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Ge thin film growth on Si(111) surface using hydrogen surfactant
Veröffentlicht in Thin solid films
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Structural Analysis of 6H–SiC(0001)√3×√3 Reconstructed Surface
Veröffentlicht in Japanese Journal of Applied Physics
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In situ monitoring of hydrogen-surfactant effect during Ge growth on Si(0 0 1) using coaxial impact-collision ion scattering spectroscopy and time-of-flight elastic recoil detectio...
Veröffentlicht in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
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Adsorption of Atomic Hydrogen on Ag-Covered 6H-SiC(0001) Surface
Veröffentlicht in Japanese Journal of Applied Physics
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