Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz von Lischke, S., Peczek, A., Morgan, J. S., Sun, K., Steckler, D., Yamamoto, Y., Korndörfer, F., Mai, C., Marschmeyer, S., Fraschke, M., Krüger, A., Beling, A., Zimmermann, L.

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Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene von Lukose, R., Lisker, M., Akhtar, F., Fraschke, M., Grabolla, T., Mai, A., Lukosius, M.

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Author Correction: Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene von Lukose, R., Lisker, M., Akhtar, F., Fraschke, M., Grabolla, T., Mai, A., Lukosius, M.

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Influence of Process Parameters on Surface Activated Aluminum-to-Aluminum Wafer Bonding von Schulze, Sebastian, Vob, T., Kruger, P., Fraschke, M., Kulse, P., Wietstruck, Matthias

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High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics von Lukosius, M., Walczyk, Ch, Fraschke, M., Wolansky, D., Richter, H., Wenger, Ch

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Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells von WALCZYK, D, WALCZYK, Ch, SCHROEDER, T, BERTAUD, T, SOWINSKA, M, LUKOSIUS, M, FRASCHKE, M, TILLACK, B, WENGER, Ch

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Processing and integration of graphene in a 200 mm wafer Si technology environment von Lisker, M., Lukosius, M., Fraschke, M., Kitzmann, J., Dabrowski, J., Fursenko, O., Kulse, P., Schulz, K., Krüger, A., Drews, J., Schulze, S., Wolansky, D., Schubert, A.M., Katzer, J., Stolarek, D., Costina, I., Wolff, A., Dziallas, G., Coccetti, F., Mai, A.

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Crosstalk suppression of CMOS compatible AlN based SAW devices on low resistive Si(100) von Kaletta, Udo Ch, Wolansky, D., Wipf, M. Fraschke Ch, Wenger, Ch

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Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance von Niu, Gang, Calka, Pauline, Auf der Maur, Matthias, Santoni, Francesco, Guha, Subhajit, Fraschke, Mirko, Hamoumou, Philippe, Gautier, Brice, Perez, Eduardo, Walczyk, Christian, Wenger, Christian, Di Carlo, Aldo, Alff, Lambert, Schroeder, Thomas

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Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene (vol 11, 13111, 2021) von Lukose, R., Lisker, M., Akhtar, F., Fraschke, M., Grabolla, T., Mai, A., Lukosius, M.

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Publisher Correction: Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz von Lischke, S., Peczek, A., Morgan, J. S., Sun, K., Steckler, D., Yamamoto, Y., Korndörfer, F., Mai, C., Marschmeyer, S., Fraschke, M., Krüger, A., Beling, A., Zimmermann, L.

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Gigahertz monolithic delay lines for surface acoustic waves on Silicon von Santos, P V, Rauwerdink, S, Biermann, K, Drescher, B, Seidel, W, Kaynak, M, Kaletta, U, Fraschke, M, Wolansky, D, Wenger, Ch

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(Invited) Optimized HfO2-Based MIM Module Fabrication for Emerging Memory Applications von Mahadevaiah, Mamathamba Kalishettyhalli, Lisker, Marco, Fraschke, Mirko, Marschmeyer, Steffen, Schmidt, Detlef, Wenger, Christian, Perez, Eduardo, Mai, Andreas

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On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration von Walczyk, Ch, Wenger, Ch, Walczyk, D., Lukosius, M., Costina, I., Fraschke, M., Dabrowski, J., Fox, A., Wolansky, D., Thiess, S., Miranda, E., Tillack, B., Schroeder, T.

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(Invited) Si1-xGex/Si MQW Based Uncooled Microbolometer Development and Integration into 130 nm BiCMOS Technology von Baristiran Kaynak, Canan, Yamamoto, Yuji, Göritz, Alexander, Korndoerfer, Falk, Zaumseil, Peter, Kulse, Philipp, Schulz, Katrin, Fraschke, Mirko, Marschmeyer, Steffen, Wolansky, Dirk, Wietstruck, Matthias, Shafique, Atia, Gurbuz, Yasar, Kaynak, Mehmet

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Impact of Temperature on the Resistive Switching Behavior of Embedded \hbox-Based RRAM Devices von Walczyk, C., Walczyk, D., Schroeder, T., Bertaud, T., Sowinska, M., Lukosius, M., Fraschke, M., Wolansky, D., Tillack, B., Miranda, E., Wenger, C.

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(Invited) Combining SiGe BiCMOS and InP Processing in an on-top of Chip Integration Approach von Lisker, Marco, Trusch, Andreas, Krüger, Andreas, Fraschke, Mirko, Kulse, Philipp, Marschmeyer, Steffen, Schmidt, Jens, Meliani, Chafik, Tillack, Bernd, Weimann, Nils, Kraemer, Tomas, Ostermay, Ina, Krüger, Olaf, Jensen, Thomas, Al-Sawaf, Thualfiqar, Krozer, Viktor, Heinrich, Wolfgang

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High performance metal–insulator–metal capacitors with atomic vapor deposited HfO 2 dielectrics von Lukosius, M., Walczyk, Ch, Fraschke, M., Wolansky, D., Richter, H., Wenger, Ch

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High performance metal-insulator-metal capacitors with atomic vapor deposited Hf02 dielectrics von LUKOSIUS, M, WALCZYK, Ch, FRASCHKE, M, WOLANSKY, D, RICHTER, H, WENGER, Ch

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InP-Si BiCMOS Heterointegration Using a Substrate Transfer Process von Lisker, Marco, Trusch, Andreas, Krüger, Andreas, Fraschke, Mirko, Kulse, Philipp, Borokhovych, Yevgen, Tillack, Bernd, Ostermay, Ina, Krämer, Tomas, Thies, Andreas, Krüger, Olaf, Schmückle, Franz-Josef, Krozer, Viktor, Heinrich, Wolfgang

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