Automatic Particle Classification Through Deep Learning Approaches for Increasing Productivity in the Technical Cleanliness Laboratory von Zwinkau, Ronny, Frentrup, Simon, Möhle, Roman, Deuse, Jochen

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Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation von Ji, Yihong, Frentrup, Martin, Zhang, Xiaotian, Pongrácz, Jakub, Fairclough, Simon M., Liu, Yingjun, Zhu, Tongtong, Oliver, Rachel A.

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Multimicroscopy of cross-section zincblende GaN LED heterostructure von Ding, Boning, Frentrup, Martin, Fairclough, Simon M., Kusch, Gunnar, Kappers, Menno J., Wallis, David J., Oliver, Rachel A.

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Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopy von Xiu, Huixin, Fairclough, Simon M., Gundimeda, Abhiram, Kappers, Menno J., Wallis, David J., Oliver, Rachel A., Frentrup, Martin

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Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1−xN nucleation layers von Gundimeda, Abhiram, Frentrup, Martin, Fairclough, Simon M., Kappers, Menno J., Wallis, David J., Oliver, Rachel A.

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Microscopy studies of InGaN MQWs overgrown on porosified InGaN superlattice pseudo-substrates von Ji, Yihong, Frentrup, Martin, Fairclough, Simon M, Liu, Yingjun, Zhu, Tongtong, Oliver, Rachel A

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Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire von Feneberg, Martin, Winkler, Michael, Klamser, Juliane, Stellmach, Joachim, Frentrup, Martin, Ploch, Simon, Mehnke, Frank, Wernicke, Tim, Kneissl, Michael, Goldhahn, Rüdiger

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Crystal orientation of GaN layers on (1010) m-plane sapphire von Frentrup, Martin, Ploch, Simon, Pristovsek, Markus, Kneissl, Michael

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Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells von Church, Stephen, Christian, George, Barrett, Rachel, Hammersley, Simon, Kappers, Menno J, Frentrup, Martin, Oliver, Rachel A, Binks, David

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Indium incorporation efficiency and critical layer thickness of (202¯1) InGaN layers on GaN von Ploch, Simon, Wernicke, Tim, Frentrup, Martin, Pristovsek, Markus, Weyers, Markus, Kneissl, Michael

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Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength von Christian, George M., Schulz, Stefan, Hammersley, Simon, Kappers, Menno J., Frentrup, Martin, Humphreys, Colin J., Oliver, Rachel A., Dawson, Philip

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Growth and characterization of stacking fault reduced GaN on sapphire von Bläsing, Jürgen, Holý, Vaclav, Dadgar, Armin, Veit, Peter, Christen, Jürgen, Ploch, Simon, Frentrup, Martin, Wernicke, Tim, Kneissl, Michael, Krost, Alois

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FemtoSpeX: a versatile optical pump-soft X-ray probe facility with 100fs X-ray pulses of variable polarization von Holldack, Karsten, Bahrdt, Johannes, Balzer, Andreas, Bovensiepen, Uwe, Brzhezinskaya, Maria, Erko, Alexei, Eschenlohr, Andrea, Follath, Rolf, Firsov, Alexander, Frentrup, Winfried, Le Guyader, Loïc, Kachel, Torsten, Kuske, Peter, Mitzner, Rolf, Muller, Roland, Pontius, Niko, Quast, Torsten, Radu, Ilie, Schmidt, Jan-Simon, Schussler-Langeheine, Christian, Sperling, Mike, Stamm, Christian, Trabant, Christoph, Fohlisch, Alexander

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FemtoSpeX: a versatile optical pump-soft X-ray probe facility with 100 fs X-ray pulses of variable polarization von Holldack, Karsten, Bahrdt, Johannes, Balzer, Andreas, Bovensiepen, Uwe, Brzhezinskaya, Maria, Erko, Alexei, Eschenlohr, Andrea, Follath, Rolf, Firsov, Alexander, Frentrup, Winfried, Le Guyader, Loïc, Kachel, Torsten, Kuske, Peter, Mitzner, Rolf, Müller, Roland, Pontius, Niko, Quast, Torsten, Radu, Ilie, Schmidt, Jan-Simon, Schüßler-Langeheine, Christian, Sperling, Mike, Stamm, Christian, Trabant, Christoph, Föhlisch, Alexander

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Complications in silane-assisted GaN nanowire growth von Jiang, Nian, Ghosh, Saptarsi, Frentrup, Martin, Fairclough, Simon M, Loeto, Kagiso, Kusch, Gunnar, Oliver, Rachel A, Joyce, Hannah J

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Orientation control of GaN { 1 1 2 ¯ 2 } and { 1 0 1 ¯ 3 ¯ } grown on ( 1 0 1 ¯ 0 ) sapphire by metal-organic vapor phase epitaxy von Ploch, Simon, Frentrup, Martin, Wernicke, Tim, Pristovsek, Markus, Weyers, Markus, Kneissl, Michael

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Effect of stacking faults on the photoluminescence spectrum of zincblende GaN von Church, Stephen, Hammersley, Simon, Mitchell, Peter, Kappers, M. J, Lee, L. Y, Massabuau, Fabien, Sahonta, S.-L, Frentrup, M, Shaw, L. J, Wallis, D. J, Humphreys, C J, Oliver, A, Binks, David, Dawson, P

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Waveguide Optimization for Semipolar (In,Al,Ga)N Lasers von Rass, Jens, Ploch, Simon, Wernicke, Tim, Frentrup, Martin, Weyers, Markus, Kneissl, Michael

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Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs von Hammersley, Simon, Dawson, Phil, Kappers, Menno J., Massabuau, Fabien C.-P., Frentrup, Martin, Oliver, Rachel A., Humphreys, Colin J.

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Photoluminescence studies of cubic GaN epilayers von Church, Stephen, Hammersley, Simon, Mitchell, Peter, M. J. Kappers, Sahonta, S-L, Frentrup, Martin, Nilsson, D, Ward, J, Shaw, L. J, Wallis, David J, C. J. Humphreys, R. A. Oliver, Binks, David, Dawson, Philip

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