3D resistive RAM cell design for high-density storage class memory—a review von Hudec, Boris, Hsu, Chung-Wei, Wang, I-Ting, Lai, Wei-Li, Chang, Che-Chia, Wang, Taifang, Fröhlich, Karol, Ho, Chia-Hua, Lin, Chen-Hsi, Hou, Tuo-Hung

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Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions von Fröhlich, Karol, Kundrata, Ivan, Blaho, Michal, Precner, Marian, Ťapajna, Milan, Klimo, Martin, Šuch, Ondrej, Škvarek, Ondrej

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On Passive Permutation Circuits von Such, Ondrej, Linn, Eike, Klimo, Martin, Jancovic, Peter, Fratrik, Milan, Frohlich, Karol

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Atomic layer deposition of lithium metaphosphate from H3PO4 and P4O10 facilitated via direct liquid injection: Experiment and theory von Kundrata, Ivan, Mošková, Antónia, Moško, Martin, Mičušík, Matej, Dobročka, Edmund, Fröhlich, Karol

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Compact Modeling of Complementary Resistive Switching Devices Using Memdiodes von Miranda, Enrique A., Frohlich, Karol

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Stabilization of the Solid-Electrolyte-Interphase Layer and Improvement of the Performance of Silicon–Graphite Anodes by Nanometer-Thick Atomic-Layer-Deposited ZnO Films von Sahoo, Prangya P., Güneren, Alper, Hudec, Boris, Mikolášek, Miroslav, Nada, Ahmed, Precnerová, Magdaléna, Mičušík, Matej, Lenčéš, Zoltán, Nádaždy, Peter, Fröhlich, Karol

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Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films von Kundrata, Ivan, Fröhlich, Karol, Vančo, Lubomír, Mičušík, Matej, Bachmann, Julien

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Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors von Aarik, Lauri, Arroval, Tõnis, Rammula, Raul, Mändar, Hugo, Sammelselg, Väino, Hudec, Boris, Hušeková, Kristína, Fröhlich, Karol, Aarik, Jaan

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Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films von Kukli, Kaupo, Kemell, Marianna, Vehkamäki, Marko, Heikkilä, Mikko J., Mizohata, Kenichiro, Kalam, Kristjan, Ritala, Mikko, Leskelä, Markku, Kundrata, Ivan, Fröhlich, Karol

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Optimization of the ohmic contact processing in InAlN//GaN high electron mobility transistors for lower temperature of annealing von Čičo, Karol, Gregušová, Dagmar, Gaži, Štefan, Šoltýs, Ján, Kuzmík, Ján, Carlin, Jean-François, Grandjean, Nicolas, Pogany, Dionýz, Fröhlich, Karol

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Characterization of MIS photoanode with a thin SiO2 layer for photoelectrochemical water splitting von Chymo, Filip, Fröhlich, Karol, Kundrata, Ivan, Hušeková, Kristína, Harmatha, Ladislav, Racko, Juraj, Breza, Juraj, Mikolášek, Miroslav

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Additive Manufacturing in Atomic Layer Processing Mode von Kundrata, Ivan, Barr, Maïssa K. S., Tymek, Sarah, Döhler, Dirk, Hudec, Boris, Brüner, Philipp, Vanko, Gabriel, Precner, Marian, Yokosawa, Tadahiro, Spiecker, Erdmann, Plakhotnyuk, Maksym, Fröhlich, Karol, Bachmann, Julien

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Functionalized graphene transistor for ultrasensitive detection of carbon quantum dots von Brndiarova, Jana, Siffalovic, Peter, Hulman, Martin, Kalosi, Anna, Bodik, Michal, Skakalova, Viera, Micusik, Matej, Markovic, Zoran, Majkova, Eva, Frohlich, Karol

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Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs von Blaho, Michal, Gregušová, Dagmar, Jurkovič, Michal, Haščík, Štefan, Fedor, Ján, Kordoš, Peter, Fröhlich, Karol, Brunner, Frank, Cho, Melani, Hilt, Oliver, Würfl, Joachim, Kuzmík, Ján

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Interface engineered HfO sub(2)-based 3D vertical ReRAM von Hudec, Boris, Wang, I-Ting, Lai, Wei-Li, Chang, Che-Chia, Jancovic, Peter, Frohlich, Karol, Micusik, Matej, Omastova, Maria, Hou, Tuo-Hung

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RF Performance of InAlN/GaN HFETs and MOSHFETs With f T A L G up to 21 GHz a mu m von Kordos, Peter, Mikulics, Martin, Fox, Alfred, Gregusova, Dagmar, Cico, Karol, Carlin, Jean-Francois, Grandjean, Nicolas, Novak, Jozef, Frohlich, Karol

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RF Performance of InAlN/GaN HFETs and MOSHFETs With [Formula Omitted] up to 21 [Formula Omitted] von Kordos, Peter, Mikulics, Martin, Fox, Alfred, Gregusova, Dagmar, Cico, Karol, Carlin, Jean-Francois, Grandjean, Nicolas, Novak, Jozef, Frohlich, Karol

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Trap-assisted tunnelling current in MIM structures von Racko, Juraj, Mikolášek, Miroslav, Granzner, Ralf, Breza, Juraj, Donoval, Daniel, Grmanová, Alena, Harmatha, Ladislav, Schwierz, Frank, Fröhlich, Karol

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Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation von Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Douvry, Y., Gaquiere, C., DeJaeger, J.-C., Cico, K., Frohlich, K., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., Kuzmik, J.

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Impact of plasma treatment on electrical properties of TiO2/RuO2 based DRAM capacitor von Hudec, Boris, Hušeková, Kristína, Rosová, Alica, Šoltýs, Ján, Rammula, Raul, Kasikov, Aarne, Uustare, Teet, Mi ušík, Matej, Omastová, Mária, Aarik, Jaan, Fröhlich, Karol

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