Design considerations for three-dimensional betavoltaics von Murphy, John W., Voss, Lars F., Frye, Clint D., Shao, Qinghui, Kazkaz, Kareem, Stoyer, Mark A., Henderson, Roger A., Nikolic, Rebecca J.

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Demonstration of a Three-Dimensionally Structured Betavoltaic von Murphy, John W., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Voss, Lars F., Nikolic, Rebecca J.

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Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC von Frye, Clint D., Murphy, John W., Shao, Qinghui, Voss, Lars F., Harrison, Sara E., Edgar, James H., Nikolić, Rebecca J.

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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System von Shao, Qinghui, Jarrell, Joshua T., Murphy, John M., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Voss, Lars F., Nikolic, Rebecca J.

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Titanium–indium oxy(nitride) with and without RuO2 loading as photocatalysts for hydrogen production under visible light from water von Kuo, Yenting, Frye, Clint D., Ikenberry, Myles, Klabunde, Kenneth J.

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Seebeck Coefficient and Electrical Resistivity of Single Crystal B12As2 at High Temperatures von Frye, Clint D, Edgar, J. H, Ohkubo, Isao, Mori, Takao

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Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma von Frye, Clint D, Donald, Scott B, Reinhardt, Catherine E, Nikolic, Rebecca J, Voss, Lars F, Harrison, Sara E

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Formation of tunable diamond micro- and nanopillars for field effect enhancement applications von Evans, Dylan M., Frye, Clint D.

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Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching von Frye, Clint D., Donald, Scott B., Reinhardt, Catherine, Voss, Lars F., Harrison, Sara E.

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ICP etching of GaN microstructures in a Cl2–Ar plasma with subnanometer-scale sidewall surface roughness von Frye, Clint D., Reinhardt, Catherine E., Donald, Scott B., Voss, Lars F., Harrison, Sara E.

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Photoluminescence and Raman spectroscopy of wide bandgap semiconductors damaged by deep-UV laser irradiation von Huso, Jesse, McCluskey, Matthew D., McCloy, John S., Frye, Clint D., Varley, Joel B., Voss, Lars F.

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Ultradeep electron cyclotron resonance plasma etching of GaN von Harrison, Sara E., Voss, Lars F., Torres, Andrea M., Frye, Clint D., Shao, Qinghui, Nikolić, Rebecca J.

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Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC von Frye, Clint D., Murphy, John W., Shao, Qinghui, Voss, Lars F., Harrison, Sara E., Edgar, James H., Nikolić, Rebecca J.

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Maskless random antireflective nanotexturing of single crystal SiC von Voss, Lars F., Frye, Clint D., Bora, Mihail, Hall, David L., Grivickas, Paulius V., Conway, Adam M.

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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System von Shao, Qinghui, Jarrell, Joshua T., Murphy, John M., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Voss, Lars F., Nikolic, Rebecca J.

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Photoluminescence mapping of laser-damaged β-Ga2O3 von Huso, Jesse, McCluskey, Matthew D., McCloy, John S., Bhattacharyya, Arkka, Krishnamoorthy, Sriram, Frye, Clint D., Varley, Joel B., Voss, Lars F.

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Maskless random antireflective nanotexturing of single crystal SiC von Voss, Lars F., Frye, Clint D., Bora, Mihail, Hall, David L., Grivickas, Paulius V., Conway, Adam M.

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Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors von Ghandiparsi, Soroush, Chatterjee, Bikram, Shen, Jimmy‐Xuan, Gottlieb, Miranda S., Frye, Clint D., Schneider, Joseph D., Muir, Ryan D., Buckley, Brandon W., Harrison, Sara E., Shao, Qinghui, Varley, Joel B., Voss, Lars F.

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Titanium―indium oxy(nitride) with and without RuO2 loading as photocatalysts for hydrogen production under visible light from water: Catalysis Today Focus Issue: Solar Fuels von YENTING KUO, FRYE, Clint D, IKENBERRY, Myles, KLABUNDE, Kenneth J

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Seebeck Coefficient and Electrical Resistivity of Single Crystal B 12 As 2 at High Temperatures von D. Frye, Clint, H. Edgar, J., Ohkubo, Isao, Mori, Takao

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