MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor von Seryogin, George, Alema, Fikadu, Valente, Nicholas, Fu, Houqiang, Steinbrunner, Erich, Neal, Adam T., Mou, Shin, Fine, Aaron, Osinsky, Andrei

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Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers von Fu, Houqiang, Huang, Xuanqi, Chen, Hong, Lu, Zhijian, Baranowski, Izak, Zhao, Yuji

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Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications von Mudiyanselage, Dinusha Herath, Wang, Dawei, Zhao, Yuji, Fu, Houqiang

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Dopant profiling in p-i-n GaN structures using secondary electrons von Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, Ponce, Fernando A.

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Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV von Houqiang Fu, Baranowski, Izak, Xuanqi Huang, Hong Chen, Zhijian Lu, Montes, Jossue, Xiaodong Zhang, Yuji Zhao

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Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction von Montes, Jossue, Yang, Chen, Fu, Houqiang, Yang, Tsung-Han, Fu, Kai, Chen, Hong, Zhou, Jingan, Huang, Xuanqi, Zhao, Yuji

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Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics von Liu, Hanxiao, Fu, Houqiang, Fu, Kai, Alugubelli, Shanthan R., Su, Po-Yi, Zhao, Yuji, Ponce, Fernando A.

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Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well von Fu, Houqiang, Chen, Hong, Huang, Xuanqi, Lu, Zhijian, Zhao, Yuji

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Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications von Fu, Houqiang, Lu, Zhijian, Huang, Xuanqi, Chen, Hong, Zhao, Yuji

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Acoustic and optical phonon frequencies and acoustic phonon velocities in Si-doped AlN thin films von Wright, Dylan, Mudiyanselage, Dinusha Herath, Guzman, Erick, Fu, Xuke, Teeter, Jordan, Da, Bingcheng, Kargar, Fariborz, Fu, Houqiang, Balandin, Alexander A.

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Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect von Fu, Houqiang, Lu, Zhijian, Zhao, Yuji

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The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices von Fu, Kai, Fu, Houqiang, Deng, Xuguang, Su, Po-Yi, Liu, Hanxiao, Hatch, Kevin, Cheng, Chi-Yin, Messina, Daniel, Meidanshahi, Reza Vatan, Peri, Prudhvi, Yang, Chen, Yang, Tsung-Han, Montes, Jossue, Zhou, Jingan, Qi, Xin, Goodnick, Stephen M., Ponce, Fernando A., Smith, David J., Nemanich, Robert, Zhao, Yuji

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Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes von Fu, Houqiang, Huang, Xuanqi, Chen, Hong, Lu, Zhijian, Zhang, Xiaodong, Zhao, Yuji

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Low-frequency noise in β-(AlxGa1−x)2O3 Schottky barrier diodes von Ghosh, Subhajit, Mudiyanselage, Dinusha Herath, Rumyantsev, Sergey, Zhao, Yuji, Fu, Houqiang, Goodnick, Stephen, Nemanich, Robert, Balandin, Alexander A.

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Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition von Fu, Kai, Fu, Houqiang, Liu, Hanxiao, Alugubelli, Shanthan Reddy, Yang, Tsung-Han, Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Montes, Jossue, Ponce, Fernando A., Zhao, Yuji

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Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact von Yang, Chengzhi, Jiang, Cheng, Niu, Wencheng, Hao, Dandan, Huang, Hao, Fu, Houqiang, Miao, Jinshui, Liu, Xingqiang, Zou, Xuming, Shan, Fukai, Yang, Zhenyu

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Surface-plasmon-enhanced MoS2 multifunctional optoelectronic memory for emulating human retinal imaging von Zhou, Chengjie, Niu, Wencheng, Li, Lei, Hao, Dandan, Huang, Hao, Fu, Houqiang, Liu, Xingqiang, Zou, Xuming, Shan, Fukai, Yang, Zhenyu

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High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric von Huang, Qizhi, Deng, Xuguang, Zhang, Li, Lin, Wenkui, Cheng, Wei, Yu, Guohao, Ju, Tao, Mudiyanselage, Dinusha Herath, Wang, Dawei, Fu, Houqiang, Zeng, Zhongming, Zhang, Baoshun, Xu, Feng

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High-quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant von Tang, Wenbo, Ma, Yongjian, Zhang, Xiaodong, Zhou, Xin, Zhang, Li, Zhang, Xuan, Chen, Tiwei, Wei, Xing, Lin, Wenkui, Mudiyanselage, Dinusha Herath, Fu, Houqiang, Zhang, Baoshun

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Characterization of As-Grown and Regrown GaN-on-GaN Structures for Vertical p-n Power Devices von Peri, Prudhvi, Fu, Kai, Fu, Houqiang, Zhao, Yuji, Smith, David J.

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