Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes von Tanaka, Atsushi, Matsuhata, Hirofumi, Kawabata, Naoyuki, Mori, Daisuke, Inoue, Kei, Ryo, Mina, Fujimoto, Takumi, Tawara, Takeshi, Miyazato, Masaki, Miyajima, Masaaki, Fukuda, Kenji, Ohtsuki, Akihiro, Kato, Tomohisa, Tsuchida, Hidekazu, Yonezawa, Yoshiyuki, Kimoto, Tsunenobu

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Orientation control of anchored molecules on metal-oxide substrates von Imae, Ichiro, Tsukimori, Masaki, Fujimoto, Takumi, Tsukiyama, Kazuki, Harima, Yutaka

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Emotion Prediction Based on Conversational Context and Commonsense Knowledge Graphs von Fujimoto, Takumi, Ito, Takayuki

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Pressure and magnetic field effects on the valence transition of EuRh2Si2 von Mitsuda, Akihiro, Kishaba, Eigo, Fujimoto, Takumi, Oyama, Kohei, Wada, Hirofumi, Mizumaki, Masaichiro, Kawamura, Naomi, Ishimatsu, Naoki

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Pressure and magnetic field effects on the valence transition of EuRh^sub 2^Si^sub 2 von Mitsuda, Akihiro, Kishaba, Eigo, Fujimoto, Takumi, Oyama, Kohei, Wada, Hirofumi, Mizumaki, Masaichiro, Kawamura, Naomi, Ishimatsu, Naoki

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Emotion Prediction based on Conversational Context and Commonsense Knowledge Graph von FUJIMOTO, Takumi, ITO, Takayuki

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Large Magnetoresistance and Volume Expansion Associated with Valence Transition in Eu(Rh 1− x Ir x ) 2 Si 2 von Mitsuda, Akihiro, Fujimoto, Takumi, Kishaba, Eigo, Hamano, Suguru, Kondo, Akihiro, Kindo, Koichi, Wada, Hirofumi

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Large Magnetoresistance and Volume Expansion Associated with Valence Transition in Eu(Rh^sub 1-x^Ir^sub x^)^sub 2^Si^sub 2 von Mitsuda, Akihiro, Fujimoto, Takumi, Kishaba, Eigo, Hamano, Suguru, Kondo, Akihiro, Kindo, Koichi, Wada, Hirofumi

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Large Magnetoresistance and Volume Expansion Associated with Valence Transition in Eu(Rh sub( 1-x)Ir sub( x)) sub( 2)Si sub( 2) von Mitsuda, Akihiro, Fujimoto, Takumi, Kishaba, Eigo, Hamano, Suguru, Kondo, Akihiro, Kindo, Koichi, Wada, Hirofumi

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Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer von Tawara, Takeshi, Miyazawa, Tetsuya, Ryo, Mina, Miyazato, Masaki, Fujimoto, Takumi, Takenaka, Kensuke, Matsunaga, Shinichiro, Miyajima, Masaaki, Otsuki, Akihiro, Yonezawa, Yoshiyuki, Kato, Tomohisa, Okumura, Hajime, Kimoto, Tsunenobu, Tsuchida, Hidekazu

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Silicon carbide semiconductor device von Fujimoto, Takumi

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VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE von FUJIMOTO, Takumi

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SILICON CARBIDE SEMICONDUCTOR DEVICE von FUJIMOTO, Takumi

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Silicon carbide semiconductor device von Fujimoto, Takumi

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Electronic circuit and semiconductor device von Fujimoto, Takumi

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Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device von Fujimoto, Takumi

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ELECTRONIC CIRCUIT AND SEMICONDUCTOR DEVICE von FUJIMOTO, Takumi

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SILICON CARBIDE SEMICONDUCTOR DEVICE von FUJIMOTO, Takumi

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Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device von Fujimoto, Takumi

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SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE von FUJIMOTO, Takumi

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