A new laser-processed polysilicon TFT architecture von Fulks, R.T., Ho, J., Boyce, J.B.

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Pulsed laser crystallization and doping for thin film transistors von Mei, P, Boyce, J.B, Lu, J.P, Ho, J, Fulks, R.T

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Low temperature amorphous silicon channel material for polysilicon thin film transistors von Fulks, R.T, Ho, J, Boyce, J.B, Davis, G.A, Aebi, V

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Laser processing of amorphous silicon for large-area polysilicon imagers von Boyce, J.B., Fulks, R.T., Ho, J., Lau, R., Lu, J.P., Mei, P., Street, R.A., Van Schuylenbergh, K.F., Wang, Y.

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A new self-aligned top-gate polysilicon TFT architecture for low temperature processing von Fulks, R.T., Ho, J., Boyce, J.B.

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MoSi 2 formation by rapid isothermal annealing von Fulks, R.T., Powell, R.A., Stacy, W.T.

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MoSi2formation by rapid isothermal annealing von Fulks, R.T., Powell, R.A., Stacy, W.T.

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Formation of titanium silicide films by rapid thermal processing von Powell, R.A., Chow, R., Thridandam, C., Fulks, R.T., Blech, I.A., Pan, J.-D.T.

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