Addressed Charge-Coupled Memory Device von Mohsen, A.M., Tompsett, M.F., Fuls, E.N., Zimany, E.J.

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Reactively Sputtered Thin Films in the Vanadium-Oxygen System Using Triode Sputtering von Hensler, D. H., Ross, A. R., Fuls, E. N.

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A 16-kbit block addressed charge-coupled memory device von Mohsen, A.M., Tompsett, M.F., Fuls, E.N., Zimany, E.J.

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Charge Analysis and Differential Cross-Section Measurements for Large-Angle Argon Ion-Argon Atom Collisions with Energies between 25 and 138 kev von Carbone, R. J., Fuls, E. N., Everhart, E.

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Measurements of Large-Angle Single Collisions between Helium, Neon, and Argon Atoms at Energies to 100 kev von Fuls, E. N., Jones, P. R., Ziemba, F. P., Everhart, E.

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