Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistors von REN, F, FULLOWAN, T. R, LOTHIAN, J, WISK, P. W, ABERNATHY, C. R, KOPF, R. F, EMERSON, A. B, DOWNEY, S. W, PEARTON, S. J

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Carbon doping of III–V compounds grown by MOMBE von Abernathy, C.R., Pearton, S.J., Ren, F., Hobson, W.S., Fullowan, T.R., Katz, A., Jordan, A.S., Kovalchick, J.

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Degradation of GaAs/AlGaAs heterojunction bipolar transistors with ion-implant isolation von Frei, M.R, Chiu, T.-Y, Abernathy, C.R, Ren, F, Fullowan, T.R, Lothian, J, Pearton, S.J, Tseng, B, Montgomery, R.K, Smith, P.R

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Plasma etching of III–V semiconductor thin films von Pearton, S.J., Ren, F., Fullowan, T.R., Katz, A., Hobson, W.S., Chakrabarti, U.K., Abernathy, C.R.

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Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application von Ren, F., Abernathy, C.R., Pearton, S.J., Lothian, J.R., Wisk, P.W., Fullowan, T.R., Chen, Y.-K., Yang, L.W., Fu, S.T., Brozovich, R.S., Lin, H.H.

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Dispersion-penalty-free transmission over 130-km standard fiber using a 1.55-μm, 10-Gb/s integrated EA/DFB laser with low-extinction ratio and negative chirp von Park, Y.K., Nguyen, T.V., Morton, P.A., Johnson, J.E., Mizuhara, O., Jeong, J., tzeng, L.D., Yeates, P.D., Fullowan, T., Sciortino, P.F., Sergent, A.M., Tsang, W.T., Yadvish, R.D.

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HIGH-RATE, ANISOTROPIC DRY ETCHING OF INP IN HI-BASED DISCHARGES von PEARTON, SJ, CHAKRABARTI, UK, KATZ, A, REN, F, FULLOWAN, TR

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Broad-band tunable electroabsorption modulated laser for WDM application von Tanbun-Ek, T., Adams, L.E., Nykolak, G., Bethea, C., People, R., Sergent, A.M., Wisk, P.W., Sciortino, P.F., Chu, S.N.G., Fullowan, T., Pawelek, R., Tsang, W.T.

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Implant isolation of GaAs-AlGaAs heterojunction bipolar transistor structures von REN, F, PEARTON, S. J, HOBSON, W. S, FULLOWAN, T. R, LOTHIAN, J, YANOF, A. W

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Damage introduction in InP and InGaAs during Ar and H2 plasma exposure von PEARTON, S. J, REN, F, ABERNATHY, C. R, HOBSON, W. S, FULLOWAN, T. R, ESAGUI, R, LOTHIAN, J. R

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HYDROGEN IODIDE-BASED DRY ETCHING OF GAAS, INP, AND RELATED-COMPOUNDS von PEARTON, SJ, CHAKRABARTI, UK, HOBSON, WS, ABERNATHY, CR, KATZ, A, REN, F, FULLOWAN, TR, PERLEY, AP

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Reactive ion etching of GaAs with CCl2F2:O2: etch rates, surface chemistry, and residual damage von PEARTON, S. J, VASILE, M. J, JONES, K. S, SHORT, K. T, LANE, E, FULLOWAN, T. R, VON NEIDA, A. E, HAEGEL, N. M

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Carbon-doped base GaAs-AlGaAs HBT's grown by MOMBE and MOCVD regrowth von Hobson, W.S., Ren, F., Abernathy, C.R., Pearton, S.J., Fullowan, T.R., Lothian, J., Jordan, A.S., Lunardi, L.M.

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Anisotropic dry etching of submicron W features using a Ti mask von Fullowan, T R, Pearton, S J, Ren, F, Mahoney, G E, Kostelak, R L

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Dry etching characteristics of III-V semiconductors in microwave BCl3 discharges von PEARTON, S. J, HOBSON, W. S, ABERNATHY, C. R, REN, F, FULLOWAN, T. R, KATZ, A, PERLEY, A. P

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Growth of GaAs/AlGaAs HBTs by MOMBE (CBE) von Abernathy, C.R., Ren, F., Pearton, S.J., Fullowan, T.R., Montgomery, R.K., Wisk, P.W., Lothian, J.R., Smith, P.R., Nottenburg, R.N.

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Self-aligned, metal-masked dry etch processing of III–V electronic and photonic devices von Pearton, S.J., Katz, A., Feingold, A., Ren, F., Fullowan, T.R., Lothian, J.R., Abernathy, C.R.

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Stability of InAs contact layers on GaAs/AlGaAs heterojunction bipolar transistors during implant isolation annealing von Ren, F, Chu, S N G, Abernathy, C R, Fullowan, T R, Lothian, J R, Pearton, S J

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The effects of ionizing radiation on GaAs/AlGaAs and InGaAs/AlInAs heterojunction bipolar transistors von Witmer, S.B., Mittleman, S.D., Lehy, D., Ren, F., Fullowan, T.R., Kopf, R.F., Abernathy, C.R., Pearton, S.J., Humphrey, D.A., Montgomery, R.K., Smith, P.R., Kreskovsky, J.P., Grubin, H.L.

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Improvement of ohmic contacts on GaAs with in situ cleaning von REN, F, EMERSON, A. B, PEARTON, S. J, FULLOWAN, T. R, BROWN, J. M

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