Role of experimental resolution in measurements of critical layer thickness for strained-layer epitaxy von FRITZ, I. J

Volltext

X-ray reciprocal-space mapping of strain relaxation and tilting in linearly graded InAlAs buffers von Olsen, J. A., Hu, E. L., Lee, S. R., Fritz, I. J., Howard, A. J., Hammons, B. E., Tsao, J. Y.

Volltext

The growth of infrared antimonide-based semiconductor lasers by metal-organic chemical vapor deposition von BIEFELD, R. M, ALLERMAN, A. A, KURTZ, S. R, JONES, E. D, FRITZ, I. J, SIEG, R. M

Volltext

Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxy von GOURLEY, P. L, FRITZ, I. J, DAWSON, L. R

Volltext

Semiconductor characterization by a new contactless electroreflectance technique employing surface acoustic waves von Fritz, I J, Brennan, T M

Volltext

p-channel strained quantum well, field-effect transistor von DRUMMOND, T. J, ZIPPERIAN, T. E, FRITZ, I. J, SCHIRBER, J. E, PLUT, T. A

Volltext

Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures von Fritz, I. J., Gourley, P. L., Dawson, L. R.

Volltext

Energy levels of finite-depth quantum wells in an electric field von Fritz, I. J.

Volltext

Light-hole conduction in InGaAs/GaAs strained-layer superlattices von SCHIRBER, J. E, FRITZ, I. J, DAWSON, L. R

Volltext

Dependence of critical layer thickness on strain for InXGa1-XAs/GaAs strained-layer superlattices von FRITZ, I. J, PICRAUX, S. T, DAWSON, L. R, DRUMMOND, T. J, LAIDIG, W. D, ANDERSON, N. G

Volltext

novel reflectance modulator employing an InGaAs/AlGaAs strained-layer superlattice Fabry-Perot cavity with unstrained InGaAs/InAlAs mirrors von FRITZ, I. J, MYERS, D. R, VAWTER, G. A, BRENNAN, T. M, HAMMONS, B. E

Volltext

Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained-layer superlattices von FRITZ, I. J, GOURLEY, P. L, DAWSON, L. R, SCHIRBER, J. E

Volltext

Reflectance modulator based on tandem Fabry-Perot resonators von FRITZ, I. J, KLEM, J. F, WENDT, J. R

Volltext

High photoconductive gain in lateral InAsSb strained-layer superlattice infrared detectors von KURTZ, S. R, BIEFELD, R. M, DAWSON, L. R, FRITZ, I. J, ZIPPERIAN, T. E

Volltext

Modulation-doped (Al,Ga)As/AlAs superlattice: electron transfer into AlAs von DRUMMOND, T. J, FRITZ, I. J

Volltext

Elastic properties of UO2 at high pressure von Fritz, I. J.

Volltext

Fabry-Perot reflectance modulator for 1.3 μm from (InAlGa)As materials grown at low temperature von FRITZ, I. J, HAMMONS, B. E, HOWARD, A. J, BRENNAN, T. M, OLSEN, J. A

Volltext

Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectors von Kurtz, S.R., Dawson, L.R., Biefeld, R.M., Fritz, I.J., Zipperian, T.E.

Volltext

Graded-composition buffer layers using digital AlGaAsSb alloys von Fritz, I. J., Dawson, L. R., Olsen, J. A., Howard, A. J.

Volltext

Determination of energy-band dispersion curves in strained-layer structures von JONES, E. D, LYO, S. K, FRITZ, I. J, KLEM, J. F, SCHIRBER, J. E, TIGGES, C. P, DRUMMOND, T. J

Volltext