Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction von Montes, Jossue, Yang, Chen, Fu, Houqiang, Yang, Tsung-Han, Fu, Kai, Chen, Hong, Zhou, Jingan, Huang, Xuanqi, Zhao, Yuji

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Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications von Mudiyanselage, Dinusha Herath, Wang, Dawei, Zhao, Yuji, Fu, Houqiang

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The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices von Fu, Kai, Fu, Houqiang, Deng, Xuguang, Su, Po-Yi, Liu, Hanxiao, Hatch, Kevin, Cheng, Chi-Yin, Messina, Daniel, Meidanshahi, Reza Vatan, Peri, Prudhvi, Yang, Chen, Yang, Tsung-Han, Montes, Jossue, Zhou, Jingan, Qi, Xin, Goodnick, Stephen M., Ponce, Fernando A., Smith, David J., Nemanich, Robert, Zhao, Yuji

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Acoustic and optical phonon frequencies and acoustic phonon velocities in Si-doped AlN thin films von Wright, Dylan, Mudiyanselage, Dinusha Herath, Guzman, Erick, Fu, Xuke, Teeter, Jordan, Da, Bingcheng, Kargar, Fariborz, Fu, Houqiang, Balandin, Alexander A.

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Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films von Su, Po-Yi, Liu, Hanxiao, Yang, Chen, Fu, Kai, Fu, Houqiang, Zhao, Yuji, Ponce, Fernando A.

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AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric von Yang, Tsung-Han, Brown, Jesse, Fu, Kai, Zhou, Jingan, Hatch, Kevin, Yang, Chen, Montes, Jossue, Qi, Xin, Fu, Houqiang, Nemanich, Robert J., Zhao, Yuji

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Surface-plasmon-enhanced MoS2 multifunctional optoelectronic memory for emulating human retinal imaging von Zhou, Chengjie, Niu, Wencheng, Li, Lei, Hao, Dandan, Huang, Hao, Fu, Houqiang, Liu, Xingqiang, Zou, Xuming, Shan, Fukai, Yang, Zhenyu

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Low-frequency noise in β-(AlxGa1−x)2O3 Schottky barrier diodes von Ghosh, Subhajit, Mudiyanselage, Dinusha Herath, Rumyantsev, Sergey, Zhao, Yuji, Fu, Houqiang, Goodnick, Stephen, Nemanich, Robert, Balandin, Alexander A.

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Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers von Huang, Xuanqi, Chen, Hong, Fu, Houqiang, Baranowski, Izak, Montes, Jossue, Yang, Tsung-Han, Fu, Kai, Gunning, Brendan P., Koleske, Daniel D., Zhao, Yuji

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High-quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant von Tang, Wenbo, Ma, Yongjian, Zhang, Xiaodong, Zhou, Xin, Zhang, Li, Zhang, Xuan, Chen, Tiwei, Wei, Xing, Lin, Wenkui, Mudiyanselage, Dinusha Herath, Fu, Houqiang, Zhang, Baoshun

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Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency von Huang, Xuanqi, Fu, Houqiang, Chen, Hong, Zhang, Xiaodong, Lu, Zhijian, Montes, Jossue, Iza, Michael, DenBaars, Steven P., Nakamura, Shuji, Zhao, Yuji

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Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress von Huang, Xuanqi, Fu, Houqiang, Chen, Hong, Lu, Zhijian, Baranowski, Izak, Montes, Jossue, Yang, Tsung-Han, Gunning, Brendan P., Koleske, Dan, Zhao, Yuji

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Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature von Wang, Zheming, Yu, Guohao, Yuan, Xu, Deng, Xuguang, Zhang, Li, Dai, Shige, Yang, Guang, Zhang, Liguo, Ji, Rongkun, Kan, Xiang, Zhang, Xuan, Fu, Houqiang, Zeng, Zhongming, Wong, Roy K.-Y., Cai, Yong, Zhang, Baoshun

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Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications von Fu, Houqiang, Lu, Zhijian, Huang, Xuanqi, Chen, Hong, Zhao, Yuji

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Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model von Huang, Xuanqi, Fu, Houqiang, Chen, Hong, Lu, Zhijian, Ding, Ding, Zhao, Yuji

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Characterization of As-Grown and Regrown GaN-on-GaN Structures for Vertical p-n Power Devices von Peri, Prudhvi, Fu, Kai, Fu, Houqiang, Zhao, Yuji, Smith, David J.

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MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor von Seryogin, George, Alema, Fikadu, Valente, Nicholas, Fu, Houqiang, Steinbrunner, Erich, Neal, Adam T., Mou, Shin, Fine, Aaron, Osinsky, Andrei

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Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect von Fu, Houqiang, Lu, Zhijian, Zhao, Yuji

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Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part I von Fu, Houqiang, Fu, Kai, Chowdhury, Srabanti, Palacios, Tomas, Zhao, Yuji

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Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part II von Fu, Houqiang, Fu, Kai, Chowdhury, Srabanti, Palacios, Tomas, Zhao, Yuji

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