Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs von Suemitsu, Tetsuya, Fukai, Yoshino K, Sugiyama, Hiroki, Watanabe, Kazuo, Yokoyama, Haruki

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Lateral quantum well wires fabricated by selective metalorganic chemical vapor deposition von FUKUI, T, ANDO, S, FUKAI, Y. K

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Threshold voltage shift in 0.1 μm self-aligned-gate GaAs MESFETs under bias stress and related degradation of ultra-high-speed digital ICs von Fukai, Yoshino K., Yamasaki, Kimiyoshi, Nishimura, Kazumi

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Measuring the junction temperature of AlGaAs/GaAs heterojunction bipolar transistors using electroluminescence von FUKAI, Y. K, MATSUOKA, Y, FURUTA, T

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Reliability study on three-dimensional Au/WSiN interconnections for ultra-compact MMICs von SUGAHARA, H, KIMIZUKA, M, FUKAI, Y. K, HIRANO, M, HYUGA, F

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Electroluminescence measurement of ballistic electron distribution in AlGaAs/GaAs heterojunction bipolar transistor structures with base width modulation von Fukai, Yoshino K., Furuta, Tomofumi, Ishibashi, Tadao

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Saturation of phase coherence length in GaAs/AlGaAs on-facet quantum wires von FUKAI, Y. K, YAMADA, S, NAKANO, H

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Transition from weak to strong spin-orbit scattering regime in diffusive InGaAs/InAlAs quantum wires von Fukai, Yoshino K., Nakano, Hayato, Nakata, Shunji, Tarucha, Seigo, Arai, Kunihiro

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Reflection and refraction of ballistic electrons through different carrier concentration regions von FUKAI, Y. K, TARUCHA, S, HIRAYAMA, Y, TOKURA, Y, SAKU, T

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Electroluminescence of ballistic and phonon emitting electrons in the p-type base of AlGaAs/GaAs HBT structures von FUKAI, Y. K, FURUTA, T, ISHIBASHI, T

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Electron velocity overshoot effect in collector depletion layers on InP/InGaAs heterojunction bipolar transistors von KURISHIMA, K, NAKAJIMA, H, FUKAI, Y. K, MATSUOKA, Y, ISHIBASHI, T

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New method for measuring carrier concentration profile near a GaAs surface through a network analyzer von Fukai, Y.K., Muraguchi, M.

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Improvement of InGaP/GaAs heterointerface quality by controlling AsH3 flow conditions von Fukai, Yoshino K., Hyuga, Fumiaki, Nittono, Takumi, Watanabe, Kazuo, Sugahara, Hirohiko

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Reliability study of parasitic source and drain resistances of InP-based HEMTs von Suemitsu, T., Fukai, Y.K., Sugiyama, H., Watanabe, K., Yokoyama, H.

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Mesoscopic properties of on-facet AlxGa1-xAs/GaAs submicron channels von Yamada, S, Asai, H, Fukai, YK, Fukui, T

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