Theoretical study of performance limits in nano-scale InAs HEMTS based on quantum-corrected Monte Carlo method von Takegishi, T., Watanabe, H., Yamada, R., Matsumoto, T., Hara, S., Fujishiro, H.I.

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Improved electron transport properties of InSb quantum well structure using stepped buffer layer for strain reduction von Fujikawa, S., Taketsuru, T., Tsuji, D., Maeda, T., Fujishiro, H.I.

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A plastic package GaAs MESFET 5.8-GHz receiver front-end with on-chip matching for ETC system von Eng Chuan Low, Yan, K., Nakamura, H., Fujishiro, H.I.

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SSB MMIC mixer with subharmonic LO and CPW circuitsfor 38 GHz band applications von Fujishiro, H.I., Ogawa, Y., Hamada, T., Kimura, T.

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Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier von Ohmuro, K., Fujishiro, H.I., Itoh, M., Nakamura, H., Nishi, S.

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Growth conditions and device performance of InGaAs/AlGaAs pseudomorphic inverted high electron mobility transistor von Kawaguchi, T., Sato, M., Fujishiro, H.I., Nishi, S.

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30aPS-26 STM and ab-initio studies of Si(001)4×2-Ga structure von Hara, S., Kobayashi, H., Irokawa, K., Fujishiro, H.I., Watanabe, K., Miki, H., Kawazu, A.

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Fabrication of 0.2 μm gate pseudomorphic inverted HEMT by phase-shifting technology von Yamada, H.T, Shigemasa, R, Fujishiro, H.I, Nishi, S, Saito, T

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Pseudomorphic inverted HEMT suitable to low supplied voltage application von Kasashima, M., Arai, Y., Fujishiro, H.I., Nakamura, H., Nishi, S.

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A 20-Gb/s flip-flop circuit using direct-coupled FET logic von Shikata, M., Tanaka, K., Yamada, H.T., Fujishiro, H.I., Nishi, S., Yamagishi, C., Akiyama, M.

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60 GHz flip-chip assembled MIC design considering chip-substrate effect von Arai, Y., Sato, M., Yamada, H.T., Hamada, T., Nagai, K., Fujishiro, H.I.

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A 0.5- mu m-gate GaAs/AlGaAs inverted HEMT IC-multiplier and D/A converter von Nishi, S., Seki, S., Saito, T., Fujishiro, H.I., Sano, Y.

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30aPS-26 Si(001)4×2-Ga構造のSTMと第一原理計算による研究(30aPS 領域9ポスターセッション(表面,界面,結晶成長),領域9(表面・界面,結晶成長)) von 原, 紳介, 小林, 秀和, 色川, 勝己, 藤代, 博記, 渡辺, 一之, 三木, 裕文, 河津, 璋

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Self-heating effect on device characteristics of GaN/AlGaN HEMTs: 2D Monte Carlo device simulation von Fujishiro, H.I., Mikami, N., Takei, T., Izawa, M., Moku, T., Ohtuka, K.

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Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier von Ohmuro, K., Fujishiro, H.I., Itoh, M., Nakamura, H., Nishi, S.

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A plastic package GaAs MESFET 5.8 GHz receiver front-end with on-chip matching for ETC system von Eng Chuan Low, Nakamura, H., Fujishiro, H.I., Kai Tuan Yan

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Self-heating effect on device characteristics of GaN/AlGaN HEMTs: 2D Monte Carlo device simulation von Fujishiro, H.I., Mikami, N., Takei, T., Izawa, M., Moku, T., Ohtuka, K.

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Pseudomorphic inverted HEMT suitable to low supplied voltage application von Kasashima, M., Arai, Y., Fujishiro, H.I., Nakamura, H., Nishi, S.

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0.2 mu m gate pseudomorphic inverted HEMT for high speed digital ICs von Tsuji, H., Fujishiro, H.I., Shikata, M., Tanaka, K., Nishi, S.

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A 5.8 GHz transmitter MMIC for electronic toll collection system von Zhongmin Wen, Katayanagi, T., Arai, Y., Fujishiro, H.I., Seki, S.

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