Structural and optical properties of cubic GaN films on high-thermal conductivity substrates von Freitas, Jaime A., Culbertson, James C., Storm, David F., Mahadik, Nadeemullah A., Nepal, Neeraj, Anderson, Travis J.

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Properties of the state of the art of bulk III–V nitride substrates and homoepitaxial layers von Freitas, Jaime A

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Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques von Freitas, Jaime A., Culbertson, James C., Glaser, Evan R.

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Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition von Rafique, Subrina, Han, Lu, Tadjer, Marko J., Freitas, Jaime A., Mahadik, Nadeemullah A., Zhao, Hongping

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Epitaxial Growth of III--Nitride/Graphene Heterostructures for Electronic Devices von Nepal, Neeraj, Wheeler, Virginia D, Anderson, Travis J, Kub, Francis J, Mastro, Michael A, Myers-Ward, Rachael L, Qadri, Syed B, Freitas, Jaime A, Hernandez, Sandra C, Nyakiti, Luke O, Walton, Scott G, Gaskill, Kurt, Eddy, Charles R

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Efficient Incorporation of Mg in Solution Grown GaN Crystals von Freitas, Jaime A, Feigelson, Boris N, Anderson, Travis J

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Impurity-derived p-type conductivity in cubic boron arsenide von Lyons, John L., Varley, Joel B., Glaser, Evan R., Freitas, Jaime A., Culbertson, James C., Tian, Fei, Gamage, Geethal Amila, Sun, Haoran, Ziyaee, Hamidreza, Ren, Zhifeng

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Surface morphology and optical property of thermally annealed GaN substrates von Oh, Dong Keun, Bang, Sin Young, Choi, Bong Geun, Maneeratanasarn, P., Lee, Seong Kuk, Chung, Jin Hyun, Freitas, Jaime A., Shim, Kwang Bo

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Structural and electronic properties of Si- and Sn-doped (−201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres von Tadjer, Marko J, Freitas, Jaime A, Culbertson, James C, Weber, Marc H, Glaser, Evan R, Mock, Alyssa L, Mahadik, Nadeemullah A, Schmieder, Kenneth, Jackson, Eric, Gallagher, James C, Feigelson, Boris N, Kuramata, Akito

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Optical studies of bulk and homoepitaxial films of III–V nitride semiconductors von Freitas, Jaime A.

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Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility von Spencer, Joseph A., Tadjer, Marko J., Jacobs, Alan G., Mastro, Michael A., Lyons, John L., Freitas, Jaime A., Gallagher, James C., Thieu, Quang T., Sasaki, Kohei, Kuramata, Akito, Zhang, Yuhao, Anderson, Travis J., Hobart, Karl D.

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Multimillimeter-sized cubic boron arsenide grown by chemical vapor transport via a tellurium tetraiodide transport agent von Xing, Jie, Chen, Xi, Zhou, Yuanyuan, Culbertson, James. C., Freitas, Jaime A., Glaser, Evan R., Zhou, Jianshi, Shi, Li, Ni, Ni

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Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates von Tadjer, Marko J, Alema, Fikadu, Osinsky, Andrei, Mastro, Michael A, Nepal, Neeraj, Woodward, Jeffrey M, Myers-Ward, Rachael L, Glaser, Evan R, Freitas, Jaime A, Jacobs, Alan G, Gallagher, James C, Mock, Alyssa L, Pennachio, Daniel J, Hajzus, Jenifer, Ebrish, Mona, Anderson, Travis J, Hobart, Karl D, Hite, Jennifer K, Eddy Jr, Charles R

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Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN von Jacobs, Alan G., Feigelson, Boris N., Lundh, James S., Spencer, Joseph A., Freitas, Jaime A., Gunning, Brendan P., Kaplar, Robert J., Zhang, Yuhao, Tadjer, Marko J., Hobart, Karl D., Anderson, Travis J.

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Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition von Avila, Jason R, Qadri, Syed B, Freitas, Jaime A, Nepal, Neeraj, Boris, David R, Walton, Scott G, Eddy, Charles R, Wheeler, Virginia D

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High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen von Tadjer, Marko J., Koehler, Andrew D., Freitas, Jaime A., Gallagher, James C., Specht, Matty C., Glaser, Evan R., Hobart, Karl D., Anderson, Travis J., Kub, Fritz J., Thieu, Quang T., Sasaki, Kohei, Wakimoto, Daiki, Goto, Ken, Watanabe, Shinya, Kuramata, Akito

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Plasmonically enhanced emission from a group-III nitride nanowire emitter von Mastro, Michael A, Freitas Jr, Jaime A, Glembocki, Orest, Eddy Jr, Charles R, Holm, R T, Henry, Rich L, Caldwell, Josh, Rendell, Ronald W, Kub, Fritz, Kim, J

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Controlled synthesis of single-crystalline InN nanorods von Kryliouk, Olga, Park, Hyun Jong, Won, Yong Sun, Anderson, Tim, Davydov, Albert, Levin, Igor, Kim, Ji Hyun, Freitas Jr, Jaime A

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Gas-pressure chemical vapor transport growth of millimeter-sized c-BAs single crystals with moderate thermal conductivity von Xing, Jie, Glaser, Evan R., Song, Bai, Culbertson, James C., Freitas, Jaime A., Duncan, Ryan A., Nelson, Keith A., Chen, Gang, Ni, Ni

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Residual impurities in GaN substrates and epitaxial layers grown by various techniques von Murthy, Madhu, Freitas, Jaime A., Kim, Jihyun, Glaser, Evan R., Storm, David

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