Stress relaxation of AlGaN on nonpolar m-plane GaN substrate von Lin, Yingying, Sena, Hadi, Frentrup, Martin, Pristovsek, Markus, Honda, Yoshio, Amano, Hiroshi

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Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM von Lee, Lok Yi, Frentrup, Martin, Vacek, Petr, Kappers, Menno J., Wallis, David J., Oliver, Rachel A.

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Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN von Lee, Lok Yi, Frentrup, Martin, Kappers, Menno J., Oliver, Rachel A., Humphreys, Colin J., Wallis, David J.

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Defect characterization of { 10 1 ¯ 3 } GaN by electron microscopy von Kusch, Gunnar, Frentrup, Martin, Hu, Nan, Amano, Hiroshi, Oliver, Rachel A., Pristovsek, Markus

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Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation von Ji, Yihong, Frentrup, Martin, Zhang, Xiaotian, Pongrácz, Jakub, Fairclough, Simon M., Liu, Yingjun, Zhu, Tongtong, Oliver, Rachel A.

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Multimicroscopy of cross-section zincblende GaN LED heterostructure von Ding, Boning, Frentrup, Martin, Fairclough, Simon M., Kusch, Gunnar, Kappers, Menno J., Wallis, David J., Oliver, Rachel A.

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Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopy von Xiu, Huixin, Fairclough, Simon M., Gundimeda, Abhiram, Kappers, Menno J., Wallis, David J., Oliver, Rachel A., Frentrup, Martin

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Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1−xN nucleation layers von Gundimeda, Abhiram, Frentrup, Martin, Fairclough, Simon M., Kappers, Menno J., Wallis, David J., Oliver, Rachel A.

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Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction von Frentrup, Martin, Hatui, Nirupam, Wernicke, Tim, Stellmach, Joachim, Bhattacharya, Arnab, Kneissl, Michael

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X-ray diffraction analysis of cubic zincblende III-nitrides von Frentrup, Martin, Lee, Lok Yi, Sahonta, Suman-Lata, Kappers, Menno J, Massabuau, Fabien, Gupta, Priti, Oliver, Rachel A, Humphreys, Colin J, Wallis, David J

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Defect structures in (001) zincblende GaN/3C-SiC nucleation layers von Vacek, Petr, Frentrup, Martin, Lee, Lok Yi, Massabuau, Fabien C.-P., Kappers, Menno J., Wallis, David J., Gröger, Roman, Oliver, Rachel A.

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Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire von Feneberg, Martin, Winkler, Michael, Klamser, Juliane, Stellmach, Joachim, Frentrup, Martin, Ploch, Simon, Mehnke, Frank, Wernicke, Tim, Kneissl, Michael, Goldhahn, Rüdiger

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Crystal orientation of GaN layers on (1010) m-plane sapphire von Frentrup, Martin, Ploch, Simon, Pristovsek, Markus, Kneissl, Michael

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Excitonic recombination in epitaxial lateral overgrown AlN on sapphire von Reich, Christoph, Feneberg, Martin, Kueller, Viola, Knauer, Arne, Wernicke, Tim, Schlegel, Jessica, Frentrup, Martin, Goldhahn, Rüdiger, Weyers, Markus, Kneissl, Michael

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Optimizing GaN (112‾2) hetero-epitaxial templates grown on (101‾0) sapphire von Pristovsek, Markus, Frentrup, Martin, Han, Yisong, Humphreys, Colin J.

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Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering von Barthel, Armin, Roberts, Joseph, Napari, Mari, Frentrup, Martin, Huq, Tahmida, Kovács, András, Oliver, Rachel, Chalker, Paul, Sajavaara, Timo, Massabuau, Fabien

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Facet analysis of truncated pyramid semi-polar GaN grown on Si(100) with rare-earth oxide interlayer von Grinys, Tomas, Dargis, Rytis, Frentrup, Martin, Jucevičienė, Agnė Kalpakovaitė, Badokas, Kazimieras, Stanionytė, Sandra, Clark, Andrew, Malinauskas, Tadas

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Indium incorporation efficiency and critical layer thickness of (202¯1) InGaN layers on GaN von Ploch, Simon, Wernicke, Tim, Frentrup, Martin, Pristovsek, Markus, Weyers, Markus, Kneissl, Michael

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Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors von Tang, Fengzai, Lee, Kean B., Guiney, Ivor, Frentrup, Martin, Barnard, Jonathan S., Divitini, Giorgio, Zaidi, Zaffar H., Martin, Tomas L., Bagot, Paul A., Moody, Michael P., Humphreys, Colin J., Houston, Peter A., Oliver, Rachel A., Wallis, David J.

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Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength von Christian, George M., Schulz, Stefan, Hammersley, Simon, Kappers, Menno J., Frentrup, Martin, Humphreys, Colin J., Oliver, Rachel A., Dawson, Philip

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