Carbon doping of III–V compounds grown by MOMBE von Abernathy, C.R., Pearton, S.J., Ren, F., Hobson, W.S., Fullowan, T.R., Katz, A., Jordan, A.S., Kovalchick, J.

Volltext

Plasma etching of III–V semiconductor thin films von Pearton, S.J., Ren, F., Fullowan, T.R., Katz, A., Hobson, W.S., Chakrabarti, U.K., Abernathy, C.R.

Volltext

Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application von Ren, F., Abernathy, C.R., Pearton, S.J., Lothian, J.R., Wisk, P.W., Fullowan, T.R., Chen, Y.-K., Yang, L.W., Fu, S.T., Brozovich, R.S., Lin, H.H.

Volltext

Carbon-doped base GaAs-AlGaAs HBT's grown by MOMBE and MOCVD regrowth von Hobson, W.S., Ren, F., Abernathy, C.R., Pearton, S.J., Fullowan, T.R., Lothian, J., Jordan, A.S., Lunardi, L.M.

Volltext

Degradation of GaAs/AlGaAs heterojunction bipolar transistors with ion-implant isolation von Frei, M.R, Chiu, T.-Y, Abernathy, C.R, Ren, F, Fullowan, T.R, Lothian, J, Pearton, S.J, Tseng, B, Montgomery, R.K, Smith, P.R

Volltext

HYDROGEN IODIDE-BASED DRY ETCHING OF GAAS, INP, AND RELATED-COMPOUNDS von PEARTON, SJ, CHAKRABARTI, UK, HOBSON, WS, ABERNATHY, CR, KATZ, A, REN, F, FULLOWAN, TR, PERLEY, AP

Volltext

Growth of GaAs/AlGaAs HBTs by MOMBE (CBE) von Abernathy, C.R., Ren, F., Pearton, S.J., Fullowan, T.R., Montgomery, R.K., Wisk, P.W., Lothian, J.R., Smith, P.R., Nottenburg, R.N.

Volltext

Applications of ion implantation in III–V device technology von Pearton, S.J., Ren, F., Chu, S.N.G., Hobson, W.S., Abernathy, C.R., Fullowan, T.R., Lothian, J.R., Elliman, R.G., Jacobson, D.C., Poate, J.M.

Volltext

Self-aligned, metal-masked dry etch processing of III–V electronic and photonic devices von Pearton, S.J., Katz, A., Feingold, A., Ren, F., Fullowan, T.R., Lothian, J.R., Abernathy, C.R.

Volltext

The effects of ionizing radiation on GaAs/AlGaAs and InGaAs/AlInAs heterojunction bipolar transistors von Witmer, S.B., Mittleman, S.D., Lehy, D., Ren, F., Fullowan, T.R., Kopf, R.F., Abernathy, C.R., Pearton, S.J., Humphrey, D.A., Montgomery, R.K., Smith, P.R., Kreskovsky, J.P., Grubin, H.L.

Volltext

Hydrogen incorporation into GaAs, InP and related compounds during epitaxial growth and device processing von Pearton, S.J., Abernathy, C.R., Hobson, W.S., Ren, F., Fullowan, T.R., Lopata, J., Chakrabarti, U.K., Stavola, M., Kozuch, D.M.

Volltext

Rapid isothermal processing for fabrication of GaAs-based electronic devices (HBTs) von Pearton, S.J., Ren, F., Katz, A., Fullowan, T.R., Abernathy, C.R., Hobson, W.S., Kopf, R.F.

Volltext

Characteristics of Be+ and O+ or H+ co-implantation in GaAs/AlGaAs heterojunction bipolar transistor structures von PEARTON, S. J, REN, F, WISK, P. W, FULLOWAN, T. R, KOPF, R. F, KUO, J.-M, HOBSON, W. S, ABERNATHY, C. T

Volltext

Anomalous Damage Depths in Low-Energy Ion Beam Processed III-V Semiconductors von Abernathy, C.R., Ren, F., Chakrabarti, U.K., Pearton, Stephen J., Kopf, R.F., Swaminathan, V., Fullowan, T.R., Katz, A., Hobson, W.S.

Volltext

Role of the Diffusivity of Be and C in the Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors von Abernathy, C.R., Downey, S.W., Ren, F., Lothian, J.R., Wisk, P.W., Pearton, Stephen J., Kopf, R.F., Fullowan, T.R., Emerson, A.B.

Volltext

High yield scalable dry etch process for indium based heterojunction bipolar transistors von Fullowan, T.R., Pearton, S.J., Kopf, R.F., Ren, F., Lothian, J.

Volltext bestellen

High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors von Yang, L.W., Fu, S.T., Clark, B.F., Brozovich, R.S., Lin, H.H., Liu, S.M.J., Chao, P.C., Ren, F., Abernathy, C.R., Pearton, S.J., Lothian, J.R., Wisk, P.W., Fullowan, T.R., Chiu, T.Y., Pei, S.S.

Volltext bestellen

Novel dry etch chemistries for InP and related compounds von Pearton, S.J., Chakrabarti, U.K., Katz, A., Hobson, W.S., Abernathy, C.R., Ren, F., Fullowan, T.R.

Volltext bestellen