Computational technique for probing terminal control mechanisms inside three-dimensional nano-scale MOSFET von Mir, R.N, Frensley, W.R, Shichijo, S, Blakey, P.A

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Performance Analysis of Si Nanowire Biosensor by Numerical Modeling for Charge Sensing von Xinrong Yang, Frensley, W. R., Dian Zhou, Wenchuang Hu

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Realization of a three-terminal resonant tunneling device: the bipolar quantum resonant tunneling transistor von REED, M. A, FRENSLEY, W. R, MATYI, R. J, RANDALL, J. N, SEABAUGH, A. C

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Quantum transport calculation of the small-signal response of a resonant tunneling diode von FRENSLEY, W. R

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Ultrafast characteristics of InGaP-InGaAlP laser amplifiers von Tatum, J.A., MacFarlane, D.L., Bowen, R.C., Klimeck, G., Frensley, W.R.

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Low-dimensional resonant tunnelling and Coulomb blockade: a comparison of fabricated versus impurity confinement von Deshpande, M R, Hornbeck, E S, Kozodoy, P, Dekker, N H, Sleight, J W, Reed, M A, Fernando, C L, Frensley, W R

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Resonant transmission in the base/collector junction of a bipolar quantum-well resonant-tunneling transistor von Seabaugh, A. C., Kao, Y.-C., Frensley, W. R., Randall, J. N., Reed, M. A.

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Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode von Daniel, E.S., Cartoixa, X., Frensley, W.R., Ting, D.Z.-Y., McGill, T.C.

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Nanoprobe-induced electrostatic lateral quantization in near-surface resonant-tunneling heterostructures von Taylor, M. D., Wetsel, G. C., McBride, S. E., Brown, R. C., Frensley, W. R., Seabaugh, A. C., Kao, Y.-C., Beam, E. A.

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Transient response of a tunneling device obtained from the Wigner function von FRENSLEY, W. R

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Pseudomorphic bipolar quantum resonant-tunneling transistor von Seabaugh, A.C., Frensley, W.R., Randall, J.N., Reed, M.A., Farrington, D.L., Matyi, R.J.

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Boundary conditions for open quantum systems driven far from equilibrium von Frensley, William R.

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A Novel Approach to Modeling Metal-Insulator-Metal Capacitors Over Vias With Significant Electrical Length von Asahara, M., Campbell, C.F., Frensley, W.R.

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An In-Depth, Theoretical Investigation Into Modeling Metal-Insulator-Metal Capacitors Using Symmetric Coupled Lines in a Homogeneous Medium Model von Asahara, M., Campbell, C.F., Frensley, W.R.

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High-frequency effects of ballistic electron transport in semiconductors von Frensley, W.R.

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Electrochemical C-V profiling of heterojunction device structures von Seabaugh, A.C., Frensley, W.R., Matyi, R.J., Cabaniss, G.E.

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Tunneling spectroscopic study of finite superlattices von AGGARWAL, R. J, REED, M. A, FRENSLEY, W. R, KAO, Y.-C, LUSCOMBE, J. H

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Formation of rotation-induced superlattices and their observation by tunneling spectroscopy von SEABAUGH, A. C, KAO, Y.-C, LIU, H.-Y, LUSCOMBE, J. H, TSAI, H.-L, REED, M. A, FRENSLEY, W. R

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Wigner-function model of a resonant-tunneling semiconductor device von FRENSLEY, W. R

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Effect of inelastic processes on the self-consistent potential in the resonant-tunneling diode von Frensley, William R.

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