Study of Ge‐Rich Ge–Sb–Te Device‐Dependent Segregation for Industrial Grade Embedded Phase‐Change Memory von Petroni, Elisa, Allegra, Mario, Baldo, Matteo, Laurin, Luca, Serafini, Andrea, Favennec, Laurent, Desvoivres, Latifa, Sandrini, Jury, Boccaccio, Christian, Le‐Friec, Yannick, Ostrovsky, Alain, Gouraud, Pascal, Bonnevialle, Aurore, Ranica, Rossella, Redaelli, Andrea

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Exploring the evolution of mass density and thickness of N-doped Ge-rich GeSbTe during multistep crystallization von Remondina, Jacopo, Portavoce, Alain, Le Friec, Yannick, Benoit, Daniel, Petroni, Elisa, Putero, Magali

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Surface oxidation phenomena in Ge-rich GeSbTe alloys and N doping influence for Phase-Change Memory applications von Goffart, Ludovic, Pelissier, Bernard, Lefèvre, Gauthier, Le–Friec, Yannick, Vallée, Christophe, Navarro, Gabriele, Reynard, Jean–Philippe

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Investigation of Phase Segregation Dynamics in Ge‐Rich GST Thin Films by In Situ X‐Ray Fluorescence Mapping von Fernandes, Thomas, Texier, Michael, Hans, Philipp, Mocuta, Cristian, Comby‐Dassonneville, Solène, Navarro, Gabriele, Jeannot, Simon, Cornelius, Thomas W., Han, Madeleine, Ruiz, Jaime Segura, Rosenthal, Martin, le Friec, Yannick, Simola, Roberto, Thomas, Olivier

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Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness von Hans, Philipp, Mocuta, Cristian, Le-Friec, Yannick, Boivin, Philippe, Simola, Roberto, Thomas, Olivier

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Thermal characterization of Ge-rich GST thin films for phase change memories by Raman thermometry von Patil, Akash, Le-Friec, Yannick, Roussel, Pascal, Deblock, Yves, Jeannot, Simon, Boivin, Philippe, Dubois, Emmanuel, Robillard, Jean-François

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65 nm Device Manufacture Using Shaped E-Beam Lithography von Pain, Laurent, Jurdit, Murielle, Laplanche, Yves, Todeschini, Jérôme, Leininger, Hugues, Tourniol, Sonia, Faure, Romuald, Bossy, Xavier, Palla, Ramiro, Beverina, Alessio, Broekaart, Marcel, Judong, Fabienne, Brosselin, Karine, Depoyan, Linda, Friec, Yannick Le, Leverd, Francois, Jonghe, Veronique De, Josse, Emmanuelle, Hinsinger, Olivier, Brun, Philippe, Henry, Daniel, Woo, Michael, Stolk, Peter, Tavel, Brice, Arnaud, Franck

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Thermal desorption study on possible hydrogen sources and diffusion barriers in CMOS technology von Remondina, Jacopo, Portavoce, Alain, Bertoglio, Maxime, Roland, Guillaume, Lorut, Frédéric, Le Friec, Yannick, Benoit, Daniel, Putero, Magali

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Thermal desorption study on possible hydrogen sources and diffusion barriers in CMOS technology von Remondina, Jacopo, Portavoce, Alain, Bertoglio, Maxime, Roland, Guillaume, Lorut, Frédéric, Le Friec, Yannick, Benoit, Daniel, Putero, Magali

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On Some Unique Specificities of Ge‐Rich GeSbTe Phase‐Change Material Alloys for Nonvolatile Embedded‐Memory Applications von Luong, Minh Anh, Agati, Marta, Ratel Ramond, Nicolas, Grisolia, Jérémie, Le Friec, Yannick, Benoit, Daniel, Claverie, Alain

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An In Situ Synchrotron X‐Ray Diffraction Study on the Influence of Hydrogen on the Crystallization of Ge‐Rich Ge 2 Sb 2 Te 5 von Hans, Philipp, Mocuta, Cristian, Richard, Marie-Ingrid, Benoit, Daniel, Boivin, Philippe, Le-Friec, Yannick, Simola, Roberto, Thomas, Olivier

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Multistep Crystallization of Ge‐Rich GST Unveiled by In Situ synchrotron X‐ray diffraction and (scanning) transmission electron microscopy von Rahier, Eloïse, Luong, Minh-Anh, Ran, Sijia, Ratel-Ramond, Nicolas, Saha, Sabyasachi, Mocuta, Cristian, Benoit, Daniel, Le-Friec, Yannick, Claverie, Alain

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Impact of Nitrogen on the Crystallization and Microstructure of Ge‐Rich GeSbTe Alloys von Luong, Minh Anh, Wen, Dingfang, Rahier, Eloïse, Ratel Ramond, Nicolas, Pecassou, Béatrice, Le Friec, Yannick, Benoit, Daniel, Claverie, Alain

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Investigating the crystallization behaviour of Ge-rich GST PCMs with in situ synchrotron XRD von Hans, Philipp, Guichet, Christophe, Mocuta, Cristian, Richard, Marie Ingrid, Benoit, Daniel, Boivin, Philippe, Le-Friec, Yannick, Simola, Roberto, Thomas, Olivier

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Multistep Crystallization of Ge‐Rich GST Unveiled by InSitu synchrotron X‐ray diffraction and (scanning) transmission electron microscopy von Rahier, Eloïse, Minh-Anh Luong, Sijia Ran, Ratel-Ramond, Nicolas, Saha, Sabyasachi, Mocuta, Cristian, Benoit, Daniel, Le-Friec, Yannick, Claverie, Alain

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Investigation of Phase Segregation Dynamics in Ge-Rich GST Thin Films by In Situ X-Ray Fluorescence Mapping von Fernandes, Thomas, Texier, Michael, Hans, Philipp, Mocuta, Cristian, Comby-Dassonneville, Solene, Navarro, Gabriele, Jeannot, Simon, Cornelius, Thomas W, Han, Madeleine, Ruiz, Jaime Segura, Rosenthal, Martin, le Friec, Yannick, Simola, Roberto, Thomas, Olivier

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Multistep Crystallization of Ge‐Rich GST Unveiled by In Situ synchrotron X‐ray diffraction and (scanning) transmission electron microscopy von Rahier, Eloïse, Luong, Minh-Anh, Ran, Sijia, Ratel-Ramond, Nicolas, Saha, Sabyasachi, Mocuta, Cristian, Benoit, Daniel, Le-Friec, Yannick, Claverie, Alain

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An In Situ Synchrotron X‐Ray Diffraction Study on the Influence of Hydrogen on the Crystallization of Ge‐Rich Ge2Sb2Te5 von Hans, Philipp, Mocuta, Cristian, Richard, Marie-Ingrid, Benoit, Daniel, Boivin, Philippe, Le-Friec, Yannick, Simola, Roberto, Thomas, Olivier

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Rapid Research Letters von Luong, Minh Anh, Wen, Dingfang, Rahier, Eloïse, Ramond, Nicolas Ratel, Pecassou, Béatrice, Yannick Le Friec, Benoit, Daniel, Claverie, Alain

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Impact of Nitrogen on the Crystallization and Microstructure of Ge‐Rich GeSbTe Alloys von Luong, Minh Anh, Wen, Dingfang, Rahier, Eloïse, Ratel Ramond, Nicolas, Pecassou, Béatrice, Le Friec, Yannick, Benoit, Daniel, Claverie, Alain

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