Relative importance of the Si–Si bond and Si–H bond for the stability of amorphous silicon thin film transistors von Wehrspohn, R. B., Deane, S. C., French, I. D., Gale, I., Hewett, J., Powell, M. J., Robertson, J.

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Stability of plasma deposited thin film transistors — comparison of amorphous and microcrystalline silicon von Wehrspohn, R.B., Deane, S.C., French, I.D., Powell, M.J.

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Dangling-bond defect state creation in microcrystalline silicon thin-film transistors von Wehrspohn, R. B., Powell, M. J., Deane, S. C., French, I. D., Roca i Cabarrocas, P.

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Effects of grain size and plasma-induced modification of the dielectric on the mobility and stability of bottom gate microcrystalline silicon TFTs von Kasouit, S., Roca i Cabarrocas, P., Vanderhaghen, R., Bonnassieux, Y., Elyaakoubi, M., French, I.D.

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Bias dependence of instability mechanisms in amorphous silicon thin-film transistors von POWELL, M. J, VAN BERKEL, C, FRENCH, I. D, NICHOLLS, D. H

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An amorphous silicon thin-film transistor with fully self-aligned top gate structure von Powell, M.J., Glasse, C., Green, P.W., French, I.D., Stemp, I.J.

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Urbach energy dependence of the stability in amorphous silicon thin-film transistors von Wehrspohn, R. B., Deane, S. C., French, I. D., Gale, I. G., Powell, M. J., Brüggemann, R.

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Quality factor in a-Si:H nip and pin diodes von VAN BERKEL, C, POWELL, M. J, FRANKLIN, A. R, FRENCH, I. D

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Plasma-enhanced chemical vapour deposition of amorphous silicon nitride for thin film diode active matrix liquid crystal displays von Oversluizen, G., Lodders, W.H.M., French, I.D.

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Influence of gas residence time on the deposition of nitrogen-rich amorphous silicon nitride von Murley, D.T., Gibson, R.A.G., Dunnett, B., Goodyear, A., French, I.D.

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Thermal bias annealing evidence for the defect pool in amorphous silicon thin-film transistors von DEANE, S. C, POWELL, M. J, HUGHES, J. R, FRENCH, I. D, MILNE, W. I

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The fabrication and characterization of EEPROM arrays on glass using a low-temperature poly-Si TFT process von Young, N.D., Harkin, G., Bunn, R.M., McCulloch, D.J., French, I.D.

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Effect of amorphous silicon material properties on the stability of thin film transistors: evidence for a local defect creation model von Wehrspohn, R.B., Deane, S.C., French, I.D., Powell, M.J.

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A defect-pool model for near-interface states in amorphous silicon thin-film transistors von Powell, M. J., Deane, S. C., French, I. D., Hughes, J. R., Milne, W. I.

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Control of stability and current-voltage characteristics in amorphous hydrogenated silicon nitride thin film diodes von McGarvey, B., Curran, J. E., Ford, R. A., French, I. D., Gale, I. G., Hewett, J., Sandoe, J. N.

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Evidence for the defect pool concept for Si dangling bond states in a-Si:H from experiments with thin film transistors von Powell, M.J., French, I.D., Hughes, J.R.

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The resolution of a-Si thin film transistor instability mechanisms von Powell, M.J., van Berkel, C., French, I.D.

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Effects of grain size and plasma-induced modification of the dielectric on the mobility and stability of bottom gate microcrystalline silicon TFTs von KASOUIT, S, ROCA I CABARROCAS, P, VANDERHAGHEN, R, BONNASSIEUX, Y, ELYAAKOUBI, M, FRENCH, I. D

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Two Techniques for Paper Chromatography von French, D. I, Gibson, M. R

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Electronic devices including micromechanical switches von I. D. FRENCH

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